Patent US6893984B2 successfully refreshed from Google Patents.
US6893984B2
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Evaporated LaA1O3 films for gate dielectrics
Assignee: Micron Technology Inc
•
Filing: 2002-02-20
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Granted: 2005-05-17
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Expires: 2022-02-20
Abstract
Abstract A gate dielectric containing LaAlO 3 and method of fabricating a gate dielectric contained LaAlO 3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO 2 . The LaAlO 3 gate dielectrics formed are thermodynamically stable such that these gate dielectrics will have minimal reactions with a silicon substrate or other structures during processing. A LaAlO 3 gate dielectric is formed by evaporating Al 2 O 3 at a given rate, evaporating La 2 O 3 at another rate, and controlling the two rates to provide an amorphous film containing LaAlO 3 on a transistor body region. The evaporation deposition of the LaAlO 3 film is performed using two electron guns to evaporate dry pellets of Al 2 O 3 and La 2 O 3 . The two rates for evaporating the materials are selectively chosen to provide a dielectric film composition having a predetermined dielectric constant ranging from the dielectric constant of an Al 2 O 3 film to the dielectric constant of a La 2 O 3 film. In addition to forming a LaAlO 3 gate dielectric for a transistor, memory devices, and information handling devices such as computers include elements having a LaAlO 3 gate electric with a thin equivalent oxide thickness.
Inventors
- 👤 Kiey Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:53
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 49
Claim 1
Independent Claim
52 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporating Al 2 O 3 at a first rate; evaporating La 2 O 3 at a second rate; and controlling the first rate and the second rate to provide a film containing LaAlO 3 on the transistor body region.
Claim 2
Independent Claim
52 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporating Al 2 O 3 at a first rate; evaporating La 2 O 3 at a second rate; and controlling the first rate and the second rate to provide a film containing LaAlO 3 on the transistor body region.
Claim 3
Dependent Claim
33 words
The method of claim 1 , wherein evaporating Al 2 O 3 and evaporating La 2 O 3 includes evaporating dry pellets of Al 2 O 3 and La 2 O 3 .
Claim 4
Dependent Claim
22 words
The method of claim 1 , wherein evaporating La 2 O 3 includes evaporating La 2 O 3 by electron beam evaporation.
Claim 5
Dependent Claim
35 words
The method of claim 1 , wherein controlling the first rate and the second rate includes controlling the first rate and the second rate to selectively provide a film composition having a predetermined dielectric constant.
Claim 6
Dependent Claim
50 words
The method of claim 4 , wherein selectively providing a film composition having a predetermined dielectric constant includes providing a film composition with a dielectric constant ranging from the dielectric constant of an Al 2 O 3 film to the dielectric constant of a La 2 O 3 , film.
Claim 7
Dependent Claim
29 words
The method of claim 1 , wherein controlling the first rate and the second rate to provide a film containing LaAlO 3 includes providing an amorphous LaAl 3 film.
Claim 8
Dependent Claim
23 words
The method of claim 1 , wherein evaporating La 2 O 3 begins substantially concurrent with beginning evaporating Al 2 O 3 .
Claim 9
Dependent Claim
48 words
The method of claim 1 , wherein evaporating Al 2 O 3 and evaporating La 2 O 3 includes depositing LaAlO 3 on the transistor body region in a base pressure lower than about 5×10 −7 Torr and in a deposition pressure lower than about 2×10 −6 Torr.
Claim 10
Dependent Claim
21 words
The method of claim 1 , further including annealing the transistor body region after providing the film containing LaAlO 3 .
Claim 11
Dependent Claim
25 words
The method of claim 9 , wherein annealing the transistor body region after providing the film containing LaAlO 3 includes annealing in N 2 .
Claim 12
Dependent Claim
21 words
The method of claim 10 , wherein annealing in N 2 includes annealing in an electric furnace at about 700° C.
Claim 13
Dependent Claim
26 words
The method of claim 10 , wherein annealing in N 2 includes annealing in RTA in the range from about 800° C. to about 900° C.
Claim 14
Independent Claim
62 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporating Al 2 O 3 at a first rate using a first electron gun; evaporating La 2 O 3 at a second rate using a second electron gun, and controlling the first rare and the second rate to provide a film containing LaAlO 3 on the transistor body region.
