US4280107A
Expired / Lapsed
US
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Apertured and unapertured reflector structures for electroluminescent devices
Assignee: Xerox Corp
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Filing: 1979-08-08
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Granted: 1981-07-21
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Expires: 1999-08-08
Abstract
Abstract A multilayered reflector structure deposited on the light emitting surface of a semiconductor electroluminescent device and consecutively comprising a layer of low refractive index material, a layer of intermediate refractive index material and a layer of high refractive index material. Ablative means remove and form an aperture in the outer high index layer at the region of optical radiation emission from said device whereby the level of reflectivity is highest at the center of the aperture as compared to structure regions adjacent to the aperture. In this manner, fundamental mode stabilization may be achieved. Also disclosed is a nonablated three layered reflector structure.
Inventors
- 👤 Donald R. Scifres
- 👤 Fernando A. Ponce
- 👤 G. A. Neville Connell
- 👤 William Streifer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:20
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; H01; H01S; H01S5/00; H01S5/02; H01S5/028
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
149 words
In a semiconductor laser device including an active layer formed at a p-n junction in the device capable of emitting a substantially coherent light at a predetermined wavelength along said active layer when made opertive by means of a current applied across said junction, the emission of the light from the device being from opposed facet surfaces thereof perpendicular to said active layer, a plurality of contiguous layers on at least one facet surface of said device characterized in that these layers comprise, as consecutively deposited, a low refractive index material, an intermediate refractive index material, and a high refractive index ablative material, the total thickness of said layers being substantially antireflective at said predetermined wavelength, said device, when operated, forms an aperture through said high index material, said low and intermediate materials having a total thickness at said aperture substantially reflective to said light at said predetermined wavelength.
Claim 2
Dependent Claim
149 words
In a semiconductor laser device including an active layer formed at a p-n junction in the device capable of emitting a substantially coherent light at a predetermined wavelength along said active layer when made opertive by means of a current applied across said junction, the emission of the light from the device being from opposed facet surfaces thereof perpendicular to said active layer, a plurality of contiguous layers on at least one facet surface of said device characterized in that these layers comprise, as consecutively deposited, a low refractive index material, an intermediate refractive index material, and a high refractive index ablative material, the total thickness of said layers being substantially antireflective at said predetermined wavelength, said device, when operated, forms an aperture through said high index material, said low and intermediate materials having a total thickness at said aperture substantially reflective to said light at said predetermined wavelength.
Claim 3
Dependent Claim
28 words
In the semiconductor laser device of claim 1 wherein an additional layer of either said low or intermediate index material is deposited on said high index material layer.
Claim 4
Dependent Claim
26 words
In the semiconductor laser device of claim 2 wherein said additional layer is deposited on said high index material layer after the formation of said aperture.
Claim 5
Dependent Claim
44 words
In the semiconductor laser device of claim 1 wherein at least one additional layer of said high index material is deposited on the initially deposited layer of said high index material after formation of said aperture, said device again operated to form said aperture.
Claim 6
Dependent Claim
35 words
In the semiconductor laser device of claim 1 wherein multiple alternating layers of said low and intermediate layers are deposited on said one facet surface prior to the deposition of said high index material layer.
Claim 7
Dependent Claim
44 words
In the semiconductor laser device of claim 1 wherein a plurality of contiguous outer layers are sequentially deposited on said high index material layer and comprise alternate layers of high and low refractive index material forming a reflector having a high level of reflectivity.
Claim 8
Dependent Claim
47 words
In the semiconductor laser device of claim 6 wherein said contiguous outer layers comprise a material alternately selected from the group consisting of Al 2 O 3 , MgF 2 , SiO 2 and ZrO 2 and from the group consisting of Si and TiO 2 .
Claim 9
Dependent Claim
31 words
In the semiconductor laser device of claim 1 wherein in said first formed low and intermediate index material layers have a combined thickness of about one half of said predetermined wavelength.
Claim 10
Dependent Claim
16 words
In the semiconductor laser device of claim 1 wherein said high index material layer comprises tellurium.
Claim 11
Dependent Claim
22 words
In the semiconductor laser device of claim 8 wherein the thickness of said tellurium layer is approximately 100 A to 400 A.
Claim 12
Dependent Claim
41 words
In the semiconductor laser device of claim 1 wherein the material for said low index layer(s) comprises Al 2 O 3 and the material for said intermediate index layer(s) comprises silicon and the material for said high index layer comprises tellurium.
Claim 13
Dependent Claim
72 words
In the semiconductor laser device of claim 1 wherein the material for said low index layer(s) is selected from the group consisting of Al 2 O 3 , MgF 2 , SiO 2 and ZrO 2 , and the material for said intermediate index layer(s) comprises silicon and the material for said high index layer is selected from a group consisting of antimony, bismuth, tellurium, selenium, germanium, arsenic, sulfur or admixtures thereof.
