US4432132A
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US
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Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
Assignee: AT&T Inc
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Filing: 1981-12-07
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Granted: 1984-02-21
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Expires: 2001-12-07
Abstract
Abstract This invention involves the defining of a submicron feature (21 or 93) in a structure, typically an insulated gate field effect transistor structure (30, 40, or 110). This feature is defined by a sidewall oxide protective masking layer (21 or 71) formed by reactive oxygen ion etching of the structure being built at a time when an exposed surface thereof in the vicinity of the sidewall contains atoms of a material--for example, silicon or aluminum--which combine with the oxygen ions to form the sidewall oxide layer.
Inventors
- 👤 Eliezer Kinsbron
- 👤 William T. Lynch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:42
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/027; H10D30/0277; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10D64/01328; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
151 words
A method for fabricating a semiconductor structure comprising the steps of forming, overlying a horizontal surface in a structure, a patterned layer having a vertical sidewall at the bottom of which is located an exposed surface of a first layer of first material, said first material containing atoms of a first kind, and forming on the vertical sidewall a masking layer of predetermined submicron horizontal thickness dimension, and using the masking layer to define a feature of the structure underlying the masking layer, the masking layer being formed by bombarding said horizontal surface portion with oxygen for a predetermined time to react with atoms of said first material, located at the exposed surface of the first layer, whereby the masking layer, comprising a chemical compound of oxygen and said atoms, is deposited on the vertical sidewall to the predetermined submicron thickness, and whereby the thickness of the first layer is reduced.
Claim 2
Independent Claim
151 words
A method for fabricating a semiconductor structure comprising the steps of forming, overlying a horizontal surface in a structure, a patterned layer having a vertical sidewall at the bottom of which is located an exposed surface of a first layer of first material, said first material containing atoms of a first kind, and forming on the vertical sidewall a masking layer of predetermined submicron horizontal thickness dimension, and using the masking layer to define a feature of the structure underlying the masking layer, the masking layer being formed by bombarding said horizontal surface portion with oxygen for a predetermined time to react with atoms of said first material, located at the exposed surface of the first layer, whereby the masking layer, comprising a chemical compound of oxygen and said atoms, is deposited on the vertical sidewall to the predetermined submicron thickness, and whereby the thickness of the first layer is reduced.
Claim 3
Dependent Claim
12 words
The method of claim 1 the first material is essentially a metal.
Claim 4
Dependent Claim
12 words
The method of claim 2 in which said metal is essentially aluminum.
Claim 5
Dependent Claim
12 words
The method of claim 1 said first material is essentially silicon dioxide.
Claim 6
Independent Claim
116 words
A method for forming a submicron feature by forming a sidewall oxide layer on a vertical sidewall of a first layer of first material located on a limited portion of a second layer of second material, different from the first, said second layer located over a horizontal major surface of a semiconductor body, comprising a first step of reactive ion etching said second layer to form by back-sputtering of said second material a sidewall oxide layer on the vertical sidewall of the first layer whereby the thickness of the second layer is reduced by said reactive ion etching, and a second step of using said sidewall oxide layer as a protective mask for defining said feature.
Claim 7
Independent Claim
116 words
A method for forming a submicron feature by forming a sidewall oxide layer on a vertical sidewall of a first layer of first material located on a limited portion of a second layer of second material, different from the first, said second layer located over a horizontal major surface of a semiconductor body, comprising a first step of reactive ion etching said second layer to form by back-sputtering of said second material a sidewall oxide layer on the vertical sidewall of the first layer whereby the thickness of the second layer is reduced by said reactive ion etching, and a second step of using said sidewall oxide layer as a protective mask for defining said feature.
Claim 8
Dependent Claim
39 words
The method of claim 5 in which the reactive ion etching is performed by bombardment with oxygen, said first layer is essentially a polycrystalline silicon layer, said body is essentially silicon, and said second layer is essentially silicon dioxide.
Claim 9
Dependent Claim
39 words
The method of claim 5 in which the reactive ion etching is performed by bombardment with oxygen, the body is essentially silicon, the first layer is essentially organic resist, and said second layer is essentially a layer of metal.
Claim 10
Dependent Claim
27 words
The method of claim 7 in which said second layer is separated from said major surface of the body by a layer comprising a polycrystalline silicon layer.
Claim 11
Dependent Claim
25 words
The method of claim 8 in which said polycrystalline silicon layer is separated from said major surface of the body by a silicon dioxide layer.
Claim 12
Dependent Claim
14 words
The method of claim 9 in which the layer of metal is essentially aluminum.
Claim 13
Dependent Claim
14 words
The method of claim 7 in which the layer of metal is essentially aluminum.
Claim 14
Dependent Claim
36 words
The method of claim 9, 10, or 11 further comprising a subsequent step of removing said first layer whereby at least a portion of said sidewall oxide layer remains overlying said major surface of the body.
Claim 15
Dependent Claim
100 words
The method of claim 12 in which the second step comprises selectively anisotropically etching said metal layer and said polycrystalline layer using the sidewall oxide layer as a protective mask, followed by the step of etching to remove completely said metal layer whereby said sidewall oxide layer is also removed and portions of said polycrystalline silicon layer remain only at those regions thereof essentially underlying said sidewall oxide layer prior to removal thereof, and whereby the width of said portions of said polycrystalline layer is of the submicron feature size as determined by the thickness of the sidewall oxide layer.
Claim 16
Dependent Claim
59 words
The method of claim 13 in which said protective mask prevents a chemical reaction of the polycrystalline silicon of the gate electrode at said sidewall thereof with a metal which is deposited on said protective layer and on a neighborhood thereof to form a silicide of said metal at said exposed portion of the major surface of the body.
Claim 17
Independent Claim
113 words
A method for fabricating an insulated gate field effect transistor in which a gate oxide layer is grown on a major horizontal surface of a silicon body and a polycrystalline silicon gate electrode having a vertical sidewall is formed on a limited portion of the surface of the gate oxide layer comprising the step of forming an insulating layer of predetermined thickness on said sidewall by subjecting an exposed portion of the gate oxide layer, complementary to said limited portion, to reactive ion etching with oxygen to expose the major surface of the body underlying said complementary portion, and whereby the thickness of the exposed portion of the gate oxide layer is reduced.
Claim 18
Independent Claim
113 words
A method for fabricating an insulated gate field effect transistor in which a gate oxide layer is grown on a major horizontal surface of a silicon body and a polycrystalline silicon gate electrode having a vertical sidewall is formed on a limited portion of the surface of the gate oxide layer comprising the step of forming an insulating layer of predetermined thickness on said sidewall by subjecting an exposed portion of the gate oxide layer, complementary to said limited portion, to reactive ion etching with oxygen to expose the major surface of the body underlying said complementary portion, and whereby the thickness of the exposed portion of the gate oxide layer is reduced.
Claim 19
Dependent Claim
55 words
The method of claim 15, or 14 further comprising the step of implanting impurity ions into the exposed portion of the surface of the body to form implanted regions therein, whereby said insulating layer on said sidewall acts as a protective mask against said implanting in order to provide an offset for the implanted regions.
References Cited (Backward Citations)
US4287660A
Cited
US3920483A
Cited
US4037307A
Cited
US4049521A
Cited
US4356210A
Cited
JPS5539647A
Cited
US4234362A
Cited
US4211582A
Cited
US4343082A
Cited
US4356623A
Cited
US4356623B1
Cited
US4343677A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-20 | 1987-08-22 | 1988-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-20 | 1991-08-22 | 1992-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-20 | 1995-08-22 | 1996-02-21 | $7700.00 | Window Closed / Lapsed |