US4994301A
Expired / Lapsed
US
⏱️ 0.0 years remaining
ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate
Assignee: NIHON SINKU GIJUTSU A CORP OF JAPAN KK
•
Filing: 1987-06-30
•
Granted: 1991-02-19
•
Expires: 2007-06-30
Abstract
Abstract A wafer, in which at least one via hole is made in an insulating film formed on the substrate, and a first metallic film is formed in the via hole is prepared. The wafer is held in a wafer holder in a reaction chamber under reduced pressure. WF 6 gas and H 2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer, such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film in the chemical vapor deposition process. The temperature difference is due to the differences of the adsorption ratios of infrared light of the insulating film, the substrate and the first metallic film. The WF 6 gas and H 2 gas are made to flow in flat or sheet form substantially parallel to the surface of the wafer, and in inernt gas, such as Ar, is made to flow toward the surface of the wafer to control the flow of WF 6 and H 2 gas.
Inventors
- 👤 Yoshiro Kusumoto
- 👤 Kazuo Takakuwa
- 👤 Tetsuya Ikuta
- 👤 Akitoshi Suzuki
- 👤 Izumi Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:05
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45502; C23C16/45504; C23C16/04; C23C16/045; C23C16/45519; C23C16/45563; C23C16/48; C23C16/481; Y; Y10; Y10S; Y10S427/00; Y10S427/101
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
192 words
A CVD (Chemical Vapor Deposition) method for selectively depositing metal on a substrate comprising the steps of: (A) holding a wafer on a wafer holder in a reaction chamber to be put under a reduced pressure; at least one via hole or contact hole being made in an insulating film formed on a substrate of said wafer and a first metallic film being formed in said via hole or contact hole; and (B) introducing a gas containing a metallic element and a reduction gas into said reaction chamber under the reduced pressure and directing light of a heating lamp onto said wafer so that some temperature difference is made between said insulating film and said first metallic film, utilizing some difference of absorption ratios of infrared components of said light among said insulating film, said substrate, and said first metallic film such that a chemical reaction is effected only on said first metallic film whereby a second metallic film of said metallic element is formed only on said first metallic film and said insulating film and said substrate are unaffected by said introduced gas containing said metallic element and said reduction gas.
Claim 2
Dependent Claim
192 words
A CVD (Chemical Vapor Deposition) method for selectively depositing metal on a substrate comprising the steps of: (A) holding a wafer on a wafer holder in a reaction chamber to be put under a reduced pressure; at least one via hole or contact hole being made in an insulating film formed on a substrate of said wafer and a first metallic film being formed in said via hole or contact hole; and (B) introducing a gas containing a metallic element and a reduction gas into said reaction chamber under the reduced pressure and directing light of a heating lamp onto said wafer so that some temperature difference is made between said insulating film and said first metallic film, utilizing some difference of absorption ratios of infrared components of said light among said insulating film, said substrate, and said first metallic film such that a chemical reaction is effected only on said first metallic film whereby a second metallic film of said metallic element is formed only on said first metallic film and said insulating film and said substrate are unaffected by said introduced gas containing said metallic element and said reduction gas.
Claim 3
Dependent Claim
34 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which the metal element of said first metallic film is the same as that of the second metallic film.
Claim 4
Dependent Claim
33 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which the metal element of the first metallic film is different from that of the second metallic film.
Claim 5
Dependent Claim
63 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which said reduction is H 2 , and said gas containing metallic element as a constituent is one or more of WF 6 , MoF 6 , TaF 5 , CrF 4 , TiF 4 , TiCl 4 , MoCl 5 , WCl 6 and AlCl 3 .
Claim 6
Dependent Claim
41 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which said insulating film is one or more of SiO 2 , Al 2 O 3 , BSG, PSG, BPSG (Oxides), BN (nitride) and silicon oxynitride.
Claim 7
Dependent Claim
45 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which said first metallic film is one or more of W, Mo, Ta, Cr, Ti, Al, Pt, Pd, Au, Ni (metals) and alloys consisting of two or more of them.
Claim 8
Dependent Claim
27 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which said first metallic film is metal silicide or TiN (metal nitride).
Claim 9
Dependent Claim
36 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which said substrate of the wafer is made of Si, SiO 2 , Al 2 O 3 , glass, or sapphire.
Claim 10
Dependent Claim
23 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which said heating lamp is an infrared lamp.
Claim 11
Dependent Claim
35 words
A CVD method for selectively depositing metal on a substrate according to claim 9, in which light components of wave length 0.75 to 5 μm are most intensive in the light of said infrared lamp.
Claim 12
Dependent Claim
53 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which an optical filter means is interposed between said heating lamp and said wafer so that light components having a wave length of 0.75 to 5 μm are the most intensive in the light directed onto said wafer.
