US6340542B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device, method of manufacturing a photomask, and a master mask
Assignee: Toshiba Corp
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Filing: 1999-12-06
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Granted: 2002-01-22
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Expires: 2019-12-06
Abstract
Abstract A method of manufacturing a semiconductor device, light is applied through the cell patterns made in master masks, thereby transferring the cell patterns to, and forming the cell patterns on, a wafer. On the basis of layout data representing a layout diagram of the semiconductor device, the pattern data of the device is divided along the boundaries of the function blocks of the device, generating pattern data items. Master masks are prepared in accordance with the pattern data items. Light is applied to the wafer, first through the master mask and then through the master mask. The cell patterns made in the master masks are transferred to the wafer.
Inventors
- 👤 Soichi Inoue
- 👤 Suigen Kyoh
- 👤 Iwao Higashikawa
- 👤 Ichiro Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:22
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; G03F1/00; G03F1/36
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
78 words
A method of manufacturing a semiconductor device, comprising the steps of: using a master mask having function-block patterns obtained from information representing the circuit configuration of the semiconductor device to be manufactured, and, selecting from the master mask, at least one of the function-block patterns which corresponds to a prescribed position on a wafer to be exposed to light; and transferring the selected function-block patterns sequentially to the wafer, thereby forming a desired pattern thereon by photolithography means.
Claim 2
Independent Claim
78 words
A method of manufacturing a semiconductor device, comprising the steps of: using a master mask having function-block patterns obtained from information representing the circuit configuration of the semiconductor device to be manufactured, and, selecting from the master mask, at least one of the function-block patterns which corresponds to a prescribed position on a wafer to be exposed to light; and transferring the selected function-block patterns sequentially to the wafer, thereby forming a desired pattern thereon by photolithography means.
Claim 3
Dependent Claim
75 words
A method according to claim 1 , wherein the master mask has the function-block patterns arranged in accordance with pattern data obtained on the basis of information representing the circuit configuration of the semiconductor device, the pattern data of the semiconductor device is divided along boundaries of the function blocks, thereby preparing a plurality of master masks, and the master masks are sequentially transferred to the wafer, thereby forming a desired pattern on the wafer.
Claim 4
Dependent Claim
70 words
A method according to claim 1 , wherein the master mask has function-block patterns arranged at given positions, some of the function-block patterns are selected from the master mask in accordance with pattern data obtained on the basis of information representing the circuit configuration of the semiconductor device, and the selected function-block patterns are sequentially transferred to predetermined positions on the wafer, thereby forming a desired pattern on the wafer.
Claim 5
Dependent Claim
82 words
A method according to claim 1 , wherein the master mask has function-block patterns arranged at given positions and spaced apart from one another, some of the function-block patterns are selected in accordance with pattern data obtained on the basis of information representing the circuit configuration of the semiconductor device, and the selected function-block patterns are sequentially transferred so that the function-block patterns are spaced a predetermined distance from one another on the wafer, thereby forming a desired pattern on the wafer.
Claim 6
Dependent Claim
25 words
A method according to claim 4 , wherein the predetermined distance is set so that the desired pattern is free of influence from proximity effects.
Claim 7
Independent Claim
86 words
A method of manufacturing a photomask configured to transfer a desired pattern by photolithography, said method comprising the steps of: using a master mask having function-block patterns obtained from information representing the circuit configuration of the semiconductor device to be manufactured, and selecting, from the master mask, at least one of the function-block patterns which corresponds to a prescribed position on the photomask to be exposed to light; and transferring the selected function-block sequentially to the photomask, thereby forming a desired pattern thereon by photolithography means.
Claim 8
Independent Claim
86 words
A method of manufacturing a photomask configured to transfer a desired pattern by photolithography, said method comprising the steps of: using a master mask having function-block patterns obtained from information representing the circuit configuration of the semiconductor device to be manufactured, and selecting, from the master mask, at least one of the function-block patterns which corresponds to a prescribed position on the photomask to be exposed to light; and transferring the selected function-block sequentially to the photomask, thereby forming a desired pattern thereon by photolithography means.
Claim 9
Dependent Claim
75 words
A method according to claim 6 , wherein the master mask has the function-block patterns arranged in accordance with pattern data obtained on the basis of information representing the circuit configuration of the semiconductor device, the pattern data of the semiconductor device is divided along boundaries of the function blocks, thereby preparing a plurality of master masks, and the master masks are sequentially transferred to the photomask, thereby forming a desired pattern on the photomask.
Claim 10
Dependent Claim
71 words
A method according to claim 6 , wherein the master mask has function-block patterns arranged at given positions, some of the function block patterns are selected from the master mask in accordance with pattern data obtained on the basis of information representing the circuit configuration of the semiconductor device, and the selected function-block patterns are sequentially transferred to predetermined positions on the photomask, thereby forming a desired pattern on the photomask.
Claim 11
Dependent Claim
79 words
A method according to claim 6 , wherein the master mask has function-block patterns arranged at given positions and spaced apart from one another, some of the function-block patterns are selected in accordance with pattern data obtained on the basis of information representing the circuit configuration of the semiconductor device, and the selected function-block patterns are sequentially transferred so that the function-block patterns are spaced a predetermined distance from one another, thereby forming a desired pattern on the photomask.
Claim 12
Dependent Claim
25 words
A method according to claim 9 , wherein the predetermined distance is set so that the desired pattern is free of influence from proximity effects.
Claim 13
Dependent Claim
59 words
A method according to claim 9 , wherein the predetermined distance, S, is given by the following equation: S=M×L where M is a magnification of the pattern on the photomask and L is an area on the wafer, which is influenced by proximity effects and in which a desired pattern is to be transferred from the photomask by photolithography.
Claim 14
Dependent Claim
29 words
A master mask designed to transfer a pattern by photolithography means and having function-block patterns obtained from information representing the circuit configuration of the semiconductor device to be manufactured.
Claim 15
Dependent Claim
29 words
A master mask designed to transfer a pattern by photolithography means and having function-block patterns obtained from information representing the circuit configuration of the semiconductor device to be manufactured.
Claim 16
Dependent Claim
56 words
A master mask according to claim 12 , wherein the function-block patterns are arranged in accordance with pattern data obtained on the basis of information representing the circuit configuration of the semiconductor device, and the pattern is divided along boundaries of the function blocks, thereby a part of the pattern data of the semiconductor device generated.
Claim 17
Dependent Claim
23 words
A master mask according to claim 12 , wherein the function-block patterns correspond to different function blocks and are arranged at given positions.
Claim 18
Dependent Claim
32 words
A master mask according to claim 9 , wherein the function-block patterns correspond to different function units of the semiconductor device, are arranged at given positions, and spaced apart from one another.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-01-21 | 2005-07-23 | 2006-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-01-21 | 2009-07-23 | 2010-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-01-21 | 2013-07-23 | 2014-01-22 | $7700.00 | Window Closed / Lapsed |