US6921913B2
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Strained-channel transistor structure with lattice-mismatched zone
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 2003-03-04
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Granted: 2005-07-26
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Expires: 2023-03-04
Abstract
Abstract A strained-channel transistor structure with lattice-mismatched zone and fabrication method thereof. The transistor structure includes a substrate having a strained channel region, comprising a first semiconductor material with a first natural lattice constant, in a surface, a gate dielectric layer overlying the strained channel region, a gate electrode overlying the gate dielectric layer, and a source region and drain region oppositely adjacent to the strained channel region, with one or both of the source region and drain region comprising a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant different from the first natural lattice constant.
Inventors
- 👤 Yee-Chia Yeo
- 👤 Chun-Chieh Lin
- 👤 Wen-Chin Lee
- 👤 Chenming Hu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:05
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0275; H10D30/60; H10D30/601; H10D30/608; H10D30/791; H10D30/797; H10D62/00; H10D62/01; H10D62/021; H10D62/80; H10D62/82; H10D62/822; H10D64/01344; H10D64/01346; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/693
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
113 words
A strained-channel transistor structure with improved transport properties, comprising: a strained channel region comprising a first semiconductor material with a first natural lattice constant; a gate dielectric layer overlying the strained channel region; a gate electrode overlying the gate dielectric layer; and a source region and drain region oppositely adjacent to the strained channel region, the source region comprising a source extension region and a deep source region, the drain region comprising a drain extension region and a deep drain region, one or both of the source region and drain region comprising a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant different from the first natural lattice constant.
Claim 2
Dependent Claim
113 words
A strained-channel transistor structure with improved transport properties, comprising: a strained channel region comprising a first semiconductor material with a first natural lattice constant; a gate dielectric layer overlying the strained channel region; a gate electrode overlying the gate dielectric layer; and a source region and drain region oppositely adjacent to the strained channel region, the source region comprising a source extension region and a deep source region, the drain region comprising a drain extension region and a deep drain region, one or both of the source region and drain region comprising a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant different from the first natural lattice constant.
Claim 3
Dependent Claim
20 words
The transistor structure as claimed in claim 1 , wherein the lattice-mismatched zone is about 10 to 1000 Å thick.
Claim 4
Dependent Claim
20 words
The transistor structure as claimed in claim 1 , wherein the lattice-mismatched zone is about 300 to 1000 Å thick.
Claim 5
Dependent Claim
16 words
The transistor structure as claimed in claim 1 , wherein the first semiconductor material comprises silicon.
Claim 6
Dependent Claim
18 words
The transistor structure as claimed in claim 1 , wherein the second semiconductor material comprises silicon and germanium.
Claim 7
Dependent Claim
18 words
The transistor structure as claimed in claim 1 , wherein the second semiconductor material comprises silicon and carbon.
Claim 8
Dependent Claim
24 words
The transistor structure as claimed in claim 5 , wherein molar fraction of germanium in the second semiconductor material is about 0.1 to 0.9.
Claim 9
Dependent Claim
24 words
The transistor structure as claimed in claim 6 , wherein molar fraction of carbon in the second semiconductor material is about 0.01 to 0.04.
Claim 10
Dependent Claim
38 words
The transistor structure as claimed in claim 6 , wherein the second semiconductor material further comprises germanium whose molar fraction in the second semiconductor material is less than ten times that of carbon in the second semiconductor material.
Claim 11
Dependent Claim
23 words
The transistor structure as claimed in claim 1 , wherein the strained channel region is under a tensile strain in a source-to-drain direction.
Claim 12
Dependent Claim
18 words
The transistor structure as claimed in claim 10 , wherein the tensile strain is about 0.1% to 4%.
Claim 13
Dependent Claim
23 words
The transistor structure as claimed in claim 1 , wherein the strained channel region is under a compressive strain in a vertical direction.
Claim 14
Dependent Claim
18 words
The transistor structure as claimed in claim 11 , wherein the compressive strain is about 0.1% to 4%.
Claim 15
Dependent Claim
23 words
The transistor structure as claimed in claim 1 , wherein the strained channel region is under a compressive strain in a source-to-drain direction.
Claim 16
Dependent Claim
18 words
The transistor structure as claimed in claim 14 , wherein the compressive strain is about 0.1% to 4%.
Claim 17
Dependent Claim
23 words
The transistor structure as claimed in claim 1 , wherein the strained channel region is under a tensile strain in a vertical direction.
Claim 18
Dependent Claim
18 words
The transistor structure as claimed in claim 16 , wherein the tensile strain is about 0.1% to 4%.
Claim 19
Dependent Claim
18 words
The transistor structure as claimed in claim 1 , further comprising a cap layer on the lattice-mismatched zone.
Claim 20
Dependent Claim
18 words
The transistor structure as claimed in claim 18 , wherein the cap layer comprises the first semiconductor material.
Claim 21
Dependent Claim
24 words
The transistor structure as claimed in claim 1 , wherein the lattice-mismatched zone laterally extends into the source extension region and/or drain extension region.
Claim 22
Dependent Claim
20 words
The transistor structure as claimed in claim 1 , wherein the gate dielectric layer is silicon oxide or silicon oxynitride.
Claim 23
Dependent Claim
25 words
The transistor structure as claimed in claim 1 , wherein the gate dielectric layer is Al2O3, HfO2, ZrO2, HfON, HfSiO4, ZrSiO4, La2O3, or combinations thereof.
Claim 24
Dependent Claim
22 words
The transistor structure as claimed in claim 22 , wherein the relative permittivity of the gate dielectric layer is larger than 5.
Claim 25
Dependent Claim
21 words
The transistor structure as claimed in claim 1 , wherein the gate dielectric layer is about 3 to 100 Å thick.
Claim 26
Dependent Claim
16 words
The transistor structure as claimed in claim 1 , wherein the gate electrode comprises poly-crystalline silicon.
Claim 27
Dependent Claim
17 words
The transistor structure as claimed in claim 1 , wherein the gate electrode comprises poly-crystalline silicon germanium.
Claim 28
Dependent Claim
16 words
The transistor structure as claimed in claim 1 , wherein the gate electrode comprises a metal.
Claim 29
Dependent Claim
17 words
The transistor structure as claimed in claim 1 , wherein the gate electrode comprises a metal silicide.
Claim 30
Dependent Claim
21 words
The transistor structure as claimed in claim 1 , further comprising a conductive material on the source region and drain region.
Claim 31
Dependent Claim
16 words
The transistor structure as claimed in claim 29 , wherein the conductive material comprises a metal.
Claim 32
Dependent Claim
17 words
The transistor structure as claimed in claim 29 , wherein the conductive material comprises a metal silicide.
Claim 33
Dependent Claim
100 words
A strained-channel transistor structure with improved transport properties, comprising: a strained channel region comprising a first semiconductor material with a first natural lattice constant; a gate dielectric layer overlying the strained channel region; a gate electrode overlying the gate dielectric layer; and a source region and drain region oppositely adjacent to the strained channel region, one or both of the source region and drain region comprising a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant different from the first natural lattice constant, wherein the lattice-mismatched zone further extends beyond the source region and/or drain region.
Claim 34
Dependent Claim
100 words
A strained-channel transistor structure with improved transport properties, comprising: a strained channel region comprising a first semiconductor material with a first natural lattice constant; a gate dielectric layer overlying the strained channel region; a gate electrode overlying the gate dielectric layer; and a source region and drain region oppositely adjacent to the strained channel region, one or both of the source region and drain region comprising a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant different from the first natural lattice constant, wherein the lattice-mismatched zone further extends beyond the source region and/or drain region.
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