US4058413A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer
Assignee: United States Department of the Air Force
•
Filing: 1976-05-13
•
Granted: 1977-11-15
•
Expires: 1996-05-13
Abstract
Abstract A method for forming tellurium N-type layers in gallium arsenide by using ion implantation as the doping process and aluminum nitride as a protective overcoat to prevent disassociation of the gallium arsenide during anneal.
Inventors
- 👤 Bryant M. Welch
- 👤 Richard D. Pashley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:56
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/206; H10P30/222; H10P30/28; H10P95/00; H10P95/90; H10P95/904; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/015; Y10S148/065; Y10S148/113
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
114 words
A process for fabricating semiconductor devices involving the implantation of tellurium as a submicron N-type layer in the surface of a gallium arsenide substrate comprising the steps of: a. preparing a cadmium doped P-type gallium arsenide substrate; b. implanting a 220 KeV ion dose of tellurium into the surface of said P-type gallium arsenide at 350° C with an incident beam at least 10° from any low-index axis; c. sputtering a coating of aluminum nitride onto said implanted surface and d. heating said coated surface to a temperature of about 900° C for about 10 minutes in flowing hydrogen to effect an anneal of said implanted surface to form a submicron N-type layer therein.
Claim 2
Dependent Claim
114 words
A process for fabricating semiconductor devices involving the implantation of tellurium as a submicron N-type layer in the surface of a gallium arsenide substrate comprising the steps of: a. preparing a cadmium doped P-type gallium arsenide substrate; b. implanting a 220 KeV ion dose of tellurium into the surface of said P-type gallium arsenide at 350° C with an incident beam at least 10° from any low-index axis; c. sputtering a coating of aluminum nitride onto said implanted surface and d. heating said coated surface to a temperature of about 900° C for about 10 minutes in flowing hydrogen to effect an anneal of said implanted surface to form a submicron N-type layer therein.
References Cited (Backward Citations)
US3352725A
Cited
US3462323A
Cited
US3600218A
Cited
US3649369A
Cited
US3717790A
Cited
US3984263A
Cited
US3880676A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-11-14 | 1981-05-16 | 1981-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-11-14 | 1985-05-16 | 1985-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-11-14 | 1989-05-16 | 1989-11-15 | $7700.00 | Window Closed / Lapsed |