Method of manufacturing a static induction type switching device

Claim 1

A method of manufacturing a static induction type switching device comprising the steps of: (a) preparing a first conductivity type semiconductor substrate having top and bottom major surfaces; (b) forming a first conductivity type region on said top major surface of said semiconductor substrate; (c) selectively removing said first conductivity type region and said semiconductor substrate to thereby define first trenches which are arrayed substantially in parallel with said top major surface; (d) forming polysilicon regions containing second conductivity type impurities in bottom portions of said first trenches by providing material substantially made of polysilicon having second conductivity impurities into each of said first trenches, and removing a top portion of said material from each of said first trenches to thereby obtain said polysilicon regions and from each of said first trenches, removing said top portion of said material together with respective parts of said semiconductor substrate and said first conductivity type region which surrounds said top portion of said material, to thereby define second trenches with which respective entrance side portions of said first trenches are replaced, respectively, wherein an aperture size of each of second trenches larger than an aperture size of each first trench; (e) diffusing said second conductivity type impurities from said polysilicon layers serving as diffusion sources to thereby form diffused regions on peripheries of said polysilicon regions, said diffused regions serving as gate regions with said polysilicon regions; and (f) forming a first or second conductivity type second main electrode region on said bottom major surface of said semiconductor substrate.

Claim 2

A method of manufacturing a static induction type switching device comprising the steps of: (a) preparing a first conductivity type semiconductor substrate having top and bottom major surfaces; (b) forming a first conductivity type region on said top major surface of said semiconductor substrate; (c) selectively removing said first conductivity type region and said semiconductor substrate to thereby define first trenches which are arrayed substantially in parallel with said top major surface; (d) forming polysilicon regions containing second conductivity type impurities in bottom portions of said first trenches by providing material substantially made of polysilicon having second conductivity impurities into each of said first trenches, and removing a top portion of said material from each of said first trenches to thereby obtain said polysilicon regions and from each of said first trenches, removing said top portion of said material together with respective parts of said semiconductor substrate and said first conductivity type region which surrounds said top portion of said material, to thereby define second trenches with which respective entrance side portions of said first trenches are replaced, respectively, wherein an aperture size of each of second trenches larger than an aperture size of each first trench; (e) diffusing said second conductivity type impurities from said polysilicon layers serving as diffusion sources to thereby form diffused regions on peripheries of said polysilicon regions, said diffused regions serving as gate regions with said polysilicon regions; and (f) forming a first or second conductivity type second main electrode region on said bottom major surface of said semiconductor substrate.

Claim 3

A method of manufacturing a static induction type switching device comprising the steps of: (a) preparing a first conductivity type semiconductor substrate having top and bottom major surfaces; (b) forming a first conductivity type region on said top major surface of said semiconductor substrate; (c) selectively removing said first conductivity type region and said semiconductor substrate to thereby define first trenches which are arrayed substantially in parallel with said top major surface; (d) forming polysilicon regions containing second conductivity type impurities in bottom portions of said first trenches by providing material substantially made of polysilicon having second conductivity impurities into each of said first trenches, and removing a top portion of said material from each of said first trenches to thereby obtain said polysilicon regions and from each of said first trenches, removing said top portion of said material together with respective parts of said semiconductor substrate and said first conductivity type region which surrounds said top portion of said material, to thereby define second trenches with which respective entrance side portions of said first trenches are replaced, respectively, wherein an aperture size of each of second trenches larger than an aperture size of each first trench; (e) diffusing said second conductivity type impurities from said polysilicon layers serving as diffusion sources to thereby form diffused regions on peripheries of said polysilicon regions, said diffused regions serving as gate regions with said polysilicon regions; (f) forming a first or second conductivity type second main electrode region on said bottom major surface of said semiconductor substrate; and (g) providing an insulator into each of said second trenches. trench.

Claim 4

A method of manufacturing a static induction type switching device comprising the steps of: (a) preparing a first conductivity type semiconductor substrate having top and bottom major surfaces; (b) forming a first conductivity type region on said top major surface of said semiconductor substrate; (c) selectively removing said first conductivity type region and said semiconductor substrate to thereby define first trenches which are arrayed substantially in parallel with said top major surface; (d) forming polysilicon regions containing second conductivity type impurities in bottom portions of said first trenches by providing material substantially made of polysilicon having second conductivity impurities into each of said first trenches, and removing a top portion of said material from each of said first trenches to thereby obtain said polysilicon regions and from each of said first trenches, removing said top portion of said material together with respective parts of said semiconductor substrate and said first conductivity type region which surrounds said top portion of said material, to thereby define second trenches with which respective entrance side portions of said first trenches are replaced, respectively, wherein an aperture size of each of second trenches larger than an aperture size of each first trench; (e) diffusing said second conductivity type impurities from said polysilicon layers serving as diffusion sources to thereby form diffused regions on peripheries of said polysilicon regions, said diffused regions serving as gate regions with said polysilicon regions; (f) forming a first or second conductivity type second main electrode region on said bottom major surface of said semiconductor substrate; and (g) providing an insulator into each of said second trenches. trench.