Process for the deposition by epitaxy of a doped material

Claim 2

A process for depositing a semiconductor layer of a doped material on the surface of a substrate by epitaxy, consisting essentially of: heating said substrate in a tight enclosure; forming a beam of doping unionized particles of an aggregate molecular structure of the type X 4 by evaporation; forming an electron beam of a determined density; forming a molecular flux of said material which constitutes said semiconductor layer; and subjecting the substrate surface to the combined action of said molecular flux and said particle beam while simultaneously irradiating at least a portion of the substrate surface with said electron beam in order to increase the quantity of doping particles within the portion of the material layer exposed to said electron beam.

Claim 3

The deposition process according to claim 1, wherein the material is a semiconductor material.

Claim 4

The deposition process according to claim 1, wherein the material is of silicon or a III-V material.

Claim 5

The deposition process according to claim 3, wherein the doping particles are particles of arsenic, phosphorus, antimony or boron for a silicon material.

Claim 6

The deposition process according to claim 1, wherein the substrate is a monocrystalline semiconductor material.

Claim 7

The deposition process according to claim 1, wherein the substrate is of silicon or a III-V material.

Claim 8

The deposition process according to claim 1, wherein the substrate is heated to a temperature between 600° and 800° C.

Claim 9

The deposition process according to claim 1, wherein the molecular flux of said material is formed by the irradiation of a target thereof with an electron beam.

Claim 10

A process for the deposition according to claim 1 of several layers of the same material doped in a different way, wherein the intensity of the electron beam and/or the doping particle beam is suddenly modified.

Claim 11

A process for depositing a semiconductor layer of a doped material on the surface of a monocrystalline silicon substrate by epitaxy, consisting essentially of: heating said substrate in a tight enclosure; forming a beam of dopoing unionized particles of an aggregate molecular structure of the type X 4 by evaporation of an element selected from the group consisting of arsenic, phosphorus, antimony and boron; forming an electron beam of a determined density; forming a molecular flux of the material which constitutes said semiconductor layer; and subjecting the substrate surface to the combined action of said molecular flux and said particle beam while simultaneously irradiating at least a portion of the substrate surface with said electron beam in order to increase the quantity of doping particles within the portion of the material layer exposed to said electron beam.

Claim 12

A process for depositing a semiconductor layer of a doped material on the surface of a monocrystalline silicon substrate by epitaxy, consisting essentially of: heating said substrate in a tight enclosure; forming a beam of dopoing unionized particles of an aggregate molecular structure of the type X 4 by evaporation of an element selected from the group consisting of arsenic, phosphorus, antimony and boron; forming an electron beam of a determined density; forming a molecular flux of the material which constitutes said semiconductor layer; and subjecting the substrate surface to the combined action of said molecular flux and said particle beam while simultaneously irradiating at least a portion of the substrate surface with said electron beam in order to increase the quantity of doping particles within the portion of the material layer exposed to said electron beam.