Claim 15
Independent Claim
62 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporating Al 2 O 3 at a first rate using a first electron gun; evaporating La 2 O 3 at a second rate using a second electron gun, and controlling the first rare and the second rate to provide a film containing LaAlO 3 on the transistor body region.
Claim 16
Dependent Claim
33 words
The method of claim 13 , wherein evaporating Al 2 O 3 and evaporating La 2 O 3 includes evaporating dry pellets of Al 2 O 3 and La 2 O 3 .
Claim 17
Dependent Claim
35 words
The method of claim 13 , wherein controlling the first rate and the second rate includes controlling the first rate and the second rate to selectively provide a film composition having a predetermined dielectric constant.
Claim 18
Dependent Claim
49 words
The method of claim 15 , wherein selectively providing a film composition having a predetermined dielectric constant includes providing a film composition with a dielectric constant ranging from the dielectric constant of an Al 2 O 3 film to the dielectric constant of a La 2 O 3 film.
Claim 19
Dependent Claim
29 words
The method of claim 13 , wherein controlling the first rate and the second rate to provide a film containing LaAlO 3 includes providing an amorphous LaAlO 3 film.
Claim 20
Dependent Claim
23 words
The method of claim 13 , wherein evaporating La 2 O 3 begins substantially concurrent with beginning evaporating Al 2 O 3 .
Claim 21
Dependent Claim
33 words
The method of claim 13 , wherein forming the gate dielectric includes growing the film containing LaAlO 3 at a growth rate in the range from about 0.5 nm/mm to about 50 nm/mm.
Claim 22
Dependent Claim
21 words
The method of claim 13 , further including annealing the transistor body region after providing the film containing LaAlO 3 .
Claim 23
Independent Claim
78 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporating Al 2 O 3 at a first rate using a first electron gun; evaporating La 2 O 3 at a second rate using a second electron gun; controlling the first rate and the second rate to provide a film containing LaAlO 3 on the transistor body region; and annealing in N 2 after providing the film containing LaAlO 3 on the transistor body region.
Claim 24
Independent Claim
78 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporating Al 2 O 3 at a first rate using a first electron gun; evaporating La 2 O 3 at a second rate using a second electron gun; controlling the first rate and the second rate to provide a film containing LaAlO 3 on the transistor body region; and annealing in N 2 after providing the film containing LaAlO 3 on the transistor body region.
Claim 25
Dependent Claim
33 words
The method of claim 21 , wherein evaporating Al 2 O 3 and evaporating La 2 O 3 includes evaporating dry pellets of Al 2 O 3 and La 2 O 3 .
Claim 26
Dependent Claim
35 words
The method of claim 21 , wherein controlling the first rate and the second rate includes controlling the first rate and the second rare to selectively provide a film composition having a predetermined dielectric constant.
Claim 27
Dependent Claim
29 words
The method of claim 21 , wherein controlling the first rate and the second rate to provide a film containing LaAlO 3 includes providing an amorphous LaAlO 3 film.
Claim 28
Dependent Claim
23 words
The method of claim 21 , wherein evaporating La 2 O 3 begins substantially concurrent with beginning evaporating Al 2 O 3 .
Claim 29
Dependent Claim
48 words
The method of claim 21 , wherein evaporating Al 2 O 3 and evaporating La 2 O 3 includes depositing LaAlO 3 on the transistor body region in a base pressure lower than about 5×10 −7 Torr and in a deposition pressure lower than about 2×10 −4 Torr.
Claim 30
Dependent Claim
21 words
The method of claim 21 , wherein annealing in N 2 includes annealing in an electric furnace at about 700° C.
Claim 31
Dependent Claim
33 words
The method of claim 21 , wherein forming the gate dielectric includes growing the film containing LaAlO 3 at a growth rate in the range from about 0.5 nm/min to about 50 nm/mm.
Claim 32
Independent Claim
72 words
A method of forming a transistor, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporating Al 2 O 3 at a first rate; evaporating La 2 O 3 at a second rate; controlling the first rate and the second rate to provide a film containing LaAlO 3 on the body region; and coupling a gate to the film containing LaAlO 3 .
