Optoelectronic displays using uniformly spaced arrays of semi-sphere light-emitting diodes

Claim 2

A light-emitting diode assembly comprising: substrate means; a radiant semiconductor diode embedded within said substrate means, said semiconductor diode including a semispherical semiconductor body of a first conductivity type and having a substantially planar circular surface and a spherical surface merging with said planar circular surface, the spherical surface of said semispherical semiconductor body being disposed within said substrate means in embedded relationship and the planar circular surface of said semispherical semiconductor body being disposed in substantially flush co-planar relation with a corresponding surface of said substrate means; a region of a second conductivity type opposite from the first conductivity type of said semispherical semiconductor body disposed in said semispherical semiconductor body and opening onto the planar circular surface thereof, said region and said semispherical semiconductor body defining a p-n junction therebetween; a first ohmic contact engaging said semispherical semiconductor body of the first conductivity type; and a second ohmic contact engaging said region of the second conductivity type.

Claim 3

A light-emitting diode assembly as set forth in claim 1 wherein said substrate means comprises a first insulation means.

Claim 4

A light-emitting diode assembly as set forth in claim 2 wherein said substrate means further includes a second insulation means for supporting said first insulation means.

Claim 5

A light-emitting diode assembly as set forth in claim 3, wherein said first insulation means comprises a glass matrix.

Claim 6

A light-emitting diode assembly as set forth in claim 4, wherein said second insulation means comprises a glass cast film.

Claim 7

A light-emitting diode assembly as set forth in claim 1 wherein the semiconductor material of said semispherical semiconductor body of the first conductivity type comprises a p-type compound semiconductor material, and said region of the second conductivity type comprises an n-type compound semiconductor material.

Claim 8

A light-emitting diode assembly as set forth in claim 1 wherein said first and second ohmic contacts comprise conductive metal members.

Claim 9

A light-emitting diode assembly as set forth in claim 1, wherein said first ohmic contact is an annular conductive member engaging the spherical surface of said semispherical semiconductor body and encircling said semispherical semiconductor body.

Claim 10

A light-emitting diode assembly as set forth in claim 8, further including an insulation layer disposed on said substrate means and the planar circular surface of said semispherical semiconductor body, said insulating layer having an aperture therethrough in alignment with said region of the second conductivity type; and said second ohmic contact in engagement with said region of the second conductivity type being received in the aperture of said insulating layer.

Claim 11

A light-emitting diode assembly as set forth in claim 9 wherein said insulation layer comprises a glass layer.

Claim 12

A light-emitting diode display comprising: substrate means; an array of a plurality of radiant semiconductor diodes embedded within said substrate means in spaced relation with respect to each other; each of said semiconductor diodes including a semispherical semiconductor body of a first conductivity type and having a substantially planar circular surface and a spherical surface merging with said planar circular surface, the spherical surface of said semispherical semiconductor body being disposed within said substrate means in embedded relationship and the planar circular surface of said semispherical semiconductor body being disposed in substantially flush co-planar relation with a corresponding surface of said substrate means, and a region of a second conductivity type opposite from the first conductivity type of said semispherical semiconductor body disposed in said semispherical semiconductor body and opening onto the planar circular surface thereof, said region and said semispherical semiconductor body defining a p-n junction therebetween; first ohmic contact means engaging each of said semispherical semiconductor bodies of the first conductivity type for the semiconductor diodes included in said array; second ohmic contact means engaging each of said regions of the second conductivity type of said semiconductor diodes included in said array; and an insulation layer disposed on said substrate means and covering the substantially planar circular surfaces of said semispherical semiconductor bodies of the plurality of semiconductor fiodes included in said array, said insulating layer being provided with aa plurality of apertures overlying said regions of the second conductivity type; and said second ohmic contact means in engagement with said regions of the second conductivity type being received in the apertures provided in said insulating layer.

Claim 13

A light-emitting diode display comprising: substrate means; an array of a plurality of radiant semiconductor diodes embedded within said substrate means in spaced relation with respect to each other; each of said semiconductor diodes including a semispherical semiconductor body of a first conductivity type and having a substantially planar circular surface and a spherical surface merging with said planar circular surface, the spherical surface of said semispherical semiconductor body being disposed within said substrate means in embedded relationship and the planar circular surface of said semispherical semiconductor body being disposed in substantially flush co-planar relation with a corresponding surface of said substrate means, and a region of a second conductivity type opposite from the first conductivity type of said semispherical semiconductor body disposed in said semispherical semiconductor body and opening onto the planar circular surface thereof, said region and said semispherical semiconductor body defining a p-n junction therebetween; first ohmic contact means engaging each of said semispherical semiconductor bodies of the first conductivity type for the semiconductor diodes included in said array; second ohmic contact means engaging each of said regions of the second conductivity type of said semiconductor diodes included in said array; and an insulation layer disposed on said substrate means and covering the substantially planar circular surfaces of said semispherical semiconductor bodies of the plurality of semiconductor fiodes included in said array, said insulating layer being provided with aa plurality of apertures overlying said regions of the second conductivity type; and said second ohmic contact means in engagement with said regions of the second conductivity type being received in the apertures provided in said insulating layer.

Claim 14

A light-emitting diode display as set forth in claim 11, wherein said substrate means comprising a first insulation means.

Claim 15

A light-emitting diode display as set forth in claim 12 wherein said substrate means further includes second insulation means for supporting said first insulation means.

Claim 16

A light-emitting diode display as set forth in claim 11 wherein said substrate means includes a translucent glass matrix in conjunction with said array of said semiconductor diodes to form a light sheet for providing a light panel capable of having a glow over its entire surface in response to activation of said plurality of semiconductor diodes included in said array.

Claim 17

A light-emitting diode display as set forth in claim 11 wherein said array comprises groups of semiconductor diodes arranged in a seven-segment display.

Claim 18

A light-emitting diode display as set forth in claim 15 wherein each segment of said seven-segment display comprises a plurality of semiconductor diodes arranged in an array of hexagonal close packed configuration for averaging sphere-to-sphere light intensity.

Claim 19

A light-emitting diode display as set forth in claim 11, wherein the plurality of semiconductor diodes included in said array are arranged in rows and columns; said first ohmic contact means including a first plurality of conductive strips arranged in one of the rows and columns of the array, each of the first conductive strips having a plurality of spaced circular openings therethrough; said semispherical bodies of said semiconductor diodes being respectively received in the circular openings of said first conductive strips; each of said first conductive strips engaging the spherical surfaces of a plurality of semispherical bodies of the semiconductor diodes included in a single one of the rows and columns of said array; said second ohmic contact means including a second plurality of conductive strips arranged in the other of the rows and columns of the array; and each of said second conductive strips engaging the regions of the second conductivity type of a plurality of semispherical bodies of the semiconductor diodes included in a single one of the rows and columns of said array.