US6519759B2
Expired / Lapsed
US
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Photomask pattern shape correction method and corrected photomask
Assignee: NEC Electronics Corp
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Filing: 2001-04-19
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Granted: 2003-02-11
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Expires: 2021-04-19
Abstract
Abstract To provide a photomask pattern shape correction method for suitably modifying and correcting a pattern deformation caused by a optical proximity effect. A corner 1 is extracted where an exterior angle of a wiring layer pattern is an angle of 90 degrees, which is out of a diffusion layer and where the distance R from the gate is within the predetermined value Rm and the interval between the gates is equal to or more than a set value Pm. A correction figure (A) 11 is added to a side in the gate direction of this corner 1 and a correction figure (B) 12 to the side not in the gate direction, and the interval G 1 between the correction figure (B) 12 and an adjacent correction figure is calculated, and the interval G 1 calculated is checked whether it is equal to or more than the set value G 1 m. When the result of this checking satisfies “G1>G1m”, a modification procedure is not performed and when the interval G 1 is not equal to or more than the set value G 1 m, the correction figure (A) 11 and the correction figure (B) 12 are eliminated. In this way, no adverse effect of the part of the photoresist becoming tapered is produced in the gate portion and the sufficient optical proximity effect can be corrected.
Inventors
- 👤 Keiichiro Tounai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 17:47
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; G03F7/70441; G03F1/00; G03F1/36
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
94 words
A photomask pattern shape correction method for correcting a photomask pattern on corner portions of a wiring layer by a optical proximity effect, said method comprising steps of: searching said corner portions corresponding to exterior angles of said wiring layer except for any angle of approximate 180°; applying a first correction figure when a distance between said corner portion and a gate electrode is within a predetermined range of distance; and applying a second correction figure when the distance between said corner portion and said gate electrode is over the predetermined range of distance.
Claim 2
Dependent Claim
94 words
A photomask pattern shape correction method for correcting a photomask pattern on corner portions of a wiring layer by a optical proximity effect, said method comprising steps of: searching said corner portions corresponding to exterior angles of said wiring layer except for any angle of approximate 180°; applying a first correction figure when a distance between said corner portion and a gate electrode is within a predetermined range of distance; and applying a second correction figure when the distance between said corner portion and said gate electrode is over the predetermined range of distance.
Claim 3
Dependent Claim
96 words
A photomask pattern shape correction method for correcting a photomask pattern of a wiring layer in which a portion overlapping a diffusion layer forms a gate electrode, wherein; a corner portion of a pattern of said wiring layer is in a vicinity of a vertex of an exterior angle formed by the gate electrode; said method comprising steps of; determining said corner portion as apart from the gate electrode by a distance within a predetermined range, and adding a designated correction figure by applying a notch from the vicinity of a center of said corner portion.
Claim 4
Dependent Claim
96 words
A photomask pattern shape correction method for correcting a photomask pattern of a wiring layer in which a portion overlapping a diffusion layer forms a gate electrode, wherein; a corner portion of a pattern of said wiring layer is in a vicinity of a vertex of an exterior angle formed by the gate electrode; said method comprising steps of; determining said corner portion as apart from the gate electrode by a distance within a predetermined range, and adding a designated correction figure by applying a notch from the vicinity of a center of said corner portion.
Claim 5
Dependent Claim
63 words
The photomask pattern shape correction method according to claim 2 , wherein said correction figures take different sizes for a first edge in a same direction as the direction in which the gate electrode can move within the wiring layer, and for a second edge in a direction different from said direction in which the gate electrode can move within the wiring layer.
Claim 6
Dependent Claim
106 words
The photomask pattern shape correction method according to claim 2 , wherein said correction figures take different sizes for a first edge in a same direction as the direction in which the gate electrode can move within the wiring layer, and for a second edge in a direction different from said direction in which the gate electrode can move within the wiring layer; and the size of the correction figure for the first edge in the same direction as the direction in which the gate electrode can move within the wiring layer is made smaller than the size of the correction figure for the second edge.
Claim 7
Dependent Claim
70 words
The photomask pattern shape correction method according to claim 2 , further comprising steps of; forming only a correction figure for the second edge in the different direction from said direction in which the gate electrode can move within the wiring layer, and not forming a correction figure for the first edge in the same direction as said direction in which the gate electrode can move within the wiring layer.
