Method of fabricating mos semiconductor device

Abstract

Abstract PURPOSE: To lead out a source electrode from a semiconductor substrate by forming source and drain regions in the substrate, coating a reaction preventive film on the entire surface thereof, perforating an opening only in the source region, coating an aluminum film thereon, and producing alloy communicating with the substrate in the source region. CONSTITUTION: A p-type layer 11 is epitaxially grown on a p + -type semiconductor substrate 10, thick isolation SiO 2 layers 12 are formed at both ends thereof, and gate oxide film and gate polycrystalline silicon electrode 13 are formed on the substrate 10 surrounded by the layer 12. Then, a PSG layer 14 is coated on the entire surface containing the source and drain forming regions exposed at both sides, and heat treated to thereby form n + -type source and drain regions 15 and 16. Then, an electrode contacting opening is perforated only on the region 15, an n-type polycrystalline silicon layer 17 becoming a reaction preventive film is accumulated on the entire surface thereof, the portion over the contacting opening is removed, and an aluminum layer 18 is coated on the entire surface thereof to make contact with the region 15 through the opening. Then, it is heat treated to thereby occur an alloying reaction on the bonded surface of the region 15 to thus directly connect it to the layer 11 and to lead out the source electrode from the back surface of the substrate 10. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Hitoshi Takahashi
• 👤 Katsumi Nishimura
• 👤 Tsuyoshi Yamamoto

Bibliographic Details