EP0029481A1
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EP
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Field effect semiconductor structure
Assignee: International Business Machines Corp
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Filing: 1980-07-18
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Granted: —
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Expires: 2000-07-18
Abstract
Abstract A metal semiconductor field effect transistor (MESFET) is provided with a laminated channel (8) consisting of alternating layers (9, 10) of two semiconductors, one having a narrow energy gap and light doping and the other having a wide energy gap and heavy doping. GaAs and GaAIAs, respectively, can be used for the alternating layers (9, 10).
Inventors
- 👤 Leroy Li-Gong Chang
- 👤 Leo Esaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 12:31
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
48 words
A field effect semiconductor device with a Schottky barrier gate positioned on the surface of a channel (8) in a semiconductor body between a source and a drain electrode (4,5), characterized in that said channel (8) comprises a plurality of semiconductor layers (9,10) of differing energy band gaps.
Claim 2
Dependent Claim
48 words
A field effect semiconductor device with a Schottky barrier gate positioned on the surface of a channel (8) in a semiconductor body between a source and a drain electrode (4,5), characterized in that said channel (8) comprises a plurality of semiconductor layers (9,10) of differing energy band gaps.
Claim 3
Dependent Claim
22 words
The field effect semiconductor device of claim 1, wherein said channel (8) comprises alternating narrow and wide energy band gap layers (9,10).
Claim 4
Dependent Claim
38 words
The field effect semiconductor device of claim 2, wherein said wide energy gap layer (10) is heavily doped and serves as a barrier, whereas said narrow energy gap layer (9) is more lightly doped and serves for conduction.
Claim 5
Dependent Claim
29 words
The field effect semiconductor device of claim 3, wherein said narrow energy gap layer (9) is gallium arsenide and said wide energy gap layer (10) is gallium aluminum arsenide.
Claim 6
Dependent Claim
52 words
The field effect semiconductor device of claim 4, wherein said narrow energy gap layer (9) is doped to a concentration of about 10 14 atoms per cm 3 , and said wide emergy gap layer (10) is doped to a concen- . tration of more than 10 atoms per cm 3 .
Claim 7
Dependent Claim
28 words
The field effect semiconductor device of claim 3, wherein said plurality of semiconductor layers (9,10) extend between a source and a drain region (2,3) in said semiconductor body.
Claim 8
Dependent Claim
20 words
The field effect semiconductor device of claim 6, wherein each of said semiconductor layers (9,10) is of substantially uniform thickness.
Claim 9
Dependent Claim
17 words
The field effect semiconductor device of claim 7, wherein said thickness is of the order of 100Å.
Claim 10
Dependent Claim
20 words
The field effect semiconductor device of claim 4, wherein the substrate (1) of said semiconductor body is semi-insulating gallium arsenide.
References Cited (Backward Citations)
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