Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
194 words
A semiconductor laser capable of fundamental lateral mode selectivity having an optical waveguide which substantially confines optical radiation capable of being generated therein, which comprises: a rectangular parallelepiped body of semiconductor material having opposed end surfaces, opposed side surfaces extending to said end surfaces, and opposed first and second contact surfaces extending to said end surfaces and said side surfaces, said optical waveguide extending from one end surface to the opposite end surface; a stripe contact on said first contact surface, said stripe contact being spaced from said side surfaces and extending to said end surfaces, said stripe contact defining the lateral width of said optical waveguide; an opposite contact on said second contact surface; and optical reflective means contiguous to the waveguide at the end surfaces, said optical reflective means at at least one of said end surfaces being only within the lateral width of the optical waveguide and having a width in the lateral direction less than the spatial width of the fundamental lateral mode radiation in the absence of the reflective means so as to provide the fundamental lateral mode radiation with greater reflectivity than the higher order lateral mode radiations.
Claim 2
Dependent Claim
194 words
A semiconductor laser capable of fundamental lateral mode selectivity having an optical waveguide which substantially confines optical radiation capable of being generated therein, which comprises: a rectangular parallelepiped body of semiconductor material having opposed end surfaces, opposed side surfaces extending to said end surfaces, and opposed first and second contact surfaces extending to said end surfaces and said side surfaces, said optical waveguide extending from one end surface to the opposite end surface; a stripe contact on said first contact surface, said stripe contact being spaced from said side surfaces and extending to said end surfaces, said stripe contact defining the lateral width of said optical waveguide; an opposite contact on said second contact surface; and optical reflective means contiguous to the waveguide at the end surfaces, said optical reflective means at at least one of said end surfaces being only within the lateral width of the optical waveguide and having a width in the lateral direction less than the spatial width of the fundamental lateral mode radiation in the absence of the reflective means so as to provide the fundamental lateral mode radiation with greater reflectivity than the higher order lateral mode radiations.
Claim 3
Dependent Claim
56 words
The semiconductor laser in accordance with claim 1 wherein said reflective means comprises an antireflection layer on said end surfaces with a stripe opening in said antireflection layer, said stripe opening having a width in the lateral direction less than the spatial width of the fundamental lateral mode radiation in the absence of the antireflection layer.
Claim 4
Dependent Claim
59 words
The semiconductor laser in accordance with claim 1 wherein said optical reflective means comprises an electrical insulation layer on said end surfaces, and an optical reflection stripe on said insulation layer, said reflection stripe having a width in the lateral direction less than the spatial width of the fundamental lateral mode radiation in the absence of the reflection stripe.
Claim 5
Dependent Claim
95 words
The semiconductor laser in accordance with claim 1 wherein said reflective means comprises a plurality of contiguous stripe layers of alternatively low and high index of refraction, a first stripe layer being contiguous to a portion of said optical waveguide at the end surface, with the other stripe layers sequentially spaced from said end surface, each of said stripe layers being one-quarter optical wavelength in thickness, and each stripe layer having a width in the lateral direction less than the spatial width of the fundamental lateral mode radiation in the absence of the stripe layers.
Claim 6
Dependent Claim
17 words
The semiconductor laser in accordance with claim 4 wherein the contiguous stripe layers are of dielectric material.
Claim 7
Dependent Claim
19 words
The semiconductor laser in accordance with claim 1 wherein said reflective means are on both of said end surfaces.