Claim 8
Dependent Claim
131 words
A photomask pattern shape correction method for correcting a photomask pattern on corner portions of a wiring layer by a optical proximity effect, said method comprising steps of; searching said corner portions corresponding to exterior angles of said wiring layer except for any angle of approximate 180°; applying a first correction figure when a distance between said corner portion and a gate electrode is within a predetermined range of distance; applying a second correction figure when the distance between said corner portion and said gate electrode is over the predetermined range of distance; and determining whether said first and second correction figures are to be added depending on a gate width of said pattern, an interval between the gates, an interval between correction figures, and a width of the wiring pattern.
Claim 9
Dependent Claim
131 words
A photomask pattern shape correction method for correcting a photomask pattern on corner portions of a wiring layer by a optical proximity effect, said method comprising steps of; searching said corner portions corresponding to exterior angles of said wiring layer except for any angle of approximate 180°; applying a first correction figure when a distance between said corner portion and a gate electrode is within a predetermined range of distance; applying a second correction figure when the distance between said corner portion and said gate electrode is over the predetermined range of distance; and determining whether said first and second correction figures are to be added depending on a gate width of said pattern, an interval between the gates, an interval between correction figures, and a width of the wiring pattern.
Claim 10
Dependent Claim
63 words
The photomask pattern shape correction method according to claim 6 , wherein said first and second correction figures take different sizes between a edge in a same direction as the direction in which the gate electrode can move within the wiring layer, and another side in a direction different from said direction in which the gate electrode can move within the wiring layer.
Claim 11
Dependent Claim
65 words
The photomask pattern shape correction method according to claim 6 , further comprising steps of; forming only a correction figure for the edge in the different direction in which the gate electrode can move within the wiring layer, and not forming a correction figure for the edge in the same direction as said direction in which the gate electrode can move within the wiring layer.
Claim 12
Dependent Claim
133 words
A photomask pattern shape correction method for correcting a photomask pattern of a wiring layer in which a portion overlapping a diffusion layer forms a gate electrode, comprising steps of; a corner portion of a pattern of said wiring layer is in a vicinity of a vertex of an exterior angle formed by the diffusion layer; and said method comprising steps of: determining said corner portion as apart from the gate electrode by a distance within a predetermined range; adding a designated correction figure by applying a notch from the vicinity of a center of said corner portion; and determining whether said correction figure is to be added depending on a gate width of said pattern, an interval between the gates, an interval between correction figures, and a width of the wiring pattern.
Claim 13
Dependent Claim
133 words
A photomask pattern shape correction method for correcting a photomask pattern of a wiring layer in which a portion overlapping a diffusion layer forms a gate electrode, comprising steps of; a corner portion of a pattern of said wiring layer is in a vicinity of a vertex of an exterior angle formed by the diffusion layer; and said method comprising steps of: determining said corner portion as apart from the gate electrode by a distance within a predetermined range; adding a designated correction figure by applying a notch from the vicinity of a center of said corner portion; and determining whether said correction figure is to be added depending on a gate width of said pattern, an interval between the gates, an interval between correction figures, and a width of the wiring pattern.
Claim 14
Dependent Claim
62 words
The photomask pattern shape correction method according to claim 9 , wherein said correction figures take different sizes between a first edge in a same direction as the direction in which the gate electrode can move within the wiring layer, and a second edge in a direction different from said direction in which the gate electrode can move within the wiring layer.
Claim 15
Dependent Claim
112 words
The photomask pattern shape correction method according to claim 9 , wherein said correction figures take different sizes between a first edge in a same direction as the direction in which the gate electrode can move within the wiring layer, and a second edge in a direction different from said direction in which the gate electrode can move within the wiring layer; and the size of the correction figure for the first edge in the same direction as the direction in which the gate electrode can move within the wiring layer is made smaller than the size of the correction figure for the second edge in the different direction from said direction.
Claim 16
Dependent Claim
71 words
The photomask pattern shape correction method according to claim 9 , further comprising steps of; forming only a correction figure for a first edge in the different direction from said direction in which the gate electrode can move within the wiring layer, and not forming while the correction figure for a second edge in the same direction as said direction in which the gate electrode can move within the wiring layer.
