US4950498A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for repairing pattern film
Assignee: Hitachi High-Tech Analysis Corp
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Filing: 1987-02-27
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Granted: 1990-08-21
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Expires: 2007-02-27
Abstract
Abstract This invention is concerned with the method and apparatus for forming a pattern on a substrate. More specifically, it is intended to remove the fringe of the film thinly attached at the sides of the film formed at the time of forming by CVD method and thereby to make a film of high quality. In this invention, by adding the method and means of selectively removing the fringe of the film to the method and device of forming a pattern film on the principle of so-called ion beam CVD method, the method and apparatus of forming a pattern film for making a mask or IC of high quality can be obtained without a problem of the fringe of the film at the sides of the pattern.
Inventors
- 👤 Takashi Kaito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 19:38
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/72; G03F1/74; H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3178
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
118 words
A process for repairing a white-spot defect in the surface of a photomask, comprising the steps of: providing a patterned photomask having a patterned film on the surface thereof and having a white-spot defect on the surface thereof to be repaired; directing a vapor stream of depositable organic compound onto the photomask surface in the region of the white-spot defect while irradiating the region with a focused ion beam to thereby form a deposited film on the photomask surface, the deposited film having a relatively thicker film portion overlying the white-spot defect and a relatively thinner film fringe portion at the fringe of the thicker film portion; and selectively removing the film fringe portion by reactive plasma etching.
Claim 2
Dependent Claim
118 words
A process for repairing a white-spot defect in the surface of a photomask, comprising the steps of: providing a patterned photomask having a patterned film on the surface thereof and having a white-spot defect on the surface thereof to be repaired; directing a vapor stream of depositable organic compound onto the photomask surface in the region of the white-spot defect while irradiating the region with a focused ion beam to thereby form a deposited film on the photomask surface, the deposited film having a relatively thicker film portion overlying the white-spot defect and a relatively thinner film fringe portion at the fringe of the thicker film portion; and selectively removing the film fringe portion by reactive plasma etching.
Claim 3
Dependent Claim
23 words
A process according to claim 1; wherein the step of selectively removing comprises selectively removing the film fringe portion by oxygen plasma etching.
Claim 4
Dependent Claim
23 words
A process according to claim 1; wherein the relatively thinner film fringe portion has a thickness on the order of several tens Å.
Claim 5
Dependent Claim
36 words
A process according to claim 1; wherein the deposited film is formed on the photomask surface in a first chamber; and the film fringe portion is removed from the thicker film portion in a second chamber.
Claim 6
Dependent Claim
122 words
A process for altering an electrically conductive pattern on the surface of a substrate, comprising the steps of: providing a patterned substrate having an electrically conductive pattern on the surface thereof to be altered; directing a vapor stream of depositable electrically conductive material onto the substrate surface in the region where the pattern is to be altered while irradiating the region with a focused ion beam to thereby form a deposited film on the substrate surface, the deposited film having a relatively thicker film portion overlying the substrate surface where the pattern is to be altered and a relatively thinner film fringe portion at the fringe of the thicker film portion; and selectively removing the film fringe portion by reactive plasma etching.
Claim 7
Dependent Claim
122 words
A process for altering an electrically conductive pattern on the surface of a substrate, comprising the steps of: providing a patterned substrate having an electrically conductive pattern on the surface thereof to be altered; directing a vapor stream of depositable electrically conductive material onto the substrate surface in the region where the pattern is to be altered while irradiating the region with a focused ion beam to thereby form a deposited film on the substrate surface, the deposited film having a relatively thicker film portion overlying the substrate surface where the pattern is to be altered and a relatively thinner film fringe portion at the fringe of the thicker film portion; and selectively removing the film fringe portion by reactive plasma etching.
Claim 8
Dependent Claim
23 words
A process according to claim 5; wherein the step of selectively removing comprises selectively removing the film fringe portion by oxygen plasma etching.
Claim 9
Dependent Claim
23 words
A process according to claim 5; wherein the relatively thinner film fringe portion has a thickness on the order of several tens Å.
Claim 10
Dependent Claim
36 words
A process according to claim 5, wherein the deposited film is formed on the photomask surface in a first chamber; and the film fringe portion is removed from the thicker film portion in a second chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-20 | 1994-02-19 | 1994-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-20 | 1998-02-19 | 1998-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-20 | 2002-02-19 | 2002-08-21 | $7700.00 | Window Closed / Lapsed |