Modulation doped high electron mobility transistor with n-i-p-i structure

Claim 2

A modulation-doped field effect transistor including a first semiconductor layer being substantially undoped, a second semiconductor layer of a first conductivity type, formed over said first semiconductor layer, and gate electrode means formed over said second semiconductor layer for controlling conduction through a conduction channel formed in said first semiconductor layer, comprising: a third semiconductor layer of said first conductivity type; and a fourth semiconductor layer of a second conductivity type formed next to said third semiconductor layer, said third and fourth semiconductor layers having respective ends on one side thereof abutting said first semiconductor layer for locally modulating conductivity in said first semiconductor layer in a pattern corresponding to said respective ends.

Claim 3

A modulation-doped field effect transistor according to claim 1 wherein said first semiconductor layer is gallium arsenide (GaAs), and said second, third, and fourth layers are aluminum gallium arsenide (AlGaAs).

Claim 4

A modulation-doped field effect transistor according to claim 2 wherein said first conductivity type is n and said second conductivity type is p.

Claim 5

A modulation-doped field effect transistor according to claim 3 including a fifth layer of a semi-insulating semiconductor, said third and fourth semiconductor layers having respective ends on the other side thereof abutting said fifth semiconductor layer.

Claim 6

A modulation-doped field effect transistor according to claim 4 wherein said third and fourth semiconductor layers form part of a plurality of semiconductor layers of AlGaAs in a sandwich structure of p and n conductivity type semiconductor layers in alternating occurrence, said plurality of layers having respective ends on said one side abutting said first semiconductor layer and having respective ends on said other side abutting said fifth semiconductor layer.

Claim 7

A modulation-doped field effect transistor according to claim 5 wherein a sixth semiconductor layer of substantially undoped AlGaAs is interposed between said first and second semiconductor layers, said sixth semiconductor layer being relatively thin compared with said first and second semiconductor layers.

Claim 8

A modulation-doped field effect transistor according to claim 5, wherein a semiconductor layer of AlGaAs of substantially intrinsic conductivity is interposed between each one of said plurality of semiconductor layers and the next layer, such that a repeating pattern of conductivities is formed in said sandwich structure of n-conductivity, intrinsic-conductivity, p-conductivity, and intrinsic-conductivity semiconductor layers.

Claim 9

A modulation-doped field effect transistor according to claim 6 wherein a semiconductor layer of AlGaAs of substantially intrinsic conductivity is interposed between each one of said plurality of semiconductor layers and the next, such that a repeating pattern of conductivities is formed in said sandwich structure of n-conductivity, intrinsic-conductivity, p-conductivity, and intrinsic-conductivity semiconductor layers.

Claim 10

A modulation-doped field effect transistor comprising: a first-semiconductor layer being substantially undoped; a second semiconductor layer of a first conductivity type, formed over said first layer; gate electrode means formed over said second semiconductor layer for controlling conduction through a conduction channel formed in said first semiconductor layer, said conduction channel forming a main controllable conduction path of said transistor; and a plurality of semiconductor layers of said first conductivity type and a second conductivity type, in a layered structure with said layers of said first and second conductivity types alternating, said plurality of semiconductor layers having respective ends on one side thereof abutting said first semiconductor layer such that said plurality of semiconductor layers on the one hand and said first and second layers on the other hand are in substantially mutually perpendicular planes with said first and second conductivity types in said plurality of semiconductor layers alternating progressively along a length direction of said conduction channel for modulating conductivity in said first semiconductor layer in correspondence with such respective ends, said layers in said plurality being of sufficient thickness to substantially prevent conduction through said plurality of semiconductor layers in a direction perpendicular to the planes of said plurality of semiconductor layers.

Claim 11

A modulation-doped field effect transistor comprising: a first-semiconductor layer being substantially undoped; a second semiconductor layer of a first conductivity type, formed over said first layer; gate electrode means formed over said second semiconductor layer for controlling conduction through a conduction channel formed in said first semiconductor layer, said conduction channel forming a main controllable conduction path of said transistor; and a plurality of semiconductor layers of said first conductivity type and a second conductivity type, in a layered structure with said layers of said first and second conductivity types alternating, said plurality of semiconductor layers having respective ends on one side thereof abutting said first semiconductor layer such that said plurality of semiconductor layers on the one hand and said first and second layers on the other hand are in substantially mutually perpendicular planes with said first and second conductivity types in said plurality of semiconductor layers alternating progressively along a length direction of said conduction channel for modulating conductivity in said first semiconductor layer in correspondence with such respective ends, said layers in said plurality being of sufficient thickness to substantially prevent conduction through said plurality of semiconductor layers in a direction perpendicular to the planes of said plurality of semiconductor layers.

Claim 12

A modulation-doped field effect transistor according to claim 9 including a third semiconductor layer, being substantially undoped and being interposed between said first and second layers.

Claim 13

A modulation-doped field effect transistor according to claim 10 including a fourth semiconductor layer of semi-insulating conductivity, said plurality of semiconductor layers having respective ends thereof, on a side thereof opposite said one side thereof, abutting said fourth semiconductor layer.

Claim 14

A modulation-doped field effect transistor according to claim 10 wherein said first semiconductor layer is gallium arsenide, said second, third, and fourth semiconductor layers are aluminum gallium arsenide.

Claim 15

A modulation-doped field effect transistor according to claim 10 wherein said third semiconductor layer is thin compared with said first and second semiconductor layers.

Claim 16

A modulation-doped field effect transistor comprising: a first semiconductor layer being substantially undoped; means on one side of said first semiconductor layer for supplying charge carriers into a first region of said first semiconductor layer adjacent said one side of said semiconductor layer; means for locally modulating hole and electron concentrations in a second region of said first semiconductor layer adjacent another side thereof in a repeating pattern of alternations so as to substantially inhibit conduction therethrough in the direction of said alternations; and gate means for shifting said charge carriers between said first and second regions.

Claim 17

A modulation-doped field effect transistor comprising: a first semiconductor layer being substantially undoped; means on one side of said first semiconductor layer for supplying charge carriers into a first region of said first semiconductor layer adjacent said one side of said semiconductor layer; means for locally modulating hole and electron concentrations in a second region of said first semiconductor layer adjacent another side thereof in a repeating pattern of alternations so as to substantially inhibit conduction therethrough in the direction of said alternations; and gate means for shifting said charge carriers between said first and second regions.

Claim 18

A modulation-doped field effect transistor according to claim 14 wherein said means for locally modulating doping comprises alternating p and n doped semiconductor regions adjacent said second region.

Claim 19

A modulation-doped field effect transistor according to claim 14 wherein said means for supplying charge carriers comprises a second semiconductor layer adjacent said first region.

Claim 20

A modulation-doped field effect transistor according to claim 14 wherein said first semiconductor layer is gallium arsenide and said second semiconductor layer is aluminum gallium arsenide.

Claim 21

A modulation-doped field effect transistor according to claim 17 wherein said first and second semiconductor layers are separated by a third semiconductor layer of aluminum gallium arsenide, said third semiconductor layer being thin compared with said first and second semiconductor layers.

Claim 22

A modulation-doped field effect transistor according to claim 15 wherein said alternating p and n doped semiconductor regions are formed in respective layers of aluminum gallium arsenide.