US4138274A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing optoelectronic devices with control of light propagation by proton bombardment
Assignee: Nortel Networks Ltd
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Filing: 1978-04-26
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Granted: 1979-02-06
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Expires: 1998-04-26
Abstract
Abstract In an optoelectronic device, light is restrained from propagating in one or both confining layers on either side of an active layer by forming one or more photon absorbing barriers in one, or both, confining layers. A photon absorbing barrier can be formed by proton bombardment of a confining layer, by producing a protrusion from the substrate into the adjacent confining layer, or by producing a protrusion from a capping layer into the other confining layer, or by combinations of these. Spaced apart barriers can define a device, or sections of a multisectioned device, for example a monolithic light emitting diode and modulator.
Inventors
- 👤 John C. Dyment
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:54
CPC Classifications
H; H10; H10W; H10W10/00; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/816; H10H20/8162; H10H20/8215; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/208; H10W10/01; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
109 words
A method of producing an optoelectronic device, comprising: etching one surface of a substrate of semiconductor material to produce at least one protrusion extending normal to said surface of said substrate; forming a first confining layer on said substrate, said layer extending over said protrusion, said layer and said substrate the same conductivity type; forming an active layer on said first confining layer and a second confining layer on said active layer, said second confining layer being of opposite conductivity type as said first confining layer and said active layer being of the same conductivity type as one of said confining layers; said protrusion forming a photon absorbing barrier.
Claim 2
Independent Claim
109 words
A method of producing an optoelectronic device, comprising: etching one surface of a substrate of semiconductor material to produce at least one protrusion extending normal to said surface of said substrate; forming a first confining layer on said substrate, said layer extending over said protrusion, said layer and said substrate the same conductivity type; forming an active layer on said first confining layer and a second confining layer on said active layer, said second confining layer being of opposite conductivity type as said first confining layer and said active layer being of the same conductivity type as one of said confining layers; said protrusion forming a photon absorbing barrier.
Claim 3
Dependent Claim
60 words
A method as claimed in claim 1, including etching said second confining layer to form at least one aperture extending to said active layer; and forming a capping layer of semiconductive material on said second confining layer of the same conductivity type as said second confining layer, said capping layer extending into said aperture and forming a photon absorbing barrier.
Claim 4
Dependent Claim
18 words
A method as claimed in claim 1, including forming a plurality of spaced apart protrusions on said substrate.
Claim 5
Dependent Claim
30 words
A method as claimed in claim 1, including proton bombarding at least one region in said first confining layer to form a photon absorbing barrier in said first confining layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-05 | 1982-08-07 | 1983-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-05 | 1986-08-07 | 1987-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-05 | 1990-08-07 | 1991-02-06 | $7700.00 | Window Closed / Lapsed |