US7788626B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pattern data correction method, pattern checking method, pattern check program, photo mask producing method, and semiconductor device manufacturing method
Assignee: Kioxia Corp
•
Filing: 2005-05-27
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Granted: 2010-08-31
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Expires: 2025-05-27
Abstract
Abstract A pattern data correction method is disclosed, which comprises preparing an integrated circuit pattern, setting a tolerance to the pattern that is allowable error range when the pattern is transferred on a substrate, creating a target pattern within the tolerance, and making correction for the target pattern to make a first correction pattern under a predetermined condition.
Inventors
- 👤 Shigeki Nojima
- 👤 Satoshi Tanaka
- 👤 Toshiya Kotani
- 👤 Kyoko Izuha
- 👤 Soichi Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 17:35
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; G03F7/70441; G03F1/00; G03F1/36
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
129 words
A pattern data correction method comprising: preparing by computer design pattern data including integrated circuit pattern data; setting a tolerance to a transferred pattern of the design pattern that is within an allowable error range when the design pattern is transferred on a wafer; setting a target pattern within the tolerance to the transferred pattern, wherein setting the target pattern includes: setting a margin of an exposure dose; obtaining a midpoint of the exposure dose at which a predetermined focus margin is ensured within the exposure dose margin; and obtaining an edge position of a pattern on the substrate in an exposure dose at the midpoint; and making a correction for the target pattern corresponding to the design pattern to make a first correction pattern under a predetermined condition.
Claim 2
Dependent Claim
129 words
A pattern data correction method comprising: preparing by computer design pattern data including integrated circuit pattern data; setting a tolerance to a transferred pattern of the design pattern that is within an allowable error range when the design pattern is transferred on a wafer; setting a target pattern within the tolerance to the transferred pattern, wherein setting the target pattern includes: setting a margin of an exposure dose; obtaining a midpoint of the exposure dose at which a predetermined focus margin is ensured within the exposure dose margin; and obtaining an edge position of a pattern on the substrate in an exposure dose at the midpoint; and making a correction for the target pattern corresponding to the design pattern to make a first correction pattern under a predetermined condition.
Claim 3
Dependent Claim
120 words
A pattern data correction method according to claim 1 , wherein setting the target pattern includes: obtaining an exposure dose which corresponds to a lower limit and an exposure dose which corresponds to an upper limit in the tolerance in each of two focus values; obtaining a smaller exposure dose value of the exposure doses which correspond to the lower limits in the two focus values; obtaining a larger exposure dose value of the exposure doses which correspond to the upper limits in the two focus values; setting an exposure dose included within a range of the two obtained exposure doses; and obtaining an edge position of a pattern on the substrate which is formed in the set exposure dose.
Claim 4
Dependent Claim
120 words
A pattern data correction method according to claim 1 , wherein setting the target pattern includes: obtaining an exposure dose which corresponds to a lower limit and an exposure dose which corresponds to an upper limit in the tolerance in each of two focus values; obtaining a larger exposure dose value of the exposure doses which correspond to the lower limits in the two focus values; obtaining a smaller exposure dose value of the exposure doses which correspond to the upper limits in the two focus values; setting an exposure dose included within a range of the two obtained exposure doses; and obtaining an edge position of a pattern on the substrate which is formed in the set exposure dose.
Claim 5
Dependent Claim
31 words
A pattern data correction method according to claim 1 , wherein making the first correction pattern includes selecting a correction according to a length of a side of the target pattern.
Claim 6
Dependent Claim
27 words
A pattern data correction method according to claim 1 , wherein the predetermined condition is a condition which is used when forming a pattern on the substrate.
Claim 7
Dependent Claim
27 words
A photo mask producing method for creating a photo mask with a pattern data produced by using the pattern data correction method according to claim 1 .
Claim 8
Dependent Claim
27 words
A semiconductor device manufacturing method for manufacturing a semiconductor device with a photo mask produced by using the photo mask creating method according to claim 6 .
References Cited (Backward Citations)
US6154563A
Cited
JPH09319067A
Cited
US6245466B1
Cited
JP2001013668A
Cited
US6576377B2
Cited
US6519759B2
Cited
JP2002131882A
Cited
US6553559B2
Cited
US20020188925A1
Cited
US6656646B2
Cited
US7287240B2
Cited
US6749972B2
Cited
US7067221B2
Cited
US20040081898A1
Cited
US7264905B2
Cited
US20040151992A1
Cited
US6978438B1
Cited
US20050235245A1
Cited
US7266801B2
Cited
US20050229148A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2013-08-30 | 2014-03-01 | 2014-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2017-08-30 | 2018-03-01 | 2018-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2021-08-30 | 2022-03-01 | 2022-08-31 | $7700.00 | Window Closed / Lapsed |