US3794516A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making high temperature low ohmic contact to silicon
Assignee: Individual
•
Filing: 1971-12-17
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Granted: 1974-02-26
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Expires: 1991-12-17
Abstract
Abstract A HIGH TEMPERATURE LOW OHMIC ELECTRICAL CONTACT IS MADE TO A SILICON BODY BY FORMING A VERY THIN LAYER OF SILICON CARBIDE OVER THE SILICON BODY AND THEN FORMING A METALLIC LAYER, SUCH AS A REFRACTORY METAL, OVER THE SILICON CARBIDE TO FORM A HIGH QUALITY LOW OHMIC CONTACT TO THE SURFACE OF THE SILICON BODY.
Inventors
- 👤 W Engeler
- 👤 L Cordes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 01:47
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/50; H10W72/531; H10W72/5363
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-25 | 1977-08-27 | 1978-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-25 | 1981-08-27 | 1982-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-25 | 1985-08-27 | 1986-02-26 | $7700.00 | Window Closed / Lapsed |