EP0197861A2
Expired / Lapsed
EP
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Microwave monolithic integrated circuit device
Assignee: Fujitsu Ltd
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Filing: 1986-04-03
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Granted: —
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Expires: 2006-04-03
Abstract
Abstract A microwave monolithic integrated circuit (MMIC) device comprises a transistor (E,B,C) and a capacitor (C3) which are respectively formed on the same semiconductor substrate (41). The transistor has at least one high resistivity semiconductor layer (42) which forms a heterojunction with the semiconductor substrate (41). The capacitor (C3) has a dielectric layer constituted by the high resistivity semiconductor layer (42) of the transistor. The transistor and the capacitor can be built by the same production processes.
Inventors
- 👤 Yasutake Hirachi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 22:37
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
69 words
A microwave monolithic integrated circuit device comprising a semiconductor substrate, a transistor and a capacitor formed on said substrate, and first and second electrodes constituting electrodes of said capacitor characterized in that, the transistor (S,G,D; E,B,C) has at least one high resistivity semiconductor layer (32,33;42) which forms heterojunction with said semiconductor substrate, and the capacitor (Cl,C2;C3) uses as a dielectric layer said high resistivity semiconductor layer of said transistor.
Claim 2
Dependent Claim
69 words
A microwave monolithic integrated circuit device comprising a semiconductor substrate, a transistor and a capacitor formed on said substrate, and first and second electrodes constituting electrodes of said capacitor characterized in that, the transistor (S,G,D; E,B,C) has at least one high resistivity semiconductor layer (32,33;42) which forms heterojunction with said semiconductor substrate, and the capacitor (Cl,C2;C3) uses as a dielectric layer said high resistivity semiconductor layer of said transistor.
Claim 3
Dependent Claim
39 words
A microwave monolithic integrated circuit device as claimed in claim 1 in which said semiconductor substrate (31,41) comprises a via-hole (21;48), said first electrode (36;49) being formed on a lower surface of said semiconductor substrate and within said via-hole.
Claim 4
Dependent Claim
88 words
A microwave monolithic integrated circuit device as claimed in claim 2 which further comprises an insulating separation region (38;53) surrounding a capacitor region in which said capacitor is formed, said insulating separation region having a high resistivity and being in contact with said first and second electrodes, said insulating separation region being formed by implanting oxygen ions or the like into each of a plurality of semiconductor layers (32-34; 43-46) formed on said semiconductor substrate including said high resistivity semiconductor layer (32,33; 42) and said semiconductor substrate (31;41).
Claim 5
Dependent Claim
24 words
A microwave monolithic integrated circuit device as claimed in claim 2 in which said second electrode (20;50) constitutes an electrode (D;B) of said transistor.
Claim 6
Dependent Claim
44 words
A microwave monolithic integrated circuit device as claimed in claim 3 in which said said electrode in said capacitor region is electrically coupled to said high resistivity semiconductor layer via one or a plurality of semiconductor layers formed on said high resistivity semiconductor layer.
Claim 7
Dependent Claim
36 words
A microwave monolithic integrated circuit device as claimed in claim 5 in which said one or plurality of semiconductor layers on said high resistivity semiconductor layer are commonly implanted with impurity ions in said capacitor region.
Claim 8
Dependent Claim
33 words
A microwave monolithic integrated circuit device as claimed in claim 1 in which said semiconductor substrate (31;41) is made of GaAs and said high resistivity semiconductor layer (32;42) is made of intrinisic AlGaAs.
Claim 9
Dependent Claim
82 words
A microwave monolithic integrated circuit device comprising a semiconductor substrate, a transistor and a capacitor formed on said substrate, and first and second electrodes constituting electrodes of said capacitor, characterized in that, the transistor (S,G,D; E,B,C) has at least one high resistivity semiconductor layer (32,33;42) which forms a heterojunction with an activating layer out of a plurality of semiconductor layers formed on said semiconductor substrate, and the capacitor (C1,C2;C3) uses as a dielectric layer said high resistivity semiconductor layer of said transistor.
Claim 10
Dependent Claim
82 words
A microwave monolithic integrated circuit device comprising a semiconductor substrate, a transistor and a capacitor formed on said substrate, and first and second electrodes constituting electrodes of said capacitor, characterized in that, the transistor (S,G,D; E,B,C) has at least one high resistivity semiconductor layer (32,33;42) which forms a heterojunction with an activating layer out of a plurality of semiconductor layers formed on said semiconductor substrate, and the capacitor (C1,C2;C3) uses as a dielectric layer said high resistivity semiconductor layer of said transistor.
Claim 11
Dependent Claim
55 words
A microwave monolithic integrated circuit device as claimed in claim 8 in which said transistor is a heterojunction bipolar transistor (E,B,C) comprising a spacer layer (42), a collector layer (44), a base layer (45) and an emitter layer (46) formed on the semiconductor substrate (41), said spacer layer being said high resistivity semiconductor layer (42).
Claim 12
Dependent Claim
58 words
A microwave monolithic integrated circuit device as claimed in claim 8 in which said transistor is a heterjunction field-effect transistor (S,G,D) comprising a spacer layer (32), a channel layer (33) and an electron supplying layer (34) formed on the semiconductor substrate (31), said spacer layer (32) and said channel layer (33) being said high resistivity semiconductor layer (32,33).
Claim 13
Dependent Claim
38 words
A microwave monolithic integrated circuit device as claimed in claim 8 in which said semiconductor substrate (31;43) comprises a via-hole (21;48),said first electrode (36,49) being formed on a lower surface of said semiconductor substrate and within said via-hole.
Claim 14
Dependent Claim
87 words
A microwave monolithic integrated circuit device as claimed in claim 11 which further comprises an insulating separation region (38;53) surrounding a capacitor region in which said capacitor is formed, said insulating separation region having a high resistivity and being in contact with said first and second electrodes, said insulating separation region being formed by implanting oxygen ions or the like into each of the plurality of semiconductor layers formed on said semiconductor substrate including said high resistivity semiconductor layer and said activating layer and said semiconductor substrate.
Claim 15
Dependent Claim
43 words
A microwave monolithic integrated circuit device as claimed in claim 12 in which said second electrode (20;50) in said capacitor region is electrically coupled to said high resistivity semiconductor layer via the plurality of semiconductor layers formed on said high resistivity semiconductor layer.
Claim 16
Dependent Claim
34 words
A microwave monolithic integrated circuit device as claimed in claim 11 in which said transistor is a heterjunction field-effect transistor (S,G,D), said second electrode (20) constituting a drain electrode (D) of said field-effect transistor.
Claim 17
Dependent Claim
31 words
A microwave monolithic integrated circuit device as claimed in claim 11in which said semiconductor substrate (31;41) is made of GaAs and said high resistivity semiconductor layer is made of intrinsic AlGaAs.
References Cited (Backward Citations)
No citation records indexed.
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