US7105897B2
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Semiconductor structure and method for integrating SOI devices and bulk devices
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 2004-10-28
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Granted: 2006-09-12
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Expires: 2024-10-28
Abstract
Abstract This invention discloses a method and a semiconductor structure for integrating at least one bulk device and at least one silicon-on-insulator (SOI) device. The semiconductor structure includes a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulation layer formed on the first substrate in the SOI area; and a second substrate, on which the SOI device is formed, stacked on the insulation layer. The surface of the first substrate is not on the substantially same plane as the surface of the second substrate.
Inventors
- 👤 Hao-Yu Chen
- 👤 Fu-Liang Yang
- 👤 Hung-Wei Chen
- 👤 Ping-Kun Wu
- 👤 Chao-Hsiung Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:08
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0151; H10D84/02; H10D84/03; H10D84/038; H10D86/00; H10D86/01; H10D86/201; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/061; H10W10/10; H10W10/17; H10W10/181
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
95 words
A semiconductor structure that integrates at least one bulk device and at least one silicon-on-insulator (SOI) device, the semiconductor structure comprising: a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulation layer formed on the SOI area; a buried gate under the insulation layer in the first substrate; and a second substrate, on which the SOI device is formed, disposed on the insulation layer, wherein a surface of the first substrate is not on the substantially same plane as a surface of the second substrate.
Claim 2
Dependent Claim
95 words
A semiconductor structure that integrates at least one bulk device and at least one silicon-on-insulator (SOI) device, the semiconductor structure comprising: a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulation layer formed on the SOI area; a buried gate under the insulation layer in the first substrate; and a second substrate, on which the SOI device is formed, disposed on the insulation layer, wherein a surface of the first substrate is not on the substantially same plane as a surface of the second substrate.
Claim 3
Dependent Claim
17 words
The semiconductor structure of claim 1 wherein the insulation layer has 8 thickness smaller than 300 Angstroms.
Claim 4
Dependent Claim
28 words
The semiconductor structure of claim 1 wherein the surface of the first substrate and the surface of the second substrate have a level difference smaller than 500 Angstroms.
Claim 5
Dependent Claim
14 words
The semiconductor structure of claim 3 wherein the level difference is about 350 Angstroms.
Claim 6
Dependent Claim
17 words
The semiconductor structure of claim 1 wherein the second substrate has a thickness smaller than 200 nm.
Claim 7
Dependent Claim
23 words
The semiconductor structure of claim 1 wherein a width ratio of the SOI area to the bulk area ranges from 1:5 to 1:2.
Claim 8
Dependent Claim
14 words
The semiconductor structure of claim 1 wherein the second substrate is a strained substrate.
Claim 9
Dependent Claim
14 words
The semiconductor structure of claim 1 wherein the insulation layer is a silicon-oxide-based material.
Claim 10
Dependent Claim
21 words
The semiconductor structure of claim 1 wherein the second substrate is made of a material based on Si,Ge or SiGeC alloy.
Claim 11
Dependent Claim
24 words
The semiconductor structure of claim 1 further comprising an isolation region on the first substrate for separating the SOI area from the bulk area.
Claim 12
Dependent Claim
92 words
A semiconductor structure that integrates at least one bulk device and at least one silicon-insulator (SOI) device, the semiconductor structure comprising: a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulation layer formed on the first substrate in the SOI area; and a second substrate, on which the SOI device is formed, being stacked on the insulation layer, wherein a top surface of the first substrate and a top surface of the second substrate has a level difference smaller than 500 Angstroms.
Claim 13
Dependent Claim
92 words
A semiconductor structure that integrates at least one bulk device and at least one silicon-insulator (SOI) device, the semiconductor structure comprising: a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulation layer formed on the first substrate in the SOI area; and a second substrate, on which the SOI device is formed, being stacked on the insulation layer, wherein a top surface of the first substrate and a top surface of the second substrate has a level difference smaller than 500 Angstroms.
Claim 14
Dependent Claim
17 words
The semiconductor structure of claim 11 wherein the insulation layer has a thickness smaller than 300 Angstroms.
Claim 15
Dependent Claim
14 words
The semiconductor structure of claim 11 wherein the level difference is about 350 Angstroms.
Claim 16
Dependent Claim
17 words
The semiconductor structure of claim 11 wherein the second substrate has a thickness smaller than 200 nm.
Claim 17
Dependent Claim
22 words
The semiconductor structure of claim 11 wherein a ratio of the SOI area to the bulk area ranges from 1:5 to 1:2.
Claim 18
Dependent Claim
14 words
The semiconductor structure of claim 11 wherein the second substrate is a strained substrate.
Claim 19
Dependent Claim
14 words
The semiconductor structure of claim 11 wherein the insulation layer is a silicon-oxide-based material.
Claim 20
Dependent Claim
22 words
The semiconductor structure of claim 11 wherein the second substrate is made of a material based on Si, Ge or SiGeC alloy.
Claim 21
Dependent Claim
24 words
The semiconductor structure of claim 11 further comprising an isolation region on the first substrate for separating the SOI area from the bulk area.
Claim 22
Dependent Claim
105 words
A semiconductor structure that integrates at least one bulk device and at least one silicon-on-insulator (SOI) device, the semiconductor structure comprising: a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulating layer formed on the first substrate in the SOI) area and a buried gate disposed under the insulation layer in the first substrate; and a second substrate, on which the SOI, device is formed, being stacked on the insulation layer, wherein a top surface of the first substrate and a top surface of the second substrate has a level difference smaller than 500 Angstroms.
Claim 23
Dependent Claim
105 words
A semiconductor structure that integrates at least one bulk device and at least one silicon-on-insulator (SOI) device, the semiconductor structure comprising: a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulating layer formed on the first substrate in the SOI) area and a buried gate disposed under the insulation layer in the first substrate; and a second substrate, on which the SOI, device is formed, being stacked on the insulation layer, wherein a top surface of the first substrate and a top surface of the second substrate has a level difference smaller than 500 Angstroms.
References Cited (Backward Citations)
US6635543B2
Cited
US20050045951A1
Cited
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