Claim 14
Dependent Claim
104 words
A multilayered reflector structure deposited on at least one facet surface perpendicular to the active layer of a semiconductor laser consecutively comprising a layer of low refractive index material, a layer of intermediate refractive index material and an ablative layer of high refractive index material, said laser operative to form an aperture in said ablative layer at the region of optical radiation emission from said structure, the thickness of said layers being such that when the material from said high index layer is removed to form said aperture, the level of reflectivity of said structure is the highest in said region of said aperture.
Claim 15
Dependent Claim
104 words
A multilayered reflector structure deposited on at least one facet surface perpendicular to the active layer of a semiconductor laser consecutively comprising a layer of low refractive index material, a layer of intermediate refractive index material and an ablative layer of high refractive index material, said laser operative to form an aperture in said ablative layer at the region of optical radiation emission from said structure, the thickness of said layers being such that when the material from said high index layer is removed to form said aperture, the level of reflectivity of said structure is the highest in said region of said aperture.
Claim 16
Dependent Claim
39 words
The multilayered reflector structure of claim 13 wherein an additional layer of either said low or intermediate index material is deposited on said high index material layer to prevent enlargement of said aperture upon subsequent operation of said laser.
Claim 17
Dependent Claim
83 words
The multilayered reflector structure of claims 13 or 14 wherein the material for said low index layer(s) is selected from the group consisting of Al 2 O 3 , MgF 2 , SiO 2 and ZrO 2 , and the material for said intermediate index layer(s) is selected from the group consisting of Si and TiO 2 and the material for said high index layer is selected from the group consisting of antimony, bismuth, tellurium, selenium, germanium, arsenic and sulfur or admixtures thereof.
Claim 18
Dependent Claim
79 words
A multilayered reflector structure deposited on the light emitting surface of a semiconductor electroluminescent device and consecutively comprising a layer of low refractive index material, a layer of intermediate refractive index material and a layer of high refractive index material, ablative means to remove and form an aperture in said high index layer at the region of optical radiation emission from said device whereby the level of reflectivity for said emission is highest at the center of said aperture.
Claim 19
Dependent Claim
79 words
A multilayered reflector structure deposited on the light emitting surface of a semiconductor electroluminescent device and consecutively comprising a layer of low refractive index material, a layer of intermediate refractive index material and a layer of high refractive index material, ablative means to remove and form an aperture in said high index layer at the region of optical radiation emission from said device whereby the level of reflectivity for said emission is highest at the center of said aperture.
Claim 20
Dependent Claim
15 words
The multilayered reflector structure of claim 16 wherein said device is a semiconductor injection laser.
Claim 21
Dependent Claim
16 words
The multilayered reflector structure of claim 17 wherein said ablative means is said semiconductor injection laser.
Claim 22
Dependent Claim
27 words
The multilayered reflector structure of claim 17 wherein an additional layer of either said low or intermediate index material is deposited on said high index material layer.
Claim 23
Dependent Claim
17 words
The multilayered reflector structure of claim 16 wherein said ablative means is an externally aligned laser source.
Claim 24
Dependent Claim
15 words
The multilayered reflector structure of claim 16 wherein said device is a light emitting diode.
Claim 25
Dependent Claim
83 words
The multilayered reflector structure of claims 16, 17 or 18 wherein the material for said low index layer(s) is selected from the group consisting of Al 2 O 3 , MgF 2 , SiO 2 and ZrO 2 , and the material for said intermediate layer(s) is selected from the group consisting of Si and TiO 2 and the material for said high index layer is selected from the group consisting of antimony, bismuth, tellurium, selenium, germanium, arsenic and sulfur or admixtures thereof.
Claim 26
Dependent Claim
39 words
The multilayered reflector structure of claim 16 wherein the material for said high index layer comprises a crystalline or amphorous alloy of two or more of the materials selected from the group consisting of selenium, tellurium, arsenic and germanium.
Claim 27
Dependent Claim
20 words
The multilayered reflector structure of claim 16 wherein the material for said low index layer acts as a thermal barrier.
Claim 28
Dependent Claim
15 words
The multilayered reflector structure of claim 24 wherein said low index layer material comprises perylene.
Claim 29
Dependent Claim
44 words
The multilayered reflector structure of claim 16 wherein at least one additional high index layer is deposited on the initially deposited high index layer after formation of said aperture, said ablative means to remove and reform said aperture in said additional high index layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-07-20 | 1985-01-19 | 1985-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-07-20 | 1989-01-19 | 1989-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-07-20 | 1993-01-19 | 1993-07-21 | $7700.00 | Window Closed / Lapsed |