US4772486A
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Process for forming a deposited film
Assignee: Canon Inc
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Filing: 1987-10-27
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Granted: 1988-09-20
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Expires: 2007-10-27
Abstract
Abstract A process for forming a deposited film, which comprises introducing, into a film forming space for forming said deposited film on a substrate, compounds A-1 and B-1 respectively represented by following general formulae and employed as raw materials for said deposited film: R.sub.n M.sup.1.sub.m (A-1) A.sup.1.sub.a B.sub.b (B-1) and active species capable of effecting a chemical reaction with at least one of said compounds, thereby forming a deposited film on said substrate, wherein m is a positive integer equal to the valence of R or a multiple thereof, n is a positive integer equal to the valence of M 1 or a multiple thereof, M 1 stands for an element of the group III of the periodic table, R stands for a hydrogen atom (H), a halogen atom (X) or a hydrocarbon group, a is a positive integer equal to the valence of B or a multiple thereof, b is a positive integer equal to the valence of A 1 or a multiple thereof, A 1 stands for an element of the group V of the periodic table, and B stands for a hydrogen atom (H), a halogen atom (X) or a hydrocarbon group.
Inventors
- 👤 Shunichi Ishihara
- 👤 Shigeru Ohno
- 👤 Masahiro Kanai
- 👤 Shunri Oda
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:52
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; C23C16/22; C23C16/30; C23C16/301; C23C16/305; C23C16/306
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
279 words
A process for forming a deposited film on a substrate in a film forming space, comprising generating in a activation space an active species capable of effecting a chemical reaction with at least one of a compound (A-1) or a compound (B-1); said active species being generated from at least one selected from the group consisting of H 2 , D 2 , HD and mixtures thereof; introducing said compound (A-1), said compound (B-1) and said active species into the film forming space; said film forming spaced being different from said activation spaced; and allowing said active species to react with at least one of said compound (A-1) or said compound (B 1) to thereby form a deposited film on the substrate; said compound (A-1) and compound (B-1) being starting materials for forming the deposited film wherein compound (A-1) has the formula R n M 1 m and compound (B-1) has the formula A 1 a B b , wherein m is a positve integer which is equal to or is a multiple of the valence of R, n is a positive integer which is equal to or is a multiple of the valence of M 1 , M 1 is an element of Group III of the periodic table, R is hydrogen, a halogen or a hydrocarbon group, a is a positive integer which is equal to or is a multiple of the valence of B, b is a positive integer which is equal to or is a multiple of hte valence of A 1 , A 1 is an element of Group v of the periodic table, and B is hydrogen, a halogen or a hydrocarbon group.
Claim 2
Dependent Claim
279 words
A process for forming a deposited film on a substrate in a film forming space, comprising generating in a activation space an active species capable of effecting a chemical reaction with at least one of a compound (A-1) or a compound (B-1); said active species being generated from at least one selected from the group consisting of H 2 , D 2 , HD and mixtures thereof; introducing said compound (A-1), said compound (B-1) and said active species into the film forming space; said film forming spaced being different from said activation spaced; and allowing said active species to react with at least one of said compound (A-1) or said compound (B 1) to thereby form a deposited film on the substrate; said compound (A-1) and compound (B-1) being starting materials for forming the deposited film wherein compound (A-1) has the formula R n M 1 m and compound (B-1) has the formula A 1 a B b , wherein m is a positve integer which is equal to or is a multiple of the valence of R, n is a positive integer which is equal to or is a multiple of the valence of M 1 , M 1 is an element of Group III of the periodic table, R is hydrogen, a halogen or a hydrocarbon group, a is a positive integer which is equal to or is a multiple of the valence of B, b is a positive integer which is equal to or is a multiple of hte valence of A 1 , A 1 is an element of Group v of the periodic table, and B is hydrogen, a halogen or a hydrocarbon group.
Claim 3
Dependent Claim
22 words
A process according to claim 1, wherein M 1 is selected from the group consisting of B, Al, Ga, In and Tl.
Claim 4
Dependent Claim
22 words
A process according to claim 1, wherein A 1 is selected from the group consisting of N, P, As, Sb and Bi.
