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US4897698A Expired / Lapsed US ⏱️ 0.0 years remaining

Horizontal structure thin film transistor

Assignee: Texas Instruments Inc
•
Filing: 1988-12-14
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Granted: 1990-01-30
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Expires: 2008-12-14
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Abstract

Abstract A horizontal structure transistor is fabricated in a shallow epitaxial island which is completely surrounded by an insulator, such as oxide. The transistor has base and emitter regions which are diffused into the island from the same mask so that the base width is controllable and remains constant with respect to the emitter. A polysilicon base contact rests on top of the island and is isolated from the emitter and collector regions by an oxide layer. The horizontal structure transistor can easily be fabricated to include complementary bipolar transistors and complementary IGFET devices on the same substrate.

Inventors

  • 👤 Eldon J. Zorinsky
  • 👤 David B. Spratt
  • 👤 James D. Guillory

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 17:05
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/041; H10D10/60; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D86/00; H10D86/01; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W10/011; H10W10/012; H10W10/13

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 283 words
A horizontal bipolar transistor structure, comprising: a substrate; an insulating layer covering one surface of said substrate: an island of epitaxial silicon of a first conductivity type located in said insulating layer and having an upper surface substantially coplanar with a surface of said insulating layer away from said substrate and a lower surface substantially parallel thereto and spaced toward said substrate, wherein said island is surrounded on all sides and below the lower surface by said insulating layer; a first highly doped region of the first conductivity type disposed within said island along a first side thereof, and filling the island between the upper surface and the lower surface: a second highly doped region of the first conductivity type disposed within said island along a second side thereof, wherein the second side is opposite the first side, and wherein the second side fills said island between the upper and lower surfaces; and a third region of a second conductivity type disposed adjacent said first doped region and filling the island between the upper and lower surfaces, said third region having an essentially constant width between said first and second regions and having a doping profile with a largest concentration in a direction toward the first region and a lower concentration in a direction toward the second region: insulation means contacting a portion of said first and second regions and a portion of said third region, having a window therein over said third region, whereby direct electrical contact can be made to said third region through said window; and means overlying said third region and a portion of said insulation means for establishing direct electrical contact to said third region through said window.
Claim 2
Dependent Claim 283 words
A horizontal bipolar transistor structure, comprising: a substrate; an insulating layer covering one surface of said substrate: an island of epitaxial silicon of a first conductivity type located in said insulating layer and having an upper surface substantially coplanar with a surface of said insulating layer away from said substrate and a lower surface substantially parallel thereto and spaced toward said substrate, wherein said island is surrounded on all sides and below the lower surface by said insulating layer; a first highly doped region of the first conductivity type disposed within said island along a first side thereof, and filling the island between the upper surface and the lower surface: a second highly doped region of the first conductivity type disposed within said island along a second side thereof, wherein the second side is opposite the first side, and wherein the second side fills said island between the upper and lower surfaces; and a third region of a second conductivity type disposed adjacent said first doped region and filling the island between the upper and lower surfaces, said third region having an essentially constant width between said first and second regions and having a doping profile with a largest concentration in a direction toward the first region and a lower concentration in a direction toward the second region: insulation means contacting a portion of said first and second regions and a portion of said third region, having a window therein over said third region, whereby direct electrical contact can be made to said third region through said window; and means overlying said third region and a portion of said insulation means for establishing direct electrical contact to said third region through said window.
Claim 3
Dependent Claim 62 words
The horizontal bipolar transistor structure of claim 1 further comprising: a first conductive contact directly electrically connected to said first region at the upper island surface; and a second conductive contact directly electrically connected to said second region at the upper island surface; and wherein said third conductive contact is directly electrically connected to said third region at the upper island surface.
Claim 4
Dependent Claim 265 words
