Patent US5254480A successfully refreshed from Google Patents.
US5254480A
Expired / Lapsed
US
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Process for producing a large area solid state radiation detector
Assignee: GlassBridge Enterprises Inc
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Filing: 1992-02-20
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Granted: 1993-10-19
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Expires: 2012-02-20
Abstract
Abstract A process for producing an array of solid state radiation detectors includes depositing on a substrate one or more layers of silicon-based materials and then depositing a metal layer overlying silicon-based substance. The metal layer is formed into an array of metal layer regions, and then the metal layer is used as a mask to remove exposed adjacent silicon-based substance layers thereby forming an array of silicon-based substance layers that are aligned with the array of metal layers for forming an array of photosensitive sensing devices. The process of the present invention reduces the number of microlithography steps that are used in forming an array of layered amorphous silicon photosensitive devices.
Inventors
- 👤 Nang T. Tran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:27
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D86/00; H10F; H10F39/00; H10F39/011; H10F39/016; H10F39/10; H10F39/12; H10F39/18; H10F39/189; H10F39/1898; H10F39/80; H10F39/804; Y; Y10; Y10S; Y10S148/00; Y10S148/15; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
115 words
A process for producing a large area radiation detector, the process comprising: forming submodules, each submodule including an array of thin film transistors; positioning the submodules in side-by-side relationship; forming a bottom electrode layer that overlies the thin film transistor arrays of the submodule; depositing on the bottom electrode layer doped and undoped amorphous silicon layers; forming a top electrode layer on the amorphous silicon layers; using microlithography to form an array of top electrode regions overlying the thin film transistors of the submodules; selectively etching the doped and undoped amorphous silicon layers using the array of top electrode regions as a mask to form an array of photosensitive devices overlying the thin film transistors
Claim 2
Dependent Claim
115 words
A process for producing a large area radiation detector, the process comprising: forming submodules, each submodule including an array of thin film transistors; positioning the submodules in side-by-side relationship; forming a bottom electrode layer that overlies the thin film transistor arrays of the submodule; depositing on the bottom electrode layer doped and undoped amorphous silicon layers; forming a top electrode layer on the amorphous silicon layers; using microlithography to form an array of top electrode regions overlying the thin film transistors of the submodules; selectively etching the doped and undoped amorphous silicon layers using the array of top electrode regions as a mask to form an array of photosensitive devices overlying the thin film transistors
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein the photosensitive device is a photodiode.
Claim 4
Dependent Claim
27 words
The process of claim 1 wherein the doped amorphous silicon layer includes a p 30 -type amorphous silicon layer and an n 30 -type amorphous silicon layer.
Claim 5
Dependent Claim
14 words
The process of claim 1 wherein the top electrode layer is made of platinum.
Claim 6
Dependent Claim
24 words
The process of claim 1 and further including forming an x-ray sensitive phosphor layer in light receiving association with the array of photosensitive devices.
Claim 7
Dependent Claim
86 words
A process for producing a large area radiation detector, the process comprising: forming submodules, each submodule including an array of thin film transistors; positioning the submodules in side-by-side relationship; forming a bottom electrode layer that overlies the thin film transistor arrays of the submodules, and patterning the electrode layer using microlithography to form an array of electrodes overlying the array of transistors; depositing a continuous layer of photoconductor on the bottom electrode layer; and forming a top common electrode layer on the continuous layer of photoconductor.
Claim 8
Dependent Claim
86 words
A process for producing a large area radiation detector, the process comprising: forming submodules, each submodule including an array of thin film transistors; positioning the submodules in side-by-side relationship; forming a bottom electrode layer that overlies the thin film transistor arrays of the submodules, and patterning the electrode layer using microlithography to form an array of electrodes overlying the array of transistors; depositing a continuous layer of photoconductor on the bottom electrode layer; and forming a top common electrode layer on the continuous layer of photoconductor.
Claim 9
Dependent Claim
15 words
The process of claim 6 wherein the top common electrode layer is made of platinum.
Claim 10
Dependent Claim
24 words
The process of claim 6 and further including forming an x-ray sensitive phosphor layer in light receiving association with the top common electrode layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-18 | 1997-04-19 | 1997-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-18 | 2001-04-19 | 2001-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-18 | 2005-04-19 | 2005-10-19 | $7700.00 | Window Closed / Lapsed |