EP0051271A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Heterojunction semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1981-10-28
•
Granted: —
•
Expires: 2001-10-28
Abstract
Abstract The semiconductor device of this invention consists at least of a laminate of a semi-insulating or p-type first semiconductor layer (15) having a forbidden band width E g1 , an undoped or p--type second semiconductor layer (2) having a forbidden band width Eg 2 and n-type third semiconductor layer (4) having a forbidden band width E g3 . The laminate is deposited on a predetermined semiconductor substrate (1) and the forbidden band widths have the relation E g2 <E g1 , E g3 . A pair of electrodes (5, 7) are so formed as to come into contact at least with the interface between the second and third semiconductor layers (2, 4), and a control electrode (6), which forms a Shottky junction with the third semiconductor layer (4), is formed at a predetermined position interposed between the pair of electrodes (5,7). The semiconductor device has excellent pinch-off characteristics.
Inventors
- 👤 Tadashi Fukuzawa
- 👤 Ken Yamaguchi
- 👤 Susumu Takahashi
- 👤 Hisao Nakajima
- 👤 Michiharu Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 18:42
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
135 words
A semiconductor device including at least a narrow bandgap semiconductor layer (2) and first and second wide bandgap semiconductor layers (15,'4) wherein: two interfaces between said narrow bandgap semiconductor layer (2) and said first and second wide bandgap semiconductor layers (15, 4) form heterojunctions, respectively; said narrow bandgap semiconductor layer (2) is a layer containing substantially no impurities; said wide bandgap semiconductor layer (15, 4) each are layers for feeding carriers into said narrow bandgap semiconductor layer (2); a pair of electrodes (5, 7) are disposed on said heterojunctions between said second wide bandgap semiconductor layer (4) and said narrow bandgap semiconductor layer (2); and an electrode (6) for controlling the carriers is disposed at a predeter- minded position on said second wide bandgap semiconductor layer (4) interposed between said pair of electrodes (5, 7).
Claim 2
Dependent Claim
135 words
A semiconductor device including at least a narrow bandgap semiconductor layer (2) and first and second wide bandgap semiconductor layers (15,'4) wherein: two interfaces between said narrow bandgap semiconductor layer (2) and said first and second wide bandgap semiconductor layers (15, 4) form heterojunctions, respectively; said narrow bandgap semiconductor layer (2) is a layer containing substantially no impurities; said wide bandgap semiconductor layer (15, 4) each are layers for feeding carriers into said narrow bandgap semiconductor layer (2); a pair of electrodes (5, 7) are disposed on said heterojunctions between said second wide bandgap semiconductor layer (4) and said narrow bandgap semiconductor layer (2); and an electrode (6) for controlling the carriers is disposed at a predeter- minded position on said second wide bandgap semiconductor layer (4) interposed between said pair of electrodes (5, 7).
Claim 3
Dependent Claim
55 words
The semiconductor device as defined in claim 1, wherein a further wide bandgap semiconductor layer containing substantially no impurities is disposed at the interface between said second wide bandgap semiconductor layer (4) and said narrow bandgap semiconductor layer (2), which further wide bandgap semiconductor layer forms a heterojunction together with said narrow bandgap semiconductor (12).
Claim 4
Dependent Claim
49 words
The semiconductor device as defined in claim 1 or 2 wherein said first wide bandgap semiconductor layer (15) has a semi-insulating property or p-type conductivity; said second wide bandgap semiconductor layer (4) has n-type conductivity; and said narrow bandgap semiconductor layer (2) is undoped or has p -type conductivity.
Claim 5
Dependent Claim
34 words
The semiconductor device as defined in any of claims 1 through 3 wherein said wide bandgap semiconductor layers (15, 4) consist of GaAtAs and said narrow bandgap semi- conductor layer (2) consists of GaAs.
Claim 6
Dependent Claim
34 words
The semiconductor device as defined in any of claims 1 through 3 wherein said wide bandgap semiconductor layer (15, 4) consist of InAtAs and said narrow bandgap semi- conductor layer (2) consists of InGaAs.
Claim 7
Dependent Claim
97 words
The semiconductor device as defined in any of claims 1 through 5 wherein a plurality of narrow bandgap semiconductor layers (17, 19, 21) containing substantially no impurities and a plurality of wide bandgap semiconductor layers (18, 20) are formed alternatingly upon each other; the the thus formed multi-layer structure is disposed on a substrate (1); and said pair of electrodes (5, 7) are disposed on implantation regions (23) extending through said multi-layer structure and reaching said substrate (1) for contacting the heterojunctions existing at the surfaces of each of said narrow bandgap semiconductor layers (17, 19, 21).
Claim 8
Dependent Claim
27 words
The semiconductor device as defined in claim 6 wherein a potential barrier layer (22) is disposed between said multi-layer structure (17 ... 21) and said substrate (1).
References Cited (Backward Citations)
GB2012480A
Cited
US4194935A
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.