US7608515B2
Expired / Lapsed
US
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Diffusion layer for stressed semiconductor devices
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 2006-02-14
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Granted: 2009-10-27
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Expires: 2026-02-14
Abstract
Abstract A diffusion layer for semiconductor devices is provided. In accordance with embodiments of the present invention, a semiconductor device, such as a transistor, comprises doped regions surrounded by a diffusion barrier. The diffusion barrier may be formed by recessing regions of the substrate and implanting fluorine or carbon ions. A silicon layer may be epitaxially grown over the diffusion barrier in the recessed regions. Thereafter, the recessed regions may be filled and doped with a semiconductor or semiconductor alloy material. In an embodiment, a semiconductor alloy material, such as silicon carbon, is selected to induce a tensile stress in the channel region for an NMOS device, and a semiconductor alloy material, such as silicon germanium, is selected to induce a compressive stress in the channel region for a PMOS device.
Inventors
- 👤 Hao-Yu Chen
- 👤 Shui-Ming Cheng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:02
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0275; H10D30/60; H10D30/791; H10D30/797; H10D62/00; H10D62/01; H10D62/021; H10P30/208; H10D62/80; H10D62/82; H10D62/822; H10D64/00; H10D64/01; H10D64/021
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
63 words
A method of forming a semiconductor device, the method comprising: forming a gate electrode on a substrate; forming sacrificial spacers along opposing sidewalls of the gate electrode; forming recesses in the substrate on opposing sides of the gate electrode, the recesses extending under the sacrificial spacers; forming a diffusion barrier in the recesses of the substrate; and forming source/drain regions in the recesses.
Claim 2
Independent Claim
63 words
A method of forming a semiconductor device, the method comprising: forming a gate electrode on a substrate; forming sacrificial spacers along opposing sidewalls of the gate electrode; forming recesses in the substrate on opposing sides of the gate electrode, the recesses extending under the sacrificial spacers; forming a diffusion barrier in the recesses of the substrate; and forming source/drain regions in the recesses.
Claim 3
Dependent Claim
19 words
The method of claim 1 , further comprising forming spacers adjacent the gate electrode prior to the forming recesses.
Claim 4
Dependent Claim
17 words
The method of claim 2 , wherein the spacers have a width greater than about 30 nm.
Claim 5
Dependent Claim
17 words
The method of claim 1 , wherein the recesses have a depth greater than about 50 nm.
Claim 6
Dependent Claim
17 words
The method of claim 1 , wherein the recesses have a width greater than about 10 nm.
Claim 7
Dependent Claim
36 words
The method of claim 1 , wherein the forming the diffusion barrier includes forming a fluorine-rich silicon layer, a carbon-rich silicon layer, a nitrogen-rich silicon layer, or a combination thereof in the substrate in the recesses.
Claim 8
Dependent Claim
22 words
The method of claim 6 , wherein the fluorine-rich silicon layer has a thickness from about 1 nm to about 10 nm.
Claim 9
Dependent Claim
30 words
The method of claim 1 , wherein the forming the source/drain regions comprises epitaxially growing a silicon layer in the recesses and depositing a semiconductor alloy on the silicon layer.
Claim 10
Independent Claim
71 words
A method of forming a semiconductor device, the method comprising: forming a gate electrode on a substrate; recessing source/drain regions of the gate electrode; forming a barrier layer in the substrate in the source/drain regions; forming a first semiconductor layer in the source/drain regions; forming a semiconductor alloy layer on the first semiconductor layer; and annealing after the forming the first semiconductor layer and before the forming the semiconductor alloy layer.
Claim 11
Independent Claim
71 words
A method of forming a semiconductor device, the method comprising: forming a gate electrode on a substrate; recessing source/drain regions of the gate electrode; forming a barrier layer in the substrate in the source/drain regions; forming a first semiconductor layer in the source/drain regions; forming a semiconductor alloy layer on the first semiconductor layer; and annealing after the forming the first semiconductor layer and before the forming the semiconductor alloy layer.
Claim 12
Dependent Claim
21 words
The method of claim 9 , further comprising forming spacers adjacent the gate electrode prior to the recessing the source/drain regions.
Claim 13
Dependent Claim
17 words
The method of claim 10 , wherein the spacers have a width greater than about 30 nm.
Claim 14
Dependent Claim
25 words
The method of claim 9 , wherein the recessing comprises recessing the substrate in the source/drain regions for a depth greater than about 50 nm.
Claim 15
Dependent Claim
24 words
The method of claim 9 , wherein the recessing comprises recessing the substrate in the source/drain regions a width greater than about 10 nm.
Claim 16
Dependent Claim
30 words
The method of claim 9 , wherein the forming the barrier layer includes implanting fluorine ions, carbon ions, nitrogen ions, or a combination thereof in the substrate in the recesses.
Claim 17
Dependent Claim
21 words
The method of claim 9 , wherein the barrier layer has a thickness from about 1 nm to about 10 nm.
Claim 18
Dependent Claim
19 words
The method of claim 9 , wherein the forming the first semiconductor layer comprises epitaxially growing a silicon layer.
Claim 19
Independent Claim
97 words
A method of forming a semiconductor device, the method comprising: providing a substrate; forming a gate electrode on the substrate; forming dummy spacers along opposing sides of the gate electrode; recessing the substrate adjacent the dummy spacers, thereby forming recessed regions; forming a barrier layer in the recessed regions of the substrate; forming a first semiconductor layer in the recessed regions; forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a different lattice structure than the first semiconductor layer; and removing the dummy spacers after the forming the second semiconductor layer.
Claim 20
Independent Claim
97 words
A method of forming a semiconductor device, the method comprising: providing a substrate; forming a gate electrode on the substrate; forming dummy spacers along opposing sides of the gate electrode; recessing the substrate adjacent the dummy spacers, thereby forming recessed regions; forming a barrier layer in the recessed regions of the substrate; forming a first semiconductor layer in the recessed regions; forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a different lattice structure than the first semiconductor layer; and removing the dummy spacers after the forming the second semiconductor layer.
Claim 21
Dependent Claim
31 words
The method of claim 17 , wherein the forming the barrier layer comprises implanting fluorine ions, carbon ions, nitrogen ions, or a combination thereof in the recessed regions of the substrate.
Claim 22
Dependent Claim
19 words
The method of claim 17 , wherein the forming the first semiconductor layer comprises epitaxially growing a silicon layer.
Claim 23
Dependent Claim
21 words
The method of claim 17 , wherein the forming the second semiconductor layer comprises depositing silicon-germanium, silicon carbon, or silicon-carbon germanium.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2012-10-26 | 2013-04-27 | 2013-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2016-10-26 | 2017-04-27 | 2017-10-27 | $3760.00 | Window Closed / Lapsed |
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