EP0091831A2
Expired / Lapsed
EP
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Mobility-modulation field effect transistor
Assignee: Individual
•
Filing: 1983-04-13
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Granted: —
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Expires: 2003-04-13
Abstract
Abstract A field effect transistor includes a conduction channel, the charge carrier mobility of which is modulated by applying a signal voltage to gate electrodes (2, 7). Typically the conduction channel includes more than one region (10, 11) each of different charge carrier mobility and the potential applied to the gate electrodes affects the charge carrier distribution between the two regions (10,11). This eliminates the limit in the response speed of the field effect transistor which is dependent upon the channel transit time of the carriers. A mobility modulation field effect transistor thereby increases the response speed of the field effect transistor considerably.
Inventors
- 👤 Hiroyuki Sakaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 22:38
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/801; H10D30/204; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D64/00; H10D64/60; H10D64/602
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
58 words
A field effect transistor having a source (8) and a drain (9) with a conduction channel for carrying charge carriers extending between them, and at least one gate electrode (2, 7), characterised in that changes in the electrical potential applied to the gate electrode (2, 7) change the mobility of charge carriers in the conduction channel (10, 11).
Claim 2
Dependent Claim
58 words
A field effect transistor having a source (8) and a drain (9) with a conduction channel for carrying charge carriers extending between them, and at least one gate electrode (2, 7), characterised in that changes in the electrical potential applied to the gate electrode (2, 7) change the mobility of charge carriers in the conduction channel (10, 11).
Claim 3
Dependent Claim
54 words
A field effect transistor according to claim 1, in which the conduction channel (10, 11) is formed by two or more separate regions (4, 5) having different carrier mobilities, and in which changes in electrical potential applied to the at least one gate electrode (2, 7) move charge carriers from one region to another.
Claim 4
Dependent Claim
46 words
A field effect transistor according to claim 1 or claim 2, in which the two regions are different layers of material (4, 5) located one above the other and with gate electrodes (2, 7) insulated from and located above and below the layers of material (4,5).
Claim 5
Dependent Claim
26 words
A field effect transistor, characterised in that the mobility of charge carriers for electrical conduction in a semiconductor is controlled by a voltage applied from outside.
Claim 6
Dependent Claim
26 words
A field effect transistor, characterised in that the mobility of charge carriers for electrical conduction in a semiconductor is controlled by a voltage applied from outside.
Claim 7
Dependent Claim
68 words
A field effect'transistor according to claim 4, characterised in that it includes a plurality of conducting channels (10,11) formed by a multilayer structure (4, 5) of a plurality of semiconductor layers having different carrier mobilities,the mobility of the carriers in the plurality of channels (10, 11) being controlled by external voltages applied to one or more gate electrodes (2, 7) disposed outside the plurality of channels (10, 11).
Claim 8
Dependent Claim
36 words
A field effect transistor according to claim 5, in which the plurality of channels (10, 11) are composed of a plurality of semiconductor layers (4, 5) having different carrier mobilities due to their different impurity content.
Claim 9
Dependent Claim
35 words
A field effect transistor according to claim 5, in which the plurality of channels (10, 11) are composed of a plurality of semiconductor layers (4, 5) formed of different semiconductor materials having different carrier mobilities.
Claim 10
Dependent Claim
47 words
A field effect transistor according to any one of the preceding claims, in which an impurity capable of capturing and localising charge carriers is introduced into one of the plurality of regions or channels to make the charge carrier mobility of the one region or channel zero.
Claim 11
Dependent Claim
76 words
A field effect transistor according to claim 1 or claim 4, in which the conduction channel of the field effect transistor is formed by a semiconductor having a plurality of valleys of conductor bands which have a different charge carrier mobility from one another, and the charge carrier mobility of the conduction channel is controlled by causing electron transition between the valleys by the action of external voltages applied to gate electrode or electrodes (2, 7).
Claim 12
Dependent Claim
61 words
A field effect transistor according to claim 1 or claim 4, in which the charge carriers are captured in a direction perpendicular to the conduction channels of the field effect transistor into a standing wave, and the charge carrier mobility is controlled by changing the form of the standing wave by applying a voltage to gate electrode or electrodes (2, 7).
References Cited (Backward Citations)
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