US4343677A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for patterning films using reactive ion etching thereof
Assignee: AT&T Inc
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Filing: 1981-03-23
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Granted: 1982-08-10
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Expires: 2001-03-23
Abstract
Abstract In the patterning of an organic layer on a VLSI wafer by means of reactive oxygen (or other) ion anisotropic etching, build-ups of oxides (or other compounds) on the sidewalls of apertures formed in the organic layer are removed prior to etching the material, typically aluminum, of the VLSI wafer located at the bottom of these apertures, using the patterned organic layer as an etch mask.
Inventors
- 👤 Eliezer Kinsbron
- 👤 Hyman J. Levinstein
- 👤 William E. Willenbrock, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:42
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; C; C23; C23F; C23F4/00; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; Y; Y10; Y10S; Y10S438/00; Y10S438/963
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
92 words
In a method of processing a film, said film having a major surface coated with a layer of substance and said method including selectively etching the film using as a selective etch mask a patterned organic layer which has been patterned with windows, said windows formed by means of a first reactive ion etching step whereby said windows penetrate through the organic layer to the layer of substance, the step of removing build-ups of compounds of the substance from sidewalls of the windows prior to said selectively etching the layer of substance.
Claim 2
Dependent Claim
92 words
In a method of processing a film, said film having a major surface coated with a layer of substance and said method including selectively etching the film using as a selective etch mask a patterned organic layer which has been patterned with windows, said windows formed by means of a first reactive ion etching step whereby said windows penetrate through the organic layer to the layer of substance, the step of removing build-ups of compounds of the substance from sidewalls of the windows prior to said selectively etching the layer of substance.
Claim 3
Dependent Claim
15 words
The method of claim 1 in which said etching step is reactive oxygen ion etching.
Claim 4
Dependent Claim
11 words
The method of claim 2 in which said substance is aluminum.
Claim 5
Dependent Claim
29 words
The method of claim 3 in which the step of removing said build-ups is performed by treating the build-ups with a mixture of ethylene glycol and buffered hydrochloric acid.
Claim 6
Independent Claim
41 words
The method of claims 2, 3, or 4 in which the patterned organic layer is removed by a second reactive ion etching step after said layer of substance has been selectively etched using the patterned organic layer as an etch mask.
Claim 7
Dependent Claim
19 words
The method of claim 5 in which said second reactive ion etching step is substantially isotropic oxygen ion etching.
Claim 8
Dependent Claim
32 words
The method of claim 6 in which said etching of said layer of substance is performed in a chamber and in which said second ion etching step is performed in said chamber.
Claim 9
Dependent Claim
92 words
In a method of processing a film having a major surface thereof initially everywhere coated with a layer of substance which is then selectively etched using, as a selective mask against said etching, an organic layer which has been patterned with windows, said windows penetrating through the organic layer to the layer of substance, and said windows having been formed by a reactive oxygen ion anisotropic etching step, the step of: removing build-ups of oxides of said substance from sidewalls of said window prior to said selectively etching the layer of substance.
Claim 10
Dependent Claim
92 words
In a method of processing a film having a major surface thereof initially everywhere coated with a layer of substance which is then selectively etched using, as a selective mask against said etching, an organic layer which has been patterned with windows, said windows penetrating through the organic layer to the layer of substance, and said windows having been formed by a reactive oxygen ion anisotropic etching step, the step of: removing build-ups of oxides of said substance from sidewalls of said window prior to said selectively etching the layer of substance.
Claim 11
Dependent Claim
11 words
The method of claim 8 in which the substance is aluminum.
Claim 12
Dependent Claim
30 words
The method of claim 9 in which the step of removing the build-ups includes the step of treating the build-ups with a solution of ethylene glycol and buffered hydrofluoric acid.
Claim 13
Dependent Claim
42 words
The method of claim 8, 9, or 10 in which the patterned organic layer is completely removed by a substantially isotropic ion etching step after said layer of substance has been selectively etched using the patterned organic layer as an etch mask.
Claim 14
Dependent Claim
17 words
The method of claim 11 in which said substantially isotropic etching step is essentially oxygen ion etching.
Claim 15
Dependent Claim
33 words
The method of claim 12 in which said selective etching of said layer of substance is performed in a chamber and in which said substantially isotropic etching step is performed in said chamber.
Claim 16
Dependent Claim
11 words
The method of claim 8 in which the substance is silicon.
Claim 17
Dependent Claim
30 words
The method of claim 14 in which the step of removing the build-ups includes the steps of treating the build-ups with a liquid mixture of ammonium fluoride and hydrofluoric acid.
Claim 18
Dependent Claim
12 words
The method of claim 8 in which the substance is silicon dioxide.
Claim 19
Dependent Claim
30 words
The method of claim 16 in which the step of removing the build-ups includes the step of treating the build-ups with a liquid mixture of ammonium fluoride and hydrofluoric acid.
Claim 20
Dependent Claim
11 words
The method of claim 8 in which the substance is gold.
Claim 21
Dependent Claim
29 words
The method of claim 18 in which the step of removing the build-ups includes the step of treating the build-ups with a water solution of potassium iodide and iodine.
Claim 22
Dependent Claim
45 words
The method of claim 14, 15, 16, 17, 18, or 19 in which the patterned organic layer is completely removed by a substantially isotropic ion etching step after said layer of substance has been selectively etched using the patterned organic layer as an etch mask.
Claim 23
Dependent Claim
17 words
The method of claim 20 in which said substantially isotropic etching step is essentially oxygen ion etching.
Claim 24
Dependent Claim
33 words
The method of claim 21 in which said selective etching of said layer of substance is performed in a chamber and in which said substantially isotropic etching step is performed in said chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-09 | 1986-02-08 | 1986-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-09 | 1990-02-08 | 1990-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-09 | 1994-02-08 | 1994-08-10 | $7700.00 | Window Closed / Lapsed |