US4049521A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Cathode sputtering method for the manufacture of etched structures
Assignee: US Philips Corp
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Filing: 1976-06-07
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Granted: 1977-09-20
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Expires: 1996-06-07
Abstract
Abstract In usual practice, cathodically etched structures typically show either non-etched parts (strong readsorption of sputtered material) or the etched structure shows strong grooves at the edges of the etching mask (strong back-diffusion of sputtered material). With a variation of the working gas pressure an adjustability of the average free path length of the atoms of the sputtered material and hence the adjustability of the quantity of material redeposited on the basis of back-diffusion is obtained. The working gas pressure can hence be adjusted so that the etching time to remove the readsorbed material and the material deposited again by back-diffusion is locally constant and equal etching rates are obtained for all areas of the structure to be etched.
Inventors
- 👤 Ursula Convertini
- 👤 Heinz Dimigen
- 👤 Holger Luthje
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:59
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/262; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
116 words
A cathode sputtering method for the manufacture of etched structures in substrates covered with etching masks, in which the etching mask leaves exposed areas of different sizes on the substrate and in which said substrates are arranged on a cathode in a sputtering space and a gas discharge is initiated and maintained between the cathode and an anode, characterized in that the ratio of the distance d between anode and substrate to the average free path length λ of the atoms of the sputtered material, that is d/λ, is at least 1, and is adjusted so that the etching rates in the small and large areas of the layer to be etched are substantially equally large.
Claim 2
Dependent Claim
116 words
A cathode sputtering method for the manufacture of etched structures in substrates covered with etching masks, in which the etching mask leaves exposed areas of different sizes on the substrate and in which said substrates are arranged on a cathode in a sputtering space and a gas discharge is initiated and maintained between the cathode and an anode, characterized in that the ratio of the distance d between anode and substrate to the average free path length λ of the atoms of the sputtered material, that is d/λ, is at least 1, and is adjusted so that the etching rates in the small and large areas of the layer to be etched are substantially equally large.
Claim 3
Dependent Claim
25 words
A method as claimed in claim 1, characterized in that a rare gas, preferably argon, is used as an inert gas for said gas discharge.
Claim 4
Dependent Claim
21 words
A method as claimed in claim 1, characterized in that a photolacquer is used as the material for the etching mask.
Claim 5
Dependent Claim
20 words
A method as claimed in claim 1, characterized in that titanium is used as the material for the etching mask.
Claim 6
Dependent Claim
20 words
A method as claimed in claim 1, characterized in that molybdenum is used as the material for the etching mask.
Claim 7
Dependent Claim
20 words
A method as claimed in claim 1, characterized in that substrates in the form of homogeneous metal layers are etched.
Claim 8
Dependent Claim
17 words
A method as claimed in claim 1, characterized in that substrates of several metal layers are etched.
Claim 9
Dependent Claim
20 words
A method as claimed in claim 7, characterized in that the metals of the layers are titanium, platinum and gold.
References Cited (Backward Citations)
US3816198A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-19 | 1981-03-21 | 1981-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-19 | 1985-03-21 | 1985-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-19 | 1989-03-21 | 1989-09-20 | $7700.00 | Window Closed / Lapsed |