Patent US5061643A successfully refreshed from Google Patents.
US5061643A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of doping a growing crystalline semiconductor film
Assignee: Mitsubishi Electric Corp
•
Filing: 1989-12-27
•
Granted: 1991-10-29
•
Expires: 2009-12-27
Abstract
Abstract A method of growing a semiconductor thin film by MOCVD including doping with a doping gas producing a carrier concentration regulated by the decomposition speed of the doping gas, selectively irradiating the doping gas with ultraviolet light before the doping gas reaches the growing film, whereby the decomposition speed of the doping gas is increased.
Inventors
- 👤 Tetsuya Yagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:21
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B25/10; C30B25/105; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
93 words
A method of doping a growing crystalline compound semiconductor film comprising growing a crystalline compound semiconductor film by metal organic chemical vapor deposition, doping the growing crystalline compound semiconductor film by decomposing a doping gas to incorporate in the growing crystalline compound semiconductor film a dopant producing a charge carrier concentration regulated by the decomposition speed of the doping gas, and selectively irradiating only the doping gas with ultraviolet light before the doping gas reaches the growing crystalline compound semiconductor film to increase the decomposition speed of the doping gas at the substrate.
Claim 2
Independent Claim
93 words
A method of doping a growing crystalline compound semiconductor film comprising growing a crystalline compound semiconductor film by metal organic chemical vapor deposition, doping the growing crystalline compound semiconductor film by decomposing a doping gas to incorporate in the growing crystalline compound semiconductor film a dopant producing a charge carrier concentration regulated by the decomposition speed of the doping gas, and selectively irradiating only the doping gas with ultraviolet light before the doping gas reaches the growing crystalline compound semiconductor film to increase the decomposition speed of the doping gas at the substrate.
Claim 3
Dependent Claim
15 words
The doping method of doped claim 1 wherein the doping gas is SiH 4 .
Claim 4
Dependent Claim
17 words
The doping method of doped claim 1 wherein the doping gas is an organic compound of silicon.
Claim 5
Dependent Claim
14 words
The doping method of claim 1 wherein the doping gas is GeH 4 .
Claim 6
Dependent Claim
36 words
The doping method of claim 1 including varying the intensity of the ultraviolet light without changing the flow rate of the doping gas to control the charge carrier concentration in the growing crystalline compound semiconductor film.
Claim 7
Dependent Claim
49 words
The doping method of claim 1 including irradiating the doping gas with pulsed ultraviolet light of constant peak intensity and controlling the charge carrier concentration in the growing crystalline compound semiconductor film by varying at least one of the pulse width and pulse frequency of the pulsed ultraviolet light.
Claim 8
Independent Claim
156 words
A method of doping a growing compound crystalline semiconductor film including multiple layers and a pn junction comprising: growing a crystalline compound semiconductor film including a pn junction by metal organic chemical vapor deposition; doping a portion of the growing crystalline compound semiconductor film spaced from and at the n side of the pn junction by decomposing a first doping gas to incorporate in the growing crystalline compound semiconductor film a dopant producing a charge carrier concentration regulated by the flow rate of the first doping gas; and doping the growing crystalline compound semiconductor film in the neighborhood of the pn junction by decomposing a second doping gas to incorporate in the growing crystalline compound semiconductor film a dopant producing a charge carrier concentration regulated by the decomposition speed of the second doping gas while selectively irradiating the second doping gas with ultraviolet light before the second doping gas reaches the growing crystalline compound semiconductor film.
Claim 9
Independent Claim
156 words
A method of doping a growing compound crystalline semiconductor film including multiple layers and a pn junction comprising: growing a crystalline compound semiconductor film including a pn junction by metal organic chemical vapor deposition; doping a portion of the growing crystalline compound semiconductor film spaced from and at the n side of the pn junction by decomposing a first doping gas to incorporate in the growing crystalline compound semiconductor film a dopant producing a charge carrier concentration regulated by the flow rate of the first doping gas; and doping the growing crystalline compound semiconductor film in the neighborhood of the pn junction by decomposing a second doping gas to incorporate in the growing crystalline compound semiconductor film a dopant producing a charge carrier concentration regulated by the decomposition speed of the second doping gas while selectively irradiating the second doping gas with ultraviolet light before the second doping gas reaches the growing crystalline compound semiconductor film.
Claim 10
Dependent Claim
15 words
The doping method of claim 7 wherein the second doping gas is SiH 4 .
Claim 11
Dependent Claim
17 words
The doping method of claim 7 wherein the second doping gas is an organic compound of silicon.
Claim 12
Dependent Claim
15 words
The doping method of claim 7 wherein the second doping gas is GeH 4 .
Claim 13
Dependent Claim
15 words
The doping method of claim 7 wherein the first doping gas is H 2 Se.
Claim 14
Dependent Claim
55 words
The doping method of claim 7 including relatively heavily doping said portion spaced from said pn junction to produce a relatively high dopant concentration region and relatively lightly doping in the neighborhood of the pn junction to produce a relatively low dopant concentration region while producing a double heterojunction structure for a semiconductor laser device.
Claim 15
Dependent Claim
43 words
The doping method of claim 12 wherein the relatively high dopant concentration region has a dopant impurity concentration of about 4×10 18 cm -3 and the relatively low dopant concentration region has a dopant impurity concentration of about 1×10 18 cm -3 .
References Cited (Backward Citations)
US4657777A
Cited
US4772486A
Cited
US4778692A
Cited
US4847216A
Cited
US4748132A
Cited
US4918028A
Cited
JPS62264619A
Cited
JPS6328030A
Cited
US4885260A
Cited
US4843031A
Cited
US4843029A
Cited
US4782035A
Cited
US4914052A
Cited
US4933299A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-28 | 1995-04-29 | 1995-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-28 | 1999-04-29 | 1999-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-28 | 2003-04-29 | 2003-10-29 | $7700.00 | Window Closed / Lapsed |