Patent US332820A successfully refreshed from Google Patents.
Patent US7788626B2 successfully refreshed from Google Patents.
US7788626B2
Expired / Lapsed
US
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Pattern data correction method, pattern checking method, pattern check program, photo mask producing method, and semiconductor device manufacturing method
Assignee: Kioxia Corp
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Filing: 2005-05-27
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Granted: 2010-08-31
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Expires: 2025-05-27
Abstract
Abstract A pattern data correction method is disclosed, which comprises preparing an integrated circuit pattern, setting a tolerance to the pattern that is allowable error range when the pattern is transferred on a substrate, creating a target pattern within the tolerance, and making correction for the target pattern to make a first correction pattern under a predetermined condition.
Inventors
- 👤 Shigeki Nojima
- 👤 Satoshi Tanaka
- 👤 Toshiya Kotani
- 👤 Kyoko Izuha
- 👤 Soichi Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 17:46
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; G03F7/70441; G03F1/00; G03F1/36
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
129 words
A pattern data correction method comprising: preparing by computer design pattern data including integrated circuit pattern data; setting a tolerance to a transferred pattern of the design pattern that is within an allowable error range when the design pattern is transferred on a wafer; setting a target pattern within the tolerance to the transferred pattern, wherein setting the target pattern includes: setting a margin of an exposure dose; obtaining a midpoint of the exposure dose at which a predetermined focus margin is ensured within the exposure dose margin; and obtaining an edge position of a pattern on the substrate in an exposure dose at the midpoint; and making a correction for the target pattern corresponding to the design pattern to make a first correction pattern under a predetermined condition.
Claim 2
Dependent Claim
129 words
A pattern data correction method comprising: preparing by computer design pattern data including integrated circuit pattern data; setting a tolerance to a transferred pattern of the design pattern that is within an allowable error range when the design pattern is transferred on a wafer; setting a target pattern within the tolerance to the transferred pattern, wherein setting the target pattern includes: setting a margin of an exposure dose; obtaining a midpoint of the exposure dose at which a predetermined focus margin is ensured within the exposure dose margin; and obtaining an edge position of a pattern on the substrate in an exposure dose at the midpoint; and making a correction for the target pattern corresponding to the design pattern to make a first correction pattern under a predetermined condition.
Claim 3
Dependent Claim
120 words
A pattern data correction method according to claim 1 , wherein setting the target pattern includes: obtaining an exposure dose which corresponds to a lower limit and an exposure dose which corresponds to an upper limit in the tolerance in each of two focus values; obtaining a smaller exposure dose value of the exposure doses which correspond to the lower limits in the two focus values; obtaining a larger exposure dose value of the exposure doses which correspond to the upper limits in the two focus values; setting an exposure dose included within a range of the two obtained exposure doses; and obtaining an edge position of a pattern on the substrate which is formed in the set exposure dose.
Claim 4
Dependent Claim
120 words
A pattern data correction method according to claim 1 , wherein setting the target pattern includes: obtaining an exposure dose which corresponds to a lower limit and an exposure dose which corresponds to an upper limit in the tolerance in each of two focus values; obtaining a larger exposure dose value of the exposure doses which correspond to the lower limits in the two focus values; obtaining a smaller exposure dose value of the exposure doses which correspond to the upper limits in the two focus values; setting an exposure dose included within a range of the two obtained exposure doses; and obtaining an edge position of a pattern on the substrate which is formed in the set exposure dose.
Claim 5
Dependent Claim
31 words
A pattern data correction method according to claim 1 , wherein making the first correction pattern includes selecting a correction according to a length of a side of the target pattern.
Claim 6
Dependent Claim
27 words
A pattern data correction method according to claim 1 , wherein the predetermined condition is a condition which is used when forming a pattern on the substrate.
Claim 7
Dependent Claim
27 words
A photo mask producing method for creating a photo mask with a pattern data produced by using the pattern data correction method according to claim 1 .
Claim 8
Dependent Claim
27 words
A semiconductor device manufacturing method for manufacturing a semiconductor device with a photo mask produced by using the photo mask creating method according to claim 6 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2013-08-30 | 2014-03-01 | 2014-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2017-08-30 | 2018-03-01 | 2018-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2021-08-30 | 2022-03-01 | 2022-08-31 | $7700.00 | Window Closed / Lapsed |