Patent US4982269A successfully refreshed from Google Patents.
US4982269A
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Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof
Assignee: Thomson Hybrides et Microondes
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Filing: 1989-05-08
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Granted: 1991-01-01
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Expires: 2009-05-08
Abstract
Abstract A microwave integrated circuit having planar and mesa components and microstrip lines. To preserve a constant impedance for the microstrip lines, the mesa component is buried in a recess, which is then filled with a dielectric having substantially the same thermal expansion coefficient and the same dielectric constant as the insulating substrate. The surface of the mesa component and of the dielectric is in the plane of the planar part of the integrated circuit. Between the interconnecting microstrip lines on the planar face and the ground plane on the face of the substrate, the thickness and the dielectric constant of the material is constant.
Inventors
- 👤 Michel Calligaro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:25
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/60; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17; H10W74/00; H10W74/10; H10W74/131; H10W74/134; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
142 words
A microwave semiconductor device having an upper surface and a lower surface, said upper surface and said lower surface being essentially planar and parallel, comprising: a semiconductive substrate; at least one semiconductive mesa component in a part of said substrate, the top of said mesa forming part of said upper surface; at least one planar component formed in a part of said substrate which extends upwardly to form part of said upper surface; a dielectric material forming the remainder of said upper surface, said dielectric material having the same thermal expansion coefficient and a dielectric constant as said substrate; a passivation layer between said dielectric material and both the substrate and mesa components; a metallization layer below said substrate to form a ground plane on said lower surface; and microstrip lines on said upper surface connecting said mesa components and planar components.
Claim 2
Dependent Claim
142 words
A microwave semiconductor device having an upper surface and a lower surface, said upper surface and said lower surface being essentially planar and parallel, comprising: a semiconductive substrate; at least one semiconductive mesa component in a part of said substrate, the top of said mesa forming part of said upper surface; at least one planar component formed in a part of said substrate which extends upwardly to form part of said upper surface; a dielectric material forming the remainder of said upper surface, said dielectric material having the same thermal expansion coefficient and a dielectric constant as said substrate; a passivation layer between said dielectric material and both the substrate and mesa components; a metallization layer below said substrate to form a ground plane on said lower surface; and microstrip lines on said upper surface connecting said mesa components and planar components.
Claim 3
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein the material is an Al 2 O 3 +SiO 2 +ZnO glass in the case where the substrate is made of GaAs.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein the dielectric material extends from the substrate to the upper surface.
Claim 5
Dependent Claim
35 words
A semiconductor device according to claim 1 wherein, between said upper surface and said lower surface, the thickness and the dielectric constant of the device between the microstrip lines and said metallization layer is constant.
Claim 6
Dependent Claim
26 words
A semiconductor device according to claim 4, wherein the thickness of the substrate is chosen and adjusted to define a characteristic impedance for the microstrip lines.
References Cited (Backward Citations)
US4734749A
Cited
DE2216424A1
Cited
US4105810A
Cited
JPS5230185A
Cited
FR2330144A1
Cited
GB2003662A
Cited
US4219835A
Cited
US4298881A
Cited
JPS56158488A
Cited
FR2508706A1
Cited
JPS58161366A
Cited
GB2129213A
Cited
EP0109887A1
Cited
FR2538616A1
Cited
US4481707A
Cited
US4604591A
Cited
US4719498A
Cited
US4596070A
Cited
US4725561A
Cited
US4859633A
Cited
EP0197861A2
Cited
US4675984A
Cited
US4797715A
Cited
US4729006A
Cited
US4751561A
Cited
US4794093A
Cited
US4807022A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-31 | 1994-07-02 | 1995-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-31 | 1998-07-02 | 1999-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-31 | 2002-07-02 | 2003-01-01 | $7700.00 | Window Closed / Lapsed |