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US4772489A
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Method of annealing a compound semiconductor substrate
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1986-09-19
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Granted: 1988-09-20
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Expires: 2006-09-19
Abstract
Abstract An annealing method for activating ion-implanted layers of a compound semiconductor substrate which comprises a step of converting gas containing prescribed components into plasma through an electron cyclotron resonance process and making the same read with a reactive gas to deposit reaction products onto the surface of the compound semiconductor substrate having the ion-implanted layers thereby forming a protective film; and a step of performing heat treatment for activating the ion-implanted layers. The gas converted into plasma through the electron cyclotron resonance process is N2, O2, NH3 or a gas mixture thereof, preferably NH3.
Inventors
- 👤 Shinichi Shikata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P95/00; H10P95/90; H10P95/904
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
82 words
A method of annealing a compound semiconductor substrate having ion-implanted layers to serve as active layers in predetermined regions on its surface, said method comprising the steps of converting ammonia (NH 3 ) gas into a nitrogen (N 2 ) plasma through an electron cyclotron resonance process, reacting said nitrogen (N 2 ) plasma with a reactive gas to deposit reaction products onto said compound semiconductor substrate thereby forming a protective film; and performing a heat treatment for activating said ion-implanted layers.
Claim 2
Independent Claim
82 words
A method of annealing a compound semiconductor substrate having ion-implanted layers to serve as active layers in predetermined regions on its surface, said method comprising the steps of converting ammonia (NH 3 ) gas into a nitrogen (N 2 ) plasma through an electron cyclotron resonance process, reacting said nitrogen (N 2 ) plasma with a reactive gas to deposit reaction products onto said compound semiconductor substrate thereby forming a protective film; and performing a heat treatment for activating said ion-implanted layers.
Claim 3
Dependent Claim
30 words
The method of annealing a compound semiconductor substrate in accordance with claim 1, wherein said protective film is formed to a thickness in the range of 1000 to 2000 Å.
Claim 4
Dependent Claim
33 words
The method of annealing a compound semiconductor substrate in accordance with claim 1, wherein said protective film is formed of a member selected from a group consisting of silicon nitride and silicon oxynitride.
Claim 5
Dependent Claim
23 words
The method of annealng a compound semiconductor substrate in accordance with claim 1, wherein said heat treatment is performed in an electric furnace.
Claim 6
Dependent Claim
24 words
The method of annealing a compound semiconductor substrate in accordance with claim 1, wherein said heat treatment is performed in a lamp annealing furnace.
Claim 7
Dependent Claim
26 words
The method of annealing a compound semiconductor substrate in accordance with claim 1, wherein said heat treatment is performed with the aid of heated facing surfaces.
Claim 8
Dependent Claim
25 words
The method of annealing a compound semiconductor substrate in accordance with claim 1, wherein said compound semiconductor substrate is a group III-V compound semiconductor substrate.
Claim 9
Dependent Claim
34 words
The method of annealing a compound semiconductor substrate in accordance with claim 7, wherein said group III-V compound semiconductor substrate is selected from the group consisting of GaAs, InAs, GaP, InP, GaSb and InSb.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |