US6437375B1
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US
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PD-SOI substrate with suppressed floating body effect and method for its fabrication
Assignee: Micron Technology Inc
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Filing: 2000-06-05
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Granted: 2002-08-20
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Expires: 2020-06-05
Abstract
Abstract A partially-depleted Silicon-on-Insulator (SOI) substrate with minimal charge build up and suppressed floating body effect is disclosed, as well as a simple method for its fabrication. A thin Si/Ge epitaxial layer is grown between two adjacent epitaxial silicon layers of a SOI substrate, and as part of the silicon epitaxial growth. The thin Si/Ge epitaxial layer introduces misfit dislocations at the interface between the thin Si/Ge epitaxial layer and the adjacent epitaxial silicon layers, which removes undesired charge build up within the substrate.
Inventors
- 👤 Kevin L. Beaman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:54
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/201; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6748
Claims Analysis
Total Claims: 59
Claim 1
Independent Claim
60 words
A SOI structure comprising: a silicon/germanium layer formed between a first silicon layer and a second silicon layer, said silicon/germanium layer being in contact with said first and second silicon layers, said silicon/germanium layer comprising approximately 0.5 to 6% germanium; and an oxide layer formed over a semiconductor substrate, said oxide layer being in contact with said second silicon layer.
Claim 2
Dependent Claim
60 words
A SOI structure comprising: a silicon/germanium layer formed between a first silicon layer and a second silicon layer, said silicon/germanium layer being in contact with said first and second silicon layers, said silicon/germanium layer comprising approximately 0.5 to 6% germanium; and an oxide layer formed over a semiconductor substrate, said oxide layer being in contact with said second silicon layer.
Claim 3
Dependent Claim
16 words
The SOI structure of claim 1 , wherein said silicon/germanium layer is an epitaxial silicon/germanium layer.
Claim 4
Dependent Claim
18 words
The SOI structure of claim 1 , wherein said silicon/germanium layer is approximately 100 to 300 Angstroms thick.
Claim 5
Dependent Claim
16 words
The SOI structure of claim 1 , wherein said silicon/germanium layer is approximately 200 Angstroms thick.
Claim 6
Dependent Claim
15 words
The SOI structure of claim 1 , wherein said silicon/germanium layer comprises approximately 5% germanium.
Claim 7
Dependent Claim
17 words
The SOI structure of claim 1 , wherein said first silicon layer is an epitaxial silicon layer.
Claim 8
Dependent Claim
20 words
The SOI structure of claim 6 , wherein said first epitaxial silicon layer is approximately 500 to 3,000 Angstroms thick.
Claim 9
Dependent Claim
18 words
The SOI structure of claim 6 , wherein said first epitaxial silicon layer is approximately 1,500 Angstroms thick.
Claim 10
Dependent Claim
17 words
The SOI structure of claim 1 , wherein said second silicon layer is an epitaxial silicon layer.
Claim 11
Dependent Claim
20 words
The SOI structure of claim 9 , wherein said second epitaxial silicon layer is approximately 300 to 1,500 Angstroms thick.
Claim 12
Dependent Claim
18 words
The SOI structure of claim 9 , wherein said second epitaxial silicon layer is approximately 500 Angstroms thick.
Claim 13
Dependent Claim
16 words
The SOI structure of claim 1 , wherein said oxide layer is approximately 1 micron thick.
Claim 14
Dependent Claim
15 words
The SOI structure of claim 1 , wherein said semiconductor substrate is a silicon substrate.
Claim 15
Dependent Claim
15 words
The SOI structure of claim 1 , wherein said semiconductor substrate is a silicon-on-saphire substrate.
Claim 16
Dependent Claim
15 words
The SOI structure of claim 1 , wherein said semiconductor substrate is a germanium substrate.
Claim 17
Dependent Claim
15 words
The SOI structure of claim 1 , wherein said semiconductor substrate is a gallium-arsenide substrate.
Claim 18
Dependent Claim
28 words
The SOI structure of claim 1 , wherein said oxide layer is formed of a material selected from the group consisting of silicon oxides, oxynitrides, and saphire-intermediate oxides.
Claim 19
Dependent Claim
16 words
The SOI structure of claim 15 , wherein said oxide layer is formed of silicon dioxide.
Claim 20
Dependent Claim
72 words
A memory cell, comprising: a SOI substrate comprising a silicon/germanium layer formed between a first silicon layer and a second silicon layer, and an oxide layer bonded to said second silicon layer, said oxide layer being formed on a semiconductor substrate, said silicon/germanium layer comprising approximately 0.5 to 6% germanium; and a transistor including a gate fabricated on said SOI substrate and including source and drain regions fabricated adjacent to said gate.
Claim 21
Dependent Claim
72 words
A memory cell, comprising: a SOI substrate comprising a silicon/germanium layer formed between a first silicon layer and a second silicon layer, and an oxide layer bonded to said second silicon layer, said oxide layer being formed on a semiconductor substrate, said silicon/germanium layer comprising approximately 0.5 to 6% germanium; and a transistor including a gate fabricated on said SOI substrate and including source and drain regions fabricated adjacent to said gate.
Claim 22
Dependent Claim
16 words
The memory cell of claim 19 , wherein said silicon/germanium layer is an epitaxial silicon/germanium layer.
Claim 23
Dependent Claim
18 words
The memory cell of claim 19 , wherein said silicon/germanium layer is approximately 100 to 300 Angstroms thick.
Claim 24
Dependent Claim
16 words
The memory cell of claim 19 , wherein said silicon/germanium layer is approximately 200 Angstroms thick.
Claim 25
Dependent Claim
15 words
The memory cell of claim 19 , wherein said silicon/germanium layer comprises approximately 5% germanium.
Claim 26
Dependent Claim
17 words
The memory cell of claim 19 , wherein said first silicon layer is an epitaxial silicon layer.
Claim 27
Dependent Claim
20 words
The memory cell of claim 24 , wherein said first epitaxial silicon layer is approximately 500 to 3,000 Angstroms thick.
Claim 28
Dependent Claim
18 words
The memory cell of claim 24 , wherein said first epitaxial silicon layer is approximately 1,500 Angstroms thick.
Claim 29
Dependent Claim
17 words
The memory cell of claim 19 , wherein said second silicon layer is an epitaxial silicon layer.
Claim 30
Dependent Claim
20 words
The memory cell of claim 27 , wherein said second epitaxial silicon layer is approximately 300 to 1,500 Angstroms thick.
Claim 31
Dependent Claim
18 words
The memory cell of claim 27 , wherein said second epitaxial silicon layer is approximately 500 Angstroms thick.
Claim 32
Dependent Claim
16 words
The memory cell of claim 19 , wherein said oxide layer is approximately 1 micron thick.
Claim 33
Dependent Claim
28 words
The memory cell of claim 19 , wherein said oxide layer is formed of a material selected from the group consisting of silicon oxides, oxynitrides, and saphire-intermediate oxides.
Claim 34
Dependent Claim
68 words
A processor system comprising: a processor; and an integrated circuit coupled to said processor and comprising a SOI substrate, said SOI substrate comprising a silicon/germanium layer formed between a first epitaxial silicon layer and a second epitaxial silicon layer, and an oxide layer bonded to said second epitaxial silicon layer, said oxide layer being formed on a semiconductor substrate, said silicon/germanium layer comprising approximately 0.5 to 6% germanium.
Claim 35
Dependent Claim
68 words
A processor system comprising: a processor; and an integrated circuit coupled to said processor and comprising a SOI substrate, said SOI substrate comprising a silicon/germanium layer formed between a first epitaxial silicon layer and a second epitaxial silicon layer, and an oxide layer bonded to said second epitaxial silicon layer, said oxide layer being formed on a semiconductor substrate, said silicon/germanium layer comprising approximately 0.5 to 6% germanium.
Claim 36
Dependent Claim
16 words
The processor system of claim 32 , wherein said silicon/germanium layer is an epitaxially grown layer.
Claim 37
Dependent Claim
18 words
The processor system of claim 32 , wherein said silicon/germanium layer is approximately 100 to 300 Angstroms thick.
Claim 38
Dependent Claim
16 words
The processor system of claim 32 , wherein said silicon/germanium layer is approximately 200 Angstroms thick.
