US4782035A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a waveguide for a DFB laser using photo-assisted epitaxy
Assignee: Mitsubishi Electric Corp
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Filing: 1987-11-12
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Granted: 1988-11-01
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Expires: 2007-11-12
Abstract
Abstract A method for producing a semiconductor laser comprising depositing a first semiconductor layer comprising n-type InP on an n-type InP substrate, depositing a diffraction grating of InGaAsP which includes or excludes doping impurities on the first semiconductor layer with irradiating interference fringes by a light excitation crystalline growth means, and burying a portion of the diffraction grating with InGaAsP including or excluding doping impurities with irradiating interference fringes reverse in light and darkness from said interference fringes used in depositing the diffraction grating.
Inventors
- 👤 Masatoshi Fujiwara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:44
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/1228; Y; Y10; Y10S; Y10S148/00; Y10S148/048; Y10S148/095; Y10S148/119; Y10S148/143
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
91 words
A method of producing a semiconductor laser comprising: a process of producing a first semiconductor layer comprising n type InP on an n type InP substrate; a process of producing a diffraction grating of InGaAsP into which impurities are doped or undoped on said first semiconductor layer with irradiating interference fringes by a light exitation crystalline growth method; and a process of burying a portion of said diffraction grating by InGaAsP into which impurities are undoped or doped with irradiating interference fringes reverse to said interference fringes in light and darkness.
Claim 2
Independent Claim
91 words
A method of producing a semiconductor laser comprising: a process of producing a first semiconductor layer comprising n type InP on an n type InP substrate; a process of producing a diffraction grating of InGaAsP into which impurities are doped or undoped on said first semiconductor layer with irradiating interference fringes by a light exitation crystalline growth method; and a process of burying a portion of said diffraction grating by InGaAsP into which impurities are undoped or doped with irradiating interference fringes reverse to said interference fringes in light and darkness.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-01 | 1992-05-02 | 1992-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-01 | 1996-05-02 | 1996-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-01 | 2000-05-02 | 2000-11-01 | $7700.00 | Window Closed / Lapsed |