EP0133342A1
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EP
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A superlattice type semiconductor structure having a high carrier density
Assignee: NEC Corp
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Filing: 1984-06-25
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Granted: —
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Expires: 2004-06-25
Abstract
Abstract The superlattice type semiconductor material has a multilayered structure on a substrate (1), e.g. GaAs, and comprising first layers (4) of a semiconductor which alone contains impurities and has a thickness less than the electron or hole wavelength, alternating with second layers (5) of a semiconductor or insulator having such a thickness that electrons or holes may penetrate by tunneling. Electrons or holes distribute uniformly over the whole of the multilayered structure which behaves like a uniform semiconductor material. However, the carrier density may be made very high. Various examples of materials for the first and second layers (4, 5) and dopants for the first layers are disclosed. The individual layers may themselves be composite.
Inventors
- 👤 Toshio C/O Nec Corporation Baba
- 👤 Masaki C/O Nec Corporation Ogawa
- 👤 Takashi C/O Nec Corporation Mizutani
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 18:15
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/4755; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/34; H10D10/00; H10D10/80; H10D10/821; H10D10/881; H10D30/472; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/161; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/1465; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; H10P; H10P14/00; H10P14/60; H01S5/343; H01S5/34313; H01S5/3432; H01S5/347; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/065; Y10S148/072; Y10S148/16
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
88 words
A multilayered structure of alternately piled first and second layers, said first layer being formed of a first material having a thickness of carrier wavelength, said first material being a first semiconductor and containing an impurity, said carrier being a minority carrier in said first semiconductor, said impurity being exclusively doped into said first semiconductor, said second layer being formed of a second material having such a thickness that said carrier may penetrate therethrough by tunneling effect, and said second material being a second semiconductor or an insulator.
Claim 2
Dependent Claim
88 words
A multilayered structure of alternately piled first and second layers, said first layer being formed of a first material having a thickness of carrier wavelength, said first material being a first semiconductor and containing an impurity, said carrier being a minority carrier in said first semiconductor, said impurity being exclusively doped into said first semiconductor, said second layer being formed of a second material having such a thickness that said carrier may penetrate therethrough by tunneling effect, and said second material being a second semiconductor or an insulator.
Claim 3
Dependent Claim
24 words
A multilayered structure as claimed in Claim 1, wherein said first semiconductor has no element by which lattice defects increase when impurity is doped.
Claim 4
Dependent Claim
33 words
A multilayered structure as claimed in Claim 1, wherein said impurity doped into said first semiconductor is an N-type impurity and said second material has an electron affinity smaller than said first semiconductor.
Claim 5
Dependent Claim
53 words
A multilayered structure as claimed in Claim 3, wherein the numbers of said first and second layers are respectively plural, each of said first layers has a o 0 thickness within a range from 5A to 100A and each of said second layers has a thickness within a range from 5A to 100A.
Claim 6
Dependent Claim
41 words
A multilayered structure as claimed in Claim 4, wherein said first semiconductor does not involve aluminum, a combination of arsenic and phosphorus, a combination of arsenic and antimory and a combination of silicon and germanium as elements of said first semiconductor.
Claim 7
Dependent Claim
31 words
A multilayered structure as claimed in Claim 4, wherein said first semiconductor is a semiconductor selected from a group of GaAs, GaP, InP, GaSb, InAs, ZnSe, CdSe, CdTe, Si and Ge.
Claim 8
Dependent Claim
50 words
A multilayered structure as claimed in Claim 4, wherein said second material is a material selected from a group of AlAs, A1P, InAs, AlSb, GaP, GaAs, InGaAs, GaAsSb, GaAlAs, AlAsSb, InGaP, GaPSb, ZnS, ZnTe, HgTe, ZnSe, Ge, C, CaF2, BaF2, BaCaF 2 and Mg0 - A1 2 0 3 spinels.
Claim 9
Dependent Claim
47 words
A multilayered structure as claimed in Claim 6, wherein said second material is a material selected from a group of AlAs, AlP, InAs, AlSb, GaP, GaAs, InGaAs, GaAsSb, GaAlAs, AlAsSb, InGaP, GaPSb, ZnS, ZnTe, HgTe, ZnSe, Ge, C, CaF2, BaF2, BaCaF2 and MgO-Al 2 0 3 spinels.
Claim 10
Dependent Claim
46 words
A multilayered structure as claimed in Claim 1, wherein said impurity doped into said first semiconductor is P-type impurities and said second material having a sum of electron affinity and band gap larger than the sum of electron affinity and band gap of said first semiconductor.
Claim 11
Dependent Claim
43 words
A multilayered structure as claimed in Claim 9, wherein the numbers of said first and second layers are respectively plural, each of said first layers and each of said second layers have a thickness within a range 0 0 from 5A to 20A.
Claim 12
Dependent Claim
20 words
A multilayered structure as claimed in Claim 10, wherein said first semiconductor has a band gap narrower than 2.0 eV.
Claim 13
Dependent Claim
63 words
A superlattice type semiconductor material having a multilayered structure of a first layers of semiconductor having a thickness thinner than an electron wavelength and containing an N-type impurity, and a second layers of material having such a thickness that electrons may penetrate therethrough by tunneling effect and having an electron affinity smaller than said semiconductor, said first and second layers being alternately piled.
Claim 14
Dependent Claim
63 words
A superlattice type semiconductor material having a multilayered structure of a first layers of semiconductor having a thickness thinner than an electron wavelength and containing an N-type impurity, and a second layers of material having such a thickness that electrons may penetrate therethrough by tunneling effect and having an electron affinity smaller than said semiconductor, said first and second layers being alternately piled.
Claim 15
Dependent Claim
31 words
A superlattice type semiconductor material as claimed in Claim 12, wherein each of said first layers and said 0 second layers has a thickness thicker than 5A but thinner than 100A.
Claim 16
Dependent Claim
41 words
A superlattice type semiconductor material as claimed in Claim 12, wherein said semiconductor does not involve aluminum, a combination of arsenic and phosphorus, a combination of arsenic and antimony and a combination of silicon and germanium as elements of said semiconductor.
Claim 17
Dependent Claim
20 words
A superlattice type semiconductor material as claimed in Claim 12, wherein said semiconductor is GaAs and said material is AlAs.
Claim 18
Dependent Claim
74 words
A superlattice type semiconductor material having a multilayered structure of first layers of semiconductor having a thickness thinner than a hole wavelength and containing P-type impurities, and second layers of material having a sum of electron affinity and band gap larger than the sum of electron affinity and band gap of said semiconductor and having such a thickness that holes may penetrate therethrough by tunneling effect, said first and second layers being alternately piled.
Claim 19
Dependent Claim
74 words
A superlattice type semiconductor material having a multilayered structure of first layers of semiconductor having a thickness thinner than a hole wavelength and containing P-type impurities, and second layers of material having a sum of electron affinity and band gap larger than the sum of electron affinity and band gap of said semiconductor and having such a thickness that holes may penetrate therethrough by tunneling effect, said first and second layers being alternately piled.
Claim 20
Dependent Claim
28 words
A superlattice type semiconductor material as claimed in Claim 16, wherein each of said first and second layers has a thickness thicker than 5A but thinner than 20A.
Claim 21
Dependent Claim
21 words
A superlattice type semiconductor material as claimed in Claim 16, wherein said semiconductor has a band gap smaller than 2.0 eV.
Claim 22
Dependent Claim
15 words
A superlattice type semiconductor material as claimed in Claim 16, wherein said material is insulator.
References Cited (Backward Citations)
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