US3868281A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Luminescent device and method therefor
Assignee: International Business Machines Corp
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Filing: 1973-05-24
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Granted: 1975-02-25
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Expires: 1993-05-24
Abstract
Abstract The practice of the disclosure achieves control of the quantum efficiency of emitted recombination radiation from solid-state semiconductor luminescent devices. Generally, the quantum efficiency for conversion of recombination energy to recombination radiation is selectively increased or decreased for a luminescent device. This is accomplished by incorporating in the device a deep level impurity of one conductivity type and two shallow level impurities of opposite conductivity type. Particularly, the control involves selective doping of acceptor impurities to increase or decrease the relative proportions of radiative and nonradiative physical processes. Illustratively, the efficiency is increased at a given temperature by doping with acceptor impurity cadmium, an electroluminescent GaP diode normally doped with donor impurity oxygen and acceptor impurity zinc, and by compensating the Zn atoms which are not paired with O atoms by doping the solid with a shallow level donor, e.g., S. By doping the diode with acceptor impurities zinc anc carbon, the efficiency of emitted recombination radiation is decreased at a given temperature.
Inventors
- 👤 Thomas Nolen Morgan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:48
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
275 words
METHOD OF CONTROLLING THE EFFECIENCY OF EMITTED RECOMBINATION RADIATION FROM A LUMINESCENT DEVICE COMPRISING A SEMICONDUCTOR GAP CRYSTALLINE REGION HAVING A DEEP LEVEL DOPANT IMPURITY OXYGEN OF ONE CONDUCTIVITY TYPE IN A CONCENTRATION OF APPROXIMATELY 10**16 TO 10**17 ATOMS/CC3 AND BEING SUSCEPTIBLE OF STORING RECOMBINATION ENERGY IN ELECTRON-HOLE PAIRS, SAID DEVICE HAVING SUBSTANTIALLY ONLY ONE PREDOMINANT PEAK OF EMITTED RECOMBINATION RADIATION CORRESPONDING TO ZINCOXYGEN PAIRS OF ATOMS COMPRISING THE STEPS OF: DOPING SAID CRYSTALLINE REGION OF SAID LUMINESCENT DEVICE WITH ONE SHALLOW LEVEL DEPANT IMPURITY ZINC OF OPPOSITE CONDUCTIVITY TYPE IN A CONCENTRATION APPROXIMATELY 10 TIMES SAID CONCENTRATION OF OXYGEN FOR CONTROLLING RADIATIVE TRANSITIONS OF SAID RECOMBINATION ENERGY; DOPING SAID CRYSTALLINE REGION OF SAID LUMINESCENT DEVICE WITH ANOTHER SHALLOW LEVEL DOPANT IMPURITY OF SAID ONE CONDUCTIVITY TYPE FOR COMPENSATING SAID ONE DAPANT IMPURITY ZINC OF SAID OPPOSITE CINDUCTIVITY TYPE, SAID ANOTHER SHALLOW LEVEL DOPANET IMPURITY BEING SELECTED FROM THE GROUP CINSISTING OF SULPHUR, SELENIUM, TELLURIUM AND SILICON; DOPING SAID CRYSTALLINE SHALLOW LEVEL DOPANT IMPURITY CADMIUM OF WITH ANOTHER SHALLOW LEVEL DOPANT IMPURITY CADMIUM OF SAID OPPOSITE CONDUCTIVITY TYPE IN A CONCENTRATION APPROXIMATLY EQUAL TO SAID CONCENTRATION OF OXYGEN FOR CONTROLLING NONRADIATIVE TRANSITIONS OF SAID RECOMBINATION ENERGY; HEATING SAID CRYSTALLINE REGION TO DISASSOCIATE BOTH ZINCOXYGEN PAIRS OF ATOMS AND CADMIUM-OXYGEN PAIRS OF ATOMS IN SAID CRYSTALLINE REGION; AND ANNEALING SAID CRYSTALLINE REGION TO ENHANCE THE CONCENTRATION OF ASSOCIATED ZINC-OXYGEN PAIRS OF ATOMS CADMIUMRELATIVE TO THE CONCENTRATION OF ASSOCIATED CA ADMIUM OXYGEN PAIRS OF ATOMS THEREIN; WHEREBY SAID OUTPUT RECOMBINATION FROM SAID LUMINESCENT DEVICE HAS SAID ONE PREDOMINANT PEAK DUE TO SAID ASSOCIATED ZINC-OXYGEN PAAIRS OF ATMOS THEREIN AND HAS EFFICIENCY DUE TO ISOLATED CADMIUM ATOMS THEREIN.
