US4863557A
Expired / Lapsed
US
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Pattern forming process and thin-film magnetic head formed by said process
Assignee: Individual
•
Filing: 1988-05-25
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Granted: 1989-09-05
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Expires: 2008-05-25
Abstract
Abstract Disclosed herein are a pattern forming process, particularly the one by lithography for fine fabrication, and a thin-film magnetic head formed by said process. The present invention provides a process for accurately fabricating a substrate having a stepped surface by dry etching, using as the mask a resist film formed by plasma polymerization. Plasma polymerization forms a uniform photosensitive resist film on a stepped surface, and the resist film can be used as the mask for the ion milling of the substrate.
Inventors
- 👤 Yuuichi Kokaku
- 👤 Makoto Kitou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:39
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/31; G11B5/3163; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0755; G03F7/09; G03F7/094; G03F7/16; G03F7/167; G03F7/26; G03F7/36; Y; Y10; Y10T; Y10T428/00; Y10T428/11; Y10T428/1157
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
46 words
A pattern forming process which comprises forming a resist film on a substrate having a stepped surface by plasma polymerization, patterning said resist film, and removing that part of the substrate which is not covered with said resist film, thereby forming a pattern on said substrate.
Claim 2
Dependent Claim
46 words
A pattern forming process which comprises forming a resist film on a substrate having a stepped surface by plasma polymerization, patterning said resist film, and removing that part of the substrate which is not covered with said resist film, thereby forming a pattern on said substrate.
Claim 3
Dependent Claim
20 words
A pattern forming process as claimed in claim 1, wherein the removing of the substrate is performed by dry etching.
Claim 4
Dependent Claim
31 words
A pattern forming process as claimed in claim 2, wherein the plasma polymerization is performed by using as the raw material gas a monomer capable of forming a photosensitive polymer compound.
Claim 5
Dependent Claim
45 words
A pattern forming process as claimed in claim 2, wherein the plasma polymerization is performed by using as the raw material gas a mixture of a monomer capable of forming a photosensitive polymer compound and an inert gas or a vapor of an organic compound.
Claim 6
Dependent Claim
27 words
A pattern forming process as claimed in claim 1, wherein the stepped surface has a difference in level in the range of 5 μm to 30 μm.
Claim 7
Dependent Claim
68 words
A pattern forming process which comprises forming a first resist film on a substrate having a stepped surface, forming a second resist film on said first resist film by plasma polymerization, patterning said second resist film, patterning said first resist film using said patterned second resist film as a mask, and removing that part of the substrate which is not covered with said first and second resist films.
Claim 8
Dependent Claim
68 words
A pattern forming process which comprises forming a first resist film on a substrate having a stepped surface, forming a second resist film on said first resist film by plasma polymerization, patterning said second resist film, patterning said first resist film using said patterned second resist film as a mask, and removing that part of the substrate which is not covered with said first and second resist films.
Claim 9
Dependent Claim
23 words
A pattern forming process as claimed in claim 6, wherein the first resist film is one which can be removed by oxygen plasma.
Claim 10
Dependent Claim
24 words
A pattern forming process as claimed in claim 6, wherein the second resist film is one which is photosensitive and resistant to oxygen plasma.
Claim 11
Dependent Claim
36 words
A pattern forming process as claimed in claim 6, wherein the second resist film is one which contains silicon and can form a resist pattern upon exposure to electromagnetic wave or corpuscular rays, followed by development.
Claim 12
Dependent Claim
19 words
A pattern forming process as claimed in claim 6, wherein the first resist film is formed by plasma polymerization.
Claim 13
Dependent Claim
20 words
A pattern forming process as claimed in claim 10, wherein the first resist film is one which contains carbon atoms.
Claim 14
Dependent Claim
36 words
A pattern forming process as claimed in claim 6, wherein the first resist film is one which is formed by plasma-assisted chemical vapor deposition method, chemical vapor deposition method, sputtering method, or ion beam deposition method.
Claim 15
Dependent Claim
21 words
A pattern forming process as claimed in claim 12, wherein the first resist film is one which is made of carbon.
Claim 16
Dependent Claim
23 words
A pattern forming process as claimed in claim 6, wherein the first resist film is used as an insulation layer or protective film.
Claim 17
Dependent Claim
90 words
An improved process for producing a thin-film magnetic head including the steps of forming a first magnetic layer, a gap layer of non-magnetic material, a coil, and a second magnetic layer on a non-magnetic substrate by thin-film technology, wherein said improvement comprises forming a resist film on said second magnetic layer by plasma polymerization, patterning said resist film, and removing the part of the second magnetic film which is not covered with the resist film, thereby fabricating the second magnetic layer which determines the track width for recording and reading.
