Patent US5093276A successfully refreshed from Google Patents.
US5093276A
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Semiconductor device and method of production
Assignee: Seiko Epson Corp
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Filing: 1991-05-13
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Granted: 1992-03-03
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Expires: 2011-05-13
Abstract
Abstract A novel semiconductor device and method of production of such a device are provided. Both the N and P channels of the novel semiconductor device are formed by contact self-alignment, thereby permitting high speed operation and high density integration to be realized. The formation of the channels by contact self-alignment is accomplished by depositing a P type polysilicon layer on an N well region and an N type polysilicon layer on a P well region. A silicide layer is formed over both the P and N type polysilicon layers to form a polycide.
Inventors
- 👤 Michio Asahina
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:43
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0174; H10D84/0186; H10D84/0188; H10D84/02; H10D84/03; H10D84/038; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
136 words
A method for making a semiconductor device comprising: forming a non-doped polysilicon gate on a gate insulating film on a substrate having a P well region on an N well region; injecting low concentration ions into the P and N well regions using the non-doped polysilicon gate as a mask; forming silicon dioxide sidewalls on both sides of the polysilicon gate; depositing a refractory metal film on the surface; thermally activating the refractory metal film to form a silicide film; etching the unactivated refractory metal film to form polysilicon gates and source-drain regions; injecting high concentration ions into the P and N channel regions; depositing a phosphoric silicate glass on the surface and lamp annealing the structure; etching the phosphoric silicate glass to form a contact hole; and forming a conductive connector in the contact hole.
Claim 2
Independent Claim
136 words
A method for making a semiconductor device comprising: forming a non-doped polysilicon gate on a gate insulating film on a substrate having a P well region on an N well region; injecting low concentration ions into the P and N well regions using the non-doped polysilicon gate as a mask; forming silicon dioxide sidewalls on both sides of the polysilicon gate; depositing a refractory metal film on the surface; thermally activating the refractory metal film to form a silicide film; etching the unactivated refractory metal film to form polysilicon gates and source-drain regions; injecting high concentration ions into the P and N channel regions; depositing a phosphoric silicate glass on the surface and lamp annealing the structure; etching the phosphoric silicate glass to form a contact hole; and forming a conductive connector in the contact hole.
Claim 3
Dependent Claim
33 words
The method of claim 1, wherein the metal silicide film is selected from the group consisting of molybdenum disilicon (MoSi 2 ), tungsten disilicon (WSi 2 ) and titanium disilicon (TiSi 2 ).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-03 | 1995-09-02 | 1996-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-03 | 1999-09-02 | 2000-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-03 | 2003-09-02 | 2004-03-03 | $7700.00 | Window Closed / Lapsed |