Claim 17
Dependent Claim
190 words
A photomask pattern shape correction method, comprising the steps of: extracting a corner portion on a basis of at least one among three conditions including, the corner portion of a pattern of a wiring layer where exterior angles except for any angle of approximate 180° is formed exist outside a diffusion layer, the corner portion is apart from a gate electrode by a distance within a predetermined value (Rm), and an interval between gate electrodes is equal to or more than a predetermined value (Pm); adding a predetermined correction figure A to a first edge in a direction in which the gate electrode with respect to said corner portion being extracted can move within the wiring layer, and a correction figure B to a second edge in a different direction; calculating an interval G 1 between the correction figure B and an adjacent correction figure; determining whether the interval G 1 obtained at said calculating step is equal to or more than a predetermined value (G 1 m); and eliminating the correction figure A and the correction figure B when G 1 m is not greater than G 1 .
Claim 18
Dependent Claim
190 words
A photomask pattern shape correction method, comprising the steps of: extracting a corner portion on a basis of at least one among three conditions including, the corner portion of a pattern of a wiring layer where exterior angles except for any angle of approximate 180° is formed exist outside a diffusion layer, the corner portion is apart from a gate electrode by a distance within a predetermined value (Rm), and an interval between gate electrodes is equal to or more than a predetermined value (Pm); adding a predetermined correction figure A to a first edge in a direction in which the gate electrode with respect to said corner portion being extracted can move within the wiring layer, and a correction figure B to a second edge in a different direction; calculating an interval G 1 between the correction figure B and an adjacent correction figure; determining whether the interval G 1 obtained at said calculating step is equal to or more than a predetermined value (G 1 m); and eliminating the correction figure A and the correction figure B when G 1 m is not greater than G 1 .
Claim 19
Dependent Claim
176 words
A photomask pattern shape correction method, comprising steps of: extracting a corner portion on a basis of at least one among three conditions including, the corner portion of a pattern of a wiring layer where exterior angles except for any angle of approximate 180° is formed exist outside a diffusion layer, the corner portion is apart from a gate electrode by a distance within a predetermined value (Rm), and an interval between gate electrodes is equal to or more than a predetermined value (Pm); adding a predetermined correction figure A to an edge in a direction in which the gate electrode with respect to said corner portion being extracted can move within the wiring layer, and a correction figure B to another edge in a different direction; checking whether the interval G 1 between the correction figure B and an adjacent correction figure is equal to or more than a predetermined value (G 1 m); and eliminating the correction figure A and the correction figure B when G 1 m is less than G 1 .
Claim 20
Dependent Claim
176 words
A photomask pattern shape correction method, comprising steps of: extracting a corner portion on a basis of at least one among three conditions including, the corner portion of a pattern of a wiring layer where exterior angles except for any angle of approximate 180° is formed exist outside a diffusion layer, the corner portion is apart from a gate electrode by a distance within a predetermined value (Rm), and an interval between gate electrodes is equal to or more than a predetermined value (Pm); adding a predetermined correction figure A to an edge in a direction in which the gate electrode with respect to said corner portion being extracted can move within the wiring layer, and a correction figure B to another edge in a different direction; checking whether the interval G 1 between the correction figure B and an adjacent correction figure is equal to or more than a predetermined value (G 1 m); and eliminating the correction figure A and the correction figure B when G 1 m is less than G 1 .
Claim 21
Dependent Claim
15 words
A corrected photo mask wherein the photo mask is manufactured by using claim 1 .
Claim 22
Dependent Claim
15 words
A corrected photo mask wherein the photo mask is manufactured by using claim 2 .
Claim 23
Dependent Claim
15 words
A corrected photo mask wherein the photo mask is manufactured by using claim 6 .
Claim 24
Dependent Claim
15 words
A corrected photo mask wherein the photo mask is manufactured by using claim 9 .
Claim 25
Dependent Claim
15 words
A corrected photo mask wherein the photo mask is manufactured by using claim 13 .
Claim 26
Dependent Claim
15 words
A corrected photo mask wherein the photo mask is manufactured by using claim 14 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-02-10 | 2006-08-12 | 2007-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-02-10 | 2010-08-12 | 2011-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-02-10 | 2014-08-12 | 2015-02-11 | $7700.00 | Window Closed / Lapsed |