A horizontal bipolar transistor structure, comprising: a substrate: an insulating layer covering one surface of said substrate and having a top surface; an island of epitaxial silicon of a first conductivity type located on said insulating layer top surface and having a lower surface in contact therewith, and an upper surface substantially parallel thereto and spaced away from said insulating layer: a first highly doped region of the first conductivity type disposed within said island along a first side thereof, and filling the island between the upper surface and the lower surface; a second highly doped region of the first conductivity type disposed within said island along a second side thereof, wherein the second side is opposite the first side, and wherein the second side fills said island between the upper and lower surfaces; and a third region of a second conductivity type disposed adjacent said first doped region and filling the island between the upper and lower surfaces, said third region having an essentially constant width between said first and second regions; and having a doping profile with a largest concentration in a direction toward the first region and a lower concentration in a direction toward the second region; insulation means contacting a portion of said first and second regions and a portion of said third region, having a window therein over said third region, whereby direct electrical contact can be made to said third region through said window; and means overlying said third region and a portion of said insulation means for establishing direct electrical contact to said third region through said window.
Claim 5
Dependent Claim 265 words
A horizontal bipolar transistor structure, comprising: a substrate: an insulating layer covering one surface of said substrate and having a top surface; an island of epitaxial silicon of a first conductivity type located on said insulating layer top surface and having a lower surface in contact therewith, and an upper surface substantially parallel thereto and spaced away from said insulating layer: a first highly doped region of the first conductivity type disposed within said island along a first side thereof, and filling the island between the upper surface and the lower surface; a second highly doped region of the first conductivity type disposed within said island along a second side thereof, wherein the second side is opposite the first side, and wherein the second side fills said island between the upper and lower surfaces; and a third region of a second conductivity type disposed adjacent said first doped region and filling the island between the upper and lower surfaces, said third region having an essentially constant width between said first and second regions; and having a doping profile with a largest concentration in a direction toward the first region and a lower concentration in a direction toward the second region; insulation means contacting a portion of said first and second regions and a portion of said third region, having a window therein over said third region, whereby direct electrical contact can be made to said third region through said window; and means overlying said third region and a portion of said insulation means for establishing direct electrical contact to said third region through said window.
Claim 6
Dependent Claim 61 words
The horizontal bipolar structure of claim 3 further comprising: a first conductive contact directly electrically connected to said first region at the upper island surface; and a second conductive contact directly electrically connected to said second region at the upper island surface; and wherein said third conductive contact is directly electrically connected to said third region at the upper island surface.
Claim 7
Dependent Claim 154 words
A horizontal bipolar transistor, comprising: an isolated island of epitaxial silicon, including: first and second highly doped regions of a first conductivity type on opposite sides of said said island: a third region of a second conductivity type between and adjacent said first and second highly doped regions, said third region having an essentially constant width between said first and second regions; and having a doping profile with a largest concentration in a direction toward the first region and a lower concentration in a direction toward the second region: insulation means contacting a portion of said first and second regions and a portion of said third region, having a window therein over said third region, whereby direct electrical contact can be made to said third region through said window; and means overlying said third region and a portion of said insulating means for establishing direct electrical contact to said third region through said window.
Claim 8
Dependent Claim 154 words
A horizontal bipolar transistor, comprising: an isolated island of epitaxial silicon, including: first and second highly doped regions of a first conductivity type on opposite sides of said said island: a third region of a second conductivity type between and adjacent said first and second highly doped regions, said third region having an essentially constant width between said first and second regions; and having a doping profile with a largest concentration in a direction toward the first region and a lower concentration in a direction toward the second region: insulation means contacting a portion of said first and second regions and a portion of said third region, having a window therein over said third region, whereby direct electrical contact can be made to said third region through said window; and means overlying said third region and a portion of said insulating means for establishing direct electrical contact to said third region through said window.
Claim 9
Dependent Claim 38 words
The horizontal bipolar transistor of claim 5 wherein said isolated of epitaxial silicon comprises a layer of insulating material and a region of epitaxial silicon in and surrounded on sides and bottom by said layer of insulating material.
Claim 10
Dependent Claim 32 words
The horizontal bipolar transistor of claim 5 wherein said isolated island of epitaxial silicon comprises a layer of insulating material and a region of epitaxial silicon upon said layer of insulating material.

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-01-29 1993-07-31 1994-01-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-01-29 1997-07-31 1998-01-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-01-29 2001-07-31 2002-01-30 $7700.00 Window Closed / Lapsed

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