Claim 5
Dependent Claim
278 words
A process for forming a deposited film on a substrate in a film forming space, comprising generating in an activation space an active species capable of effecting a chemical reaction with at least one of a compound (A-1) or a compound (B-1); said active species being generated from at least one selected from the group consisting of H 2 , D 2 , HD and mixtures thereof; introducing said compound (a 2), said compound (B-2) and said active species into the film forming space; said film forming space being different from said activation space; and allowing said activespecies to react with at least one of said compound (A-2) or said compound (B-2) to thereby form a deposited film on the substrate; said compound (A-2) and compound (B-2) being starting materials for forming the deposited film wherein compound (A-2) has the formula R n M 2 m and compound (B-2) has the formula A 2 a B b , wherein m is a positive integer which is equal to or is a multiple of the valence of R, n is a positive integer which is equal to or is a multiple of the valence of M 2 , M 2 is an element of Group II of the periodic table, R is hydrogen, a halogen or a hydrocarbon group, a is a positive integer which is equal to or is a multiple of the valence of B, b is a positive integer which is equal to or is a multiple of the valence of A 2 , A 2 is an element of Group vI of the periodic table, and B is hydrogen, a halogen or a hydrocarbon group.
Claim 6
Dependent Claim
278 words
A process for forming a deposited film on a substrate in a film forming space, comprising generating in an activation space an active species capable of effecting a chemical reaction with at least one of a compound (A-1) or a compound (B-1); said active species being generated from at least one selected from the group consisting of H 2 , D 2 , HD and mixtures thereof; introducing said compound (a 2), said compound (B-2) and said active species into the film forming space; said film forming space being different from said activation space; and allowing said activespecies to react with at least one of said compound (A-2) or said compound (B-2) to thereby form a deposited film on the substrate; said compound (A-2) and compound (B-2) being starting materials for forming the deposited film wherein compound (A-2) has the formula R n M 2 m and compound (B-2) has the formula A 2 a B b , wherein m is a positive integer which is equal to or is a multiple of the valence of R, n is a positive integer which is equal to or is a multiple of the valence of M 2 , M 2 is an element of Group II of the periodic table, R is hydrogen, a halogen or a hydrocarbon group, a is a positive integer which is equal to or is a multiple of the valence of B, b is a positive integer which is equal to or is a multiple of the valence of A 2 , A 2 is an element of Group vI of the periodic table, and B is hydrogen, a halogen or a hydrocarbon group.
Claim 7
Dependent Claim
21 words
A process according to claim 4, wherein M 2 is selected from the group consisting of O, S, Se and Te.
Claim 8
Dependent Claim
21 words
A process according to claim 4, wherein A 2 is selected from the group consisting of O, S, Se and Te.
Claim 9
Dependent Claim
300 words
A process for forming a deposited film on a substrate in a film forming space, comprising generating in an activation space an active halogen capable of effecting a chemical reaction with at least one of a compound (A-1) or a compound (B-1); said active haIogen being generated from at least one selected from the group consisting of F 2 , Cl 2 , Br 2 , I 2 , BrF, CIF, CIF 3 , ClF 5 , BrF 5 , BrF 3 , IF 7 , IF 5 , ICI, IBr, and mixtures thereof; introducing said compound (A-1), said compound (B-1) and said active halogen into the film forming space; said film forming space being different from said activation space; and allowing said actie halogen to react with at least one of said compound (A-1) or said compound (B-1) to thereby form a deposited film on the substraste; said compount (A-1) and compound (B-1) being starting materials for forming the depostied film wherein compound (A-1) has the formula R n M 1 m and compounds (B-1) hast he formula AlaBb, wherein m is a positive integer which is equal to or is a multiple of the valence of R, n is a positive integer which is equal to or is a multiple of the valence of M 1 , M 1 is an element of Group III of the periodic table, R is hydrogen, a halogen or a hydrocarbon group, a is a positive integer which is equal to or is a multiple of the valence of B, b is a positive integer which is equal to or is a multiple of the valence of A 1 , A 1 is an element of Group V of the periodic table, and B is hydrogen, a halogen or a hydrocarbon group.