Claim 18
Dependent Claim
90 words
An improved process for producing a thin-film magnetic head including the steps of forming a first magnetic layer, a gap layer of non-magnetic material, a coil, and a second magnetic layer on a non-magnetic substrate by thin-film technology, wherein said improvement comprises forming a resist film on said second magnetic layer by plasma polymerization, patterning said resist film, and removing the part of the second magnetic film which is not covered with the resist film, thereby fabricating the second magnetic layer which determines the track width for recording and reading.
Claim 19
Dependent Claim
31 words
A pattern forming process as claimed in claim 1, wherein the plasma polymerization is performed by using as the raw material gas a monomer capable of forming a photosensitive polymer compound.
Claim 20
Dependent Claim
113 words
An improved process for producing a thin-film magnetic head including the steps of forming a first magnetic layer, a gap layer of non-magnetic material, a coil, and a second magnetic layer on a non-magnetic substrate by thin-film technology, wherein said improvement comprises forming a first resist film on said second magnetic layer, forming a second resist film on said first resist film by plasma polymerization, patterning said second resist film, patterning said first resist film using said second resist film as a mask, and removing the part which is not covered with said first and second resist films, thereby fabricating the second magnetic layer which determines the track width for recording and reading.
Claim 21
Dependent Claim
113 words
An improved process for producing a thin-film magnetic head including the steps of forming a first magnetic layer, a gap layer of non-magnetic material, a coil, and a second magnetic layer on a non-magnetic substrate by thin-film technology, wherein said improvement comprises forming a first resist film on said second magnetic layer, forming a second resist film on said first resist film by plasma polymerization, patterning said second resist film, patterning said first resist film using said second resist film as a mask, and removing the part which is not covered with said first and second resist films, thereby fabricating the second magnetic layer which determines the track width for recording and reading.
Claim 22
Dependent Claim
44 words
A pattern forming process as claimed in claim 1, wherein the plasma polymerization is performed by using as the raw material gas a mixture of a monomer capable of forming a photosensitive polymer compound and an inert gas or vapor of an organic compound.
Claim 23
Dependent Claim
20 words
A pattern forming process as claimed in claim 12, wherein the first resist film is one which contains carbon atoms.
Claim 24
Dependent Claim
84 words
A thin-film magnetic head comprising a first magnetic layer on a non-magnetic substrate, a gap layer of non-magnetic material, a coil, a second magnetic layer, and a protective layer on said second magnetic layer wherein said protective layer is used as a resist film, being formed by plasma polymerization, being patterned, and a part of the second magnetic layer which is not covered with said resist film, is removed thereby fabricating the second magnetic layer which determines the track width for recording and reading.
Claim 25
Dependent Claim
84 words
A thin-film magnetic head comprising a first magnetic layer on a non-magnetic substrate, a gap layer of non-magnetic material, a coil, a second magnetic layer, and a protective layer on said second magnetic layer wherein said protective layer is used as a resist film, being formed by plasma polymerization, being patterned, and a part of the second magnetic layer which is not covered with said resist film, is removed thereby fabricating the second magnetic layer which determines the track width for recording and reading.
Claim 26
Dependent Claim
102 words
A thin-film magnetic head comprising a first magnetic layer on a non-magnetic substrate, a gap layer of non-magnetic material, a coil, a second magnetic layer, and a protective layer on said second magnetic layer, wherein said protective layer is used as a first resist film, being patterned by using a second resist film formed on said first resist film by plasma polymerization as a mask, and said a part of the second magnetic layer which is not covered with said first and second resist film is removed, thereby fabricating the second magnetic layer which determines the track width for recording and reading.
Claim 27
Dependent Claim
102 words
A thin-film magnetic head comprising a first magnetic layer on a non-magnetic substrate, a gap layer of non-magnetic material, a coil, a second magnetic layer, and a protective layer on said second magnetic layer, wherein said protective layer is used as a first resist film, being patterned by using a second resist film formed on said first resist film by plasma polymerization as a mask, and said a part of the second magnetic layer which is not covered with said first and second resist film is removed, thereby fabricating the second magnetic layer which determines the track width for recording and reading.
Claim 28
Dependent Claim
22 words
A thin-film magnetic head as claimed in claim 21, wherein said first resist film is one which is formed by plasma polymerization.
Claim 29
Dependent Claim
21 words
A thin-film magnetic head as claimed in claim 21, wherein said first resist film is one which is made of carbon.
Claim 30
Dependent Claim
32 words
A thin-film magnetic head as claimed in claim 23, wherein said first resist film is one which is formed by plasma-assisted chemical vapor deposition method, sputtering method, or ion beam deposition method.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-04 | 1993-03-06 | 1993-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-04 | 1997-03-06 | 1997-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-04 | 2001-03-06 | 2001-09-05 | $7700.00 | Window Closed / Lapsed |