Claim 13
Dependent Claim
62 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which said method further comprises the step of directing an inert gas or a gas containing mainly inert gas towards said wafer, and said gas containing metallic element and said reduction gas are introduced in flat or sheet form substantially parallel to the surface of the wafer.
Claim 14
Dependent Claim
21 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which said wafer holder is rotated.
Claim 15
Dependent Claim
36 words
A CVD method for selectively depositing metal on a substrate according to claim 1, in which said wafer holder is transparent, and the light of said heating lamp passes through said wafer holder onto said wafer.
Claim 16
Dependent Claim
29 words
A CVD method for selectively depositing metal on a substrate according to claim 14, in which an inert gas is directed between said heating lamp and said wafer holder.
Claim 17
Dependent Claim
140 words
A CVD method for selectively depositing metal on a substrate comprising the steps of: (A) holding a wafer on a wafer holder in a reaction chamber to be put under a reduced pressure, at least one via hole or contact hole being made in an insulating film formed on a substrate of said wafer and a first metallic film being formed in said via hole or contact hole; and (B) introducing a gas containing a metallic element and a reduction gas in flat or sheet form substantially parallel to the surface of said wafer into said reaction chamber under the reduced pressure, introducing an inert gas or a second gas containing mainly inert gas towards the surface of said wafer and heating said wafer whereby a second metallic film of said metal element is formed on said first metallic film.
Claim 18
Dependent Claim
140 words
A CVD method for selectively depositing metal on a substrate comprising the steps of: (A) holding a wafer on a wafer holder in a reaction chamber to be put under a reduced pressure, at least one via hole or contact hole being made in an insulating film formed on a substrate of said wafer and a first metallic film being formed in said via hole or contact hole; and (B) introducing a gas containing a metallic element and a reduction gas in flat or sheet form substantially parallel to the surface of said wafer into said reaction chamber under the reduced pressure, introducing an inert gas or a second gas containing mainly inert gas towards the surface of said wafer and heating said wafer whereby a second metallic film of said metal element is formed on said first metallic film.
Claim 19
Dependent Claim
34 words
A CVD method for selectively depositing metal on a substrate according to claim 16, in which the metal element of said first metallic film is the same as that of said second metallic film.
Claim 20
Dependent Claim
33 words
A CVD method for selectively depositing metal on a substrate according to claim 16, in which the metal element of said first metallic film is different from that of said second metallic film.
Claim 21
Dependent Claim
66 words
A CVD method for selectively depositing metal on a substrate according to claim 16, in which said reduction gas is H 2 , and said gas containing a metallic element as a constituent is one or more of WF 6 , MoF 6 , TaF 5 , CrF 4 , TiF 4 , TiCl 4 , MoCl 5 , WCl 6 , and AlCl 3 .
Claim 22
Dependent Claim
40 words
A CVD method for selectively depositing metal on a substrate according to claim 16, in which said insulating film is one or more of SiO 2 , Al 2 O 3 , BSG, PSG, BPSG (Oxides), BN (nitride) and oxynitride.
Claim 23
Dependent Claim
45 words
A CVD method for selectively depositing metal on a substrate according to claim 16, in which said first metallic film is one or more of W, Mo, Ta, Cr, Ti, Al, Pt, Pd, Au, Ni (metals) and alloys consisting of two or more of them.
Claim 24
Dependent Claim
27 words
A CVD method for selectively depositing metal on a substrate according to claim 16, in which said first metallic film is metal silicide or TiN (metal nitride).
Claim 25
Dependent Claim
36 words
A CVD method for selectively depositing metal on a substrate according to claim 16, in which said substrate of the wafer is made of Si, SiO 2 , Al 2 O 3 , glass or sapphire.
Claim 26
Dependent Claim
21 words
A CVD method for selectively depositing metal on a substrate according to claim 16, in which said wafer holder is rotated.
References Cited (Backward Citations)
US3404998A
Cited
US3424408A
Cited
US3794516A
Cited
US3697342A
Cited
US3697343A
Cited
US3826699A
Cited
US3900646A
Cited
US4469045A
Cited
US4215156A
Cited
US4191794A
Cited
US4401689A
Cited
US4404235A
Cited
US4430364A
Cited
US4349408A
Cited
US4435445A
Cited
US4565157A
Cited
US4650698A
Cited
US4504526A
Cited
US4629635A
Cited
US4741928A
Cited
US4849260A
Cited
US4800105A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-18 | 1994-08-20 | 1995-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-18 | 1998-08-20 | 1999-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-18 | 2002-08-20 | 2003-02-19 | $7700.00 | Window Closed / Lapsed |