Claim 39
Dependent Claim
15 words
The processor system of claim 32 , wherein said silicon/germanium layer comprises approximately 5% germanium.
Claim 40
Dependent Claim
20 words
The processor system of claim 32 , wherein said first epitaxial silicon layer is approximately 500 to 3,000 Angstroms thick.
Claim 41
Dependent Claim
20 words
The processor system of claim 32 , wherein said second epitaxial silicon layer is approximately 300 to 1,500 Angstroms thick.
Claim 42
Dependent Claim
16 words
The processor system of claim 32 , wherein said oxide layer is approximately 1 micron thick.
Claim 43
Dependent Claim
15 words
The processor system of claim 32 , wherein said semiconductor substrate is a silicon substrate.
Claim 44
Dependent Claim
28 words
The processor system of claim 32 , wherein said oxide layer is formed of a material selected from the group consisting of silicon oxides, oxynitrides, and saphire-intermediate oxides.
Claim 45
Dependent Claim
15 words
The processor system of claim 32 , wherein said integrated circuit is a memory device.
Claim 46
Dependent Claim
17 words
The processor system of claim 42 , wherein said memory device is a random access memory device.
Claim 47
Dependent Claim
92 words
A SOI structure comprising: a first silicon/germanium layer formed between a first silicon layer and a second silicon layer, said first silicon/germanium layer being in contact with said first and second silicon layers, said first silicon/germanium layer comprising approximately 0.5 to 6% germanium; a second silicon/germanium layer formed between a third silicon layer and said second silicon layer, said second silicon/germanium layer being in contact with said second and third silicon layers; and an oxide layer formed over a semiconductor substrate, said oxide layer being in contact with said third silicon layer.
Claim 48
Dependent Claim
92 words
A SOI structure comprising: a first silicon/germanium layer formed between a first silicon layer and a second silicon layer, said first silicon/germanium layer being in contact with said first and second silicon layers, said first silicon/germanium layer comprising approximately 0.5 to 6% germanium; a second silicon/germanium layer formed between a third silicon layer and said second silicon layer, said second silicon/germanium layer being in contact with said second and third silicon layers; and an oxide layer formed over a semiconductor substrate, said oxide layer being in contact with said third silicon layer.
Claim 49
Dependent Claim
18 words
The SOI structure of claim 44 , wherein said first and second silicon/germanium layers are epitaxially grown layers.
Claim 50
Dependent Claim
21 words
The SOI structure of claim 44 , wherein said first and second silicon/germanium layers are approximately 100 to 300 Angstroms thick.
Claim 51
Dependent Claim
19 words
The SOI structure of claim 44 , wherein said first and second silicon/germanium layers are approximately 200 Angstroms thick.
Claim 52
Dependent Claim
18 words
The SOI structure of claim 44 , wherein said first and second silicon/germanium layers comprise approximately 5% germanium.
Claim 53
Dependent Claim
17 words
The SOI structure of claim 44 , wherein said first silicon layer is an epitaxial silicon layer.
Claim 54
Dependent Claim
19 words
The SOI structure of claim 44 , wherein said first silicon layer is approximately 500 to 3,000 Angstroms thick.
Claim 55
Dependent Claim
17 words
The SOI structure of claim 44 , wherein said second silicon layer is an epitaxial silicon layer.
Claim 56
Dependent Claim
19 words
The SOI structure of claim 44 , wherein said second silicon layer is approximately 300 to 1,500 Angstroms thick.
Claim 57
Dependent Claim
17 words
The SOI structure of claim 44 , wherein said third silicon layer is an epitaxial silicon layer.
Claim 58
Dependent Claim
19 words
The SOI structure of claim 44 , wherein said third silicon layer is approximately 300 to 1,500 Angstroms thick.
Claim 59
Dependent Claim
16 words
The SOI structure of claim 44 , wherein said oxide layer is approximately 1 micron thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-08-19 | 2006-02-18 | 2006-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-19 | 2010-02-18 | 2010-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-19 | 2014-02-18 | 2014-08-20 | $7700.00 | Window Closed / Lapsed |