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US4596070A Expired / Lapsed US ⏱️ 0.0 years remaining

Interdigitated IMPATT devices

Assignee: Texas Instruments Inc
•
Filing: 1984-07-13
•
Granted: 1986-06-24
•
Expires: 2004-07-13
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Abstract

Abstract The disclosure relates to a semiconductor substrate having an active area for formation of an IMPATT device which is formed as a plurality of separated fingers having a common n+ region to spread the area over which the IMPATT is disposed and which provides such additional area for dissipation of heat through the substrate.

Inventors

  • 👤 Burhan Bayraktaroglu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 08:56
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D8/00; H10D8/40; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/075; Y10S148/135

Claims Analysis

Total Claims: 17
Claim 1
Independent Claim 116 words
A method of forming a monolithic semiconductor structure which comprises the steps of: (a) providing a semiconductor substrate having an active region on a portion of the surface thereof, said active region having a plurality of layers in the arrangement of an IMPATT deivce; (b) forming plural fingers, each finger including all of said layers of said active region with the bottommost layer of said active region common to all of said fingers; (c) electrically isolating said active region from other surface regions of said substrate; (d) placing an electrical insulator between said fingers; and (e) placing an electrical conductor over said electrical insulator in contact with the layer of said fingers remote from said substrate.
Claim 2
Independent Claim 116 words
A method of forming a monolithic semiconductor structure which comprises the steps of: (a) providing a semiconductor substrate having an active region on a portion of the surface thereof, said active region having a plurality of layers in the arrangement of an IMPATT deivce; (b) forming plural fingers, each finger including all of said layers of said active region with the bottommost layer of said active region common to all of said fingers; (c) electrically isolating said active region from other surface regions of said substrate; (d) placing an electrical insulator between said fingers; and (e) placing an electrical conductor over said electrical insulator in contact with the layer of said fingers remote from said substrate.
Claim 3
Dependent Claim 36 words
The method of claim 1 wherein step (b) comprises the steps of placing metallization on said active region at locations defining said fingers and then etching said active region with said metallization providing a masking function.
Claim 4
Dependent Claim 33 words
The method of claim 1 wherein step (c) comprises removing said active layer from regions around said IMPATT structure to electrically isolate said IMPATT structure from the remaining surface portions of said substrate.
Claim 5
Dependent Claim 33 words
The method of claim 2 wherein step (c) comprises removing said active layer from regions around said IMPATT structure to electrically isolate said IMPATT structure from the remaining surface portions of said substrate.
Claim 6
Dependent Claim 15 words
The method of claim 1 wherein in step (d), said electrical insulator is a polyimide.
Claim 7
Dependent Claim 15 words
The method cf claim 2 wherein in step (d), said electrical insulator is a polyimide.
Claim 8
Dependent Claim 15 words
The method of claim 3 wherein in step (d), said electrical insulator is a polyimide.
Claim 9
Dependent Claim 15 words
The method of claim 4 wherein in step (d), said electrical insulator is a polyimide.
Claim 10
Dependent Claim 28 words
The method of claim 1 further including forming electrical components on said substrate electrically isolated from said IMPATT device and connecting said electrical conductor to said electrical components.
Claim 11
Dependent Claim 28 words
The method of claim 2 further including forming electrical components on said substrate electrically isolated from said IMPATT device and connecting said electrical conductor to said electrical components.
Claim 12
Dependent Claim 28 words
The method of claim 3 further including forming electrical components on said substrate electrically isolated from said IMPATT device and connecting said electrical conductor to said electrical components.
Claim 13
Dependent Claim 28 words
The method of claim 4 further including forming electrical components on said substrate electrically isolated from said IMPATT device and connecting said electrical conductor to said electrical components.
Claim 14
Dependent Claim 28 words
The method of claim 5 further including forming electrical components on said substrate electrically isolated from said IMPATT device and connecting said electrical conductor to said electrical components.
Claim 15
Dependent Claim 28 words
The method of claim 6 further including forming electrical components on said substrate electrically isolated from said IMPATT device and connecting said electrical conductor to said electrical components.
Claim 16
Dependent Claim 28 words
The method of claim 7 further including forming electrical components on said substrate electrically isolated from said IMPATT device and connecting said electrical conductor to said electrical components.
Claim 17
Dependent Claim 28 words
The method of claim 8 further including forming electrical components on said substrate electrically isolated from said IMPATT device and connecting said electrical conductor to said electrical components.

References Cited (Backward Citations)

US3383760A Cited
US3427515A Cited
US4197551A Cited
US4278986A Cited
JPS5541727A Cited
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US4258375A Cited
US4319265A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-06-23 1989-12-23 1990-06-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-06-23 1993-12-23 1994-06-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-06-23 1997-12-23 1998-06-24 $7700.00 Window Closed / Lapsed

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