Claim 10
Dependent Claim
300 words
A process for forming a deposited film on a substrate in a film forming space, comprising generating in an activation space an active halogen capable of effecting a chemical reaction with at least one of a compound (A-1) or a compound (B-1); said active haIogen being generated from at least one selected from the group consisting of F 2 , Cl 2 , Br 2 , I 2 , BrF, CIF, CIF 3 , ClF 5 , BrF 5 , BrF 3 , IF 7 , IF 5 , ICI, IBr, and mixtures thereof; introducing said compound (A-1), said compound (B-1) and said active halogen into the film forming space; said film forming space being different from said activation space; and allowing said actie halogen to react with at least one of said compound (A-1) or said compound (B-1) to thereby form a deposited film on the substraste; said compount (A-1) and compound (B-1) being starting materials for forming the depostied film wherein compound (A-1) has the formula R n M 1 m and compounds (B-1) hast he formula AlaBb, wherein m is a positive integer which is equal to or is a multiple of the valence of R, n is a positive integer which is equal to or is a multiple of the valence of M 1 , M 1 is an element of Group III of the periodic table, R is hydrogen, a halogen or a hydrocarbon group, a is a positive integer which is equal to or is a multiple of the valence of B, b is a positive integer which is equal to or is a multiple of the valence of A 1 , A 1 is an element of Group V of the periodic table, and B is hydrogen, a halogen or a hydrocarbon group.
Claim 11
Dependent Claim
22 words
A process according to claim 7, wherein M 1 is selected from the group consisting of B, Al, Ga, In and Tl.
Claim 12
Dependent Claim
22 words
A process according to claim 7, wherein A 1 is selected from the group consisting of N, P, As, Sb and Bi.
Claim 13
Dependent Claim
295 words
A process for forming a depostied film on a substrate in a film forming space, comprising generating in an activation space an active halogen capable of effecting a chemical reaction with at least one of a compound (A-I) or a compound (B-1); said active halogen being generated from at least one selected from the group consisting of F 2 , C12, Br 2 , I 2 , BrF, ClF, CIF 3 , CIF 5 , BrF 5 , BrF 3 , IF 7 , IF 5 , ICI, IBr, and mixtures thereof; introducing said compound (A-2), said compound (B 2) and said active halogen into the film forming space; said film forming space being different from said activation space; and allowing said active halogen to react witgh at least one of said compound (A-2) or said compound (B-2) to thereby form a deposited film on the substrate; said compound (A-2) and compound (B-2) being starting materials for fomring the deposited film wherein compound (A-2) has the formula R n M 2 m and compound (B-2) has the formula A2aBb, wherein m is a positive integer which is equal to or is a multiple of the valence of R, n is a positive integer which is equal to or is a multiple of the valence of M 2 , M 2 is an element of Group II of the periodic table, r is hydrogen, a halogen or a hydrocarbon group, a is a positive integer which is equal to or is a multiple of the valence of B, b is a positive integer which is equal to or is a multiple of the valence of A2 is an element of Group vI of the periodic talbe, and B is hydrogen, a halogen or a hydrocarbon group.
Claim 14
Dependent Claim
295 words
A process for forming a depostied film on a substrate in a film forming space, comprising generating in an activation space an active halogen capable of effecting a chemical reaction with at least one of a compound (A-I) or a compound (B-1); said active halogen being generated from at least one selected from the group consisting of F 2 , C12, Br 2 , I 2 , BrF, ClF, CIF 3 , CIF 5 , BrF 5 , BrF 3 , IF 7 , IF 5 , ICI, IBr, and mixtures thereof; introducing said compound (A-2), said compound (B 2) and said active halogen into the film forming space; said film forming space being different from said activation space; and allowing said active halogen to react witgh at least one of said compound (A-2) or said compound (B-2) to thereby form a deposited film on the substrate; said compound (A-2) and compound (B-2) being starting materials for fomring the deposited film wherein compound (A-2) has the formula R n M 2 m and compound (B-2) has the formula A2aBb, wherein m is a positive integer which is equal to or is a multiple of the valence of R, n is a positive integer which is equal to or is a multiple of the valence of M 2 , M 2 is an element of Group II of the periodic table, r is hydrogen, a halogen or a hydrocarbon group, a is a positive integer which is equal to or is a multiple of the valence of B, b is a positive integer which is equal to or is a multiple of the valence of A2 is an element of Group vI of the periodic talbe, and B is hydrogen, a halogen or a hydrocarbon group.
Claim 15
Dependent Claim
19 words
A process according to claim 10, wherein M 2 is selected from group consisting of Zn, Cd and Hg.
Claim 16
Dependent Claim
20 words
A process according to claim 10, wherein A 2 is selected from group consisting of O, S, Se and Te.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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