Claim 2
Dependent Claim
275 words
METHOD OF CONTROLLING THE EFFECIENCY OF EMITTED RECOMBINATION RADIATION FROM A LUMINESCENT DEVICE COMPRISING A SEMICONDUCTOR GAP CRYSTALLINE REGION HAVING A DEEP LEVEL DOPANT IMPURITY OXYGEN OF ONE CONDUCTIVITY TYPE IN A CONCENTRATION OF APPROXIMATELY 10**16 TO 10**17 ATOMS/CC3 AND BEING SUSCEPTIBLE OF STORING RECOMBINATION ENERGY IN ELECTRON-HOLE PAIRS, SAID DEVICE HAVING SUBSTANTIALLY ONLY ONE PREDOMINANT PEAK OF EMITTED RECOMBINATION RADIATION CORRESPONDING TO ZINCOXYGEN PAIRS OF ATOMS COMPRISING THE STEPS OF: DOPING SAID CRYSTALLINE REGION OF SAID LUMINESCENT DEVICE WITH ONE SHALLOW LEVEL DEPANT IMPURITY ZINC OF OPPOSITE CONDUCTIVITY TYPE IN A CONCENTRATION APPROXIMATELY 10 TIMES SAID CONCENTRATION OF OXYGEN FOR CONTROLLING RADIATIVE TRANSITIONS OF SAID RECOMBINATION ENERGY; DOPING SAID CRYSTALLINE REGION OF SAID LUMINESCENT DEVICE WITH ANOTHER SHALLOW LEVEL DOPANT IMPURITY OF SAID ONE CONDUCTIVITY TYPE FOR COMPENSATING SAID ONE DAPANT IMPURITY ZINC OF SAID OPPOSITE CINDUCTIVITY TYPE, SAID ANOTHER SHALLOW LEVEL DOPANET IMPURITY BEING SELECTED FROM THE GROUP CINSISTING OF SULPHUR, SELENIUM, TELLURIUM AND SILICON; DOPING SAID CRYSTALLINE SHALLOW LEVEL DOPANT IMPURITY CADMIUM OF WITH ANOTHER SHALLOW LEVEL DOPANT IMPURITY CADMIUM OF SAID OPPOSITE CONDUCTIVITY TYPE IN A CONCENTRATION APPROXIMATLY EQUAL TO SAID CONCENTRATION OF OXYGEN FOR CONTROLLING NONRADIATIVE TRANSITIONS OF SAID RECOMBINATION ENERGY; HEATING SAID CRYSTALLINE REGION TO DISASSOCIATE BOTH ZINCOXYGEN PAIRS OF ATOMS AND CADMIUM-OXYGEN PAIRS OF ATOMS IN SAID CRYSTALLINE REGION; AND ANNEALING SAID CRYSTALLINE REGION TO ENHANCE THE CONCENTRATION OF ASSOCIATED ZINC-OXYGEN PAIRS OF ATOMS CADMIUMRELATIVE TO THE CONCENTRATION OF ASSOCIATED CA ADMIUM OXYGEN PAIRS OF ATOMS THEREIN; WHEREBY SAID OUTPUT RECOMBINATION FROM SAID LUMINESCENT DEVICE HAS SAID ONE PREDOMINANT PEAK DUE TO SAID ASSOCIATED ZINC-OXYGEN PAAIRS OF ATMOS THEREIN AND HAS EFFICIENCY DUE TO ISOLATED CADMIUM ATOMS THEREIN.
Claim 3
Dependent Claim
33 words
Method according to claim 1 wherein said heating of said device is at approximately 1,100*C for approximately 10 minutes, and said annealing of said device is at approximately 600*C for approximately 10 minutes.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-24 | 1978-08-26 | 1979-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-24 | 1982-08-26 | 1983-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-24 | 1986-08-26 | 1987-02-25 | $7700.00 | Window Closed / Lapsed |