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US4378255A
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Method for producing integrated semiconductor light emitter
Assignee: University of Illinois Foundation
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Filing: 1981-05-06
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Granted: 1983-03-29
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Expires: 2001-05-06
Abstract
Abstract A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.
Inventors
- 👤 Nick Holonyak, Jr.
- 👤 Wyn D. Laidig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3824; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/208; H10W; H10W10/00; H10W10/01; H01S5/20; H01S5/2054; H01S5/2059
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
69 words
A method for converting a multilayer structure comprising first active semiconductor regions interposed between second semiconductor barrier layers, to a disordered mixture of both said first and second semiconductors, said mixture exhibiting a higher energy gap than said first active semiconductor region, said regions being sufficiently thin that they exhibit quantum well effects, the method comprising: disordering said regions by the introduction of Zinc atoms into said multilayer structure.
Claim 2
Independent Claim
69 words
A method for converting a multilayer structure comprising first active semiconductor regions interposed between second semiconductor barrier layers, to a disordered mixture of both said first and second semiconductors, said mixture exhibiting a higher energy gap than said first active semiconductor region, said regions being sufficiently thin that they exhibit quantum well effects, the method comprising: disordering said regions by the introduction of Zinc atoms into said multilayer structure.
Claim 3
Dependent Claim
19 words
The method of claim 1, wherein the thickness of said first active semiconductor region is 500 Angstroms or less.
Claim 4
Dependent Claim
13 words
The method of claim 2, wherein said first active semiconducting region is GaAs.
Claim 5
Dependent Claim
13 words
The method of claim 3, wherein said second semiconductor barrier layer is AlAs.
Claim 6
Dependent Claim
17 words
The method of claim 3, wherein said second semiconductor barrier layer is Al x Ga 1-x As.
Claim 7
Dependent Claim
23 words
The method of claim 4, further including the additional step of bombarding said structure, after said Zinc introduction, with a source of protons.
Claim 8
Independent Claim
95 words
A method for integrating semiconductor devices into a monolithic structure, at least some of said devices being light emitting and including heterojunction multilayer structure, the method comprising: constructing a heterojunction light emitting semiconductor device which include multiple layers of interspersed active and barrier semiconductor regions, said active regions being 500 Angstroms or less in thickness; masking portions of said device; and introducing Zinc atoms into unmasked portions of said device at a temperature sufficient to cause said active and barrier regions to compositionally disorder to a higher energy gap material than said active semiconductor region.
Claim 9
Independent Claim
95 words
A method for integrating semiconductor devices into a monolithic structure, at least some of said devices being light emitting and including heterojunction multilayer structure, the method comprising: constructing a heterojunction light emitting semiconductor device which include multiple layers of interspersed active and barrier semiconductor regions, said active regions being 500 Angstroms or less in thickness; masking portions of said device; and introducing Zinc atoms into unmasked portions of said device at a temperature sufficient to cause said active and barrier regions to compositionally disorder to a higher energy gap material than said active semiconductor region.
Claim 10
Dependent Claim
21 words
The invention as defined in claim 7 further including the step of: bombarding said unmasked portions of said device with protons.
Claim 11
Dependent Claim
26 words
The invention as defined in claim 7 wherein said Zinc atoms are introduced at temperatures in a range below the cross diffusion temperature of said multilayers.
Claim 12
Dependent Claim
21 words
The invention as defined in claim 9 wherein said active semiconductor region is GaAs and said barrier semiconductor region is AlAs.
Claim 13
Independent Claim
81 words
A method for integrating a semiconductor device into a monolithic structure, at least some of said device including heterojunction multilayer structures, the method comprising: constructing a heterojunction semiconductor device which includes multiple layers of thin interspersed active and barrier semiconductor regions; masking portions of said device; and introducing zinc atoms into unmasked portions of said device to cause said active and barrier regions in said unmasked portions to compositionally disorder to a higher energy gap material than said active semiconductor region.
Claim 14
Independent Claim
81 words
A method for integrating a semiconductor device into a monolithic structure, at least some of said device including heterojunction multilayer structures, the method comprising: constructing a heterojunction semiconductor device which includes multiple layers of thin interspersed active and barrier semiconductor regions; masking portions of said device; and introducing zinc atoms into unmasked portions of said device to cause said active and barrier regions in said unmasked portions to compositionally disorder to a higher energy gap material than said active semiconductor region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-03-28 | 1986-09-27 | 1987-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-03-28 | 1990-09-27 | 1991-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-03-28 | 1994-09-27 | 1995-03-29 | $7700.00 | Window Closed / Lapsed |