Claim 33
Independent Claim
72 words
A method of forming a transistor, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporating Al 2 O 3 at a first rate; evaporating La 2 O 3 at a second rate; controlling the first rate and the second rate to provide a film containing LaAlO 3 on the body region; and coupling a gate to the film containing LaAlO 3 .
Claim 34
Dependent Claim
33 words
The method of claim 29 , wherein evaporating Al 2 O 3 and evaporating La 2 O 3 includes evaporating dry pellets of Al 2 O 3 and La 2 O 3 .
Claim 35
Dependent Claim
35 words
The method of claim 29 , wherein controlling the first rate and the second rate includes controlling the first rate and the second rate to selectively provide a film composition having a predetermined dielectric constant.
Claim 36
Dependent Claim
49 words
The method of claim 29 , wherein selectively providing a film composition having a predetermined dielectric constant includes providing a film composition with a dielectric constant ranging from the dielectric constant of an Al 2 O 3 film to the dielectric constant or a La 2 O 3 film.
Claim 37
Dependent Claim
29 words
The method of claim 29 , wherein controlling the first rate and the second rate to provide a film containing LaAlO 3 includes providing an amorphous LaAlO 3 film.
Claim 38
Dependent Claim
23 words
The method of claim 29 , wherein evaporating La 2 O 3 begins substantially concurrent with beginning evaporating Al 2 O 3 .
Claim 39
Independent Claim
139 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporating Al 2 O 3 at a first rate; evaporating La 2 O 3 at a second rate; controlling the first rate and the second rate to provide a film containing LaAlO 3 on the body region; and coupling a gate to the film containing LaAlO 3 ; forming a number of wordlines coupled to a number of the gates of the number of access transistors; forming a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 40
Independent Claim
139 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporating Al 2 O 3 at a first rate; evaporating La 2 O 3 at a second rate; controlling the first rate and the second rate to provide a film containing LaAlO 3 on the body region; and coupling a gate to the film containing LaAlO 3 ; forming a number of wordlines coupled to a number of the gates of the number of access transistors; forming a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 41
Dependent Claim
33 words
The method of claim 35 , wherein evaporating Al 2 O 3 and evaporating La 2 O 3 includes evaporating dry pellets of Al 2 O 3 and La 2 O 3 .
Claim 42
Dependent Claim
35 words
The method of claim 35 , wherein controlling the first rate and the second rate includes controlling the first rate and the second rate to selectively provide a film composition having a predetermined dielectric constant.
Claim 43
Dependent Claim
49 words
The method of claim 37 , wherein selectively providing a film composition having a predetermined dielectric constant includes providing a film composition with a dielectric constant ranging from the dielectric constant of an Al 2 O 3 film to the dielectric constant of a La 2 O 3 film.
Claim 44
Dependent Claim
33 words
The method of claim 35 , wherein forming the gate dielectric includes growing the film containing LaAlO 3 at a growth rate in the range from about 0.5 nm/mm to about 50 nm/mm.
Claim 45
Independent Claim
160 words
A method of forming an information handling system, comprising: forming a processor; forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporating Al 2 O 3 at a first rate; evaporating La 2 O 3 at a second rate; controlling the first rate and the second rate to provide a film containing LaAlO 3 on the body region; and coupling a gate to the film containing LaAlO 3 ; forming a number of wordlines coupled to a number of the gates of the number of access transistors; forming a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors; forming a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors; and forming a system bus that couples the processor to the memory array.
Claim 46
Independent Claim
160 words
A method of forming an information handling system, comprising: forming a processor; forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporating Al 2 O 3 at a first rate; evaporating La 2 O 3 at a second rate; controlling the first rate and the second rate to provide a film containing LaAlO 3 on the body region; and coupling a gate to the film containing LaAlO 3 ; forming a number of wordlines coupled to a number of the gates of the number of access transistors; forming a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors; forming a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors; and forming a system bus that couples the processor to the memory array.
Claim 47
Dependent Claim
33 words
The method of claim 40 , wherein evaporating Al 2 O 3 and evaporating La 2 O 3 includes evaporating dry pellets of Al 2 O 3 and La 2 O 3 .
Claim 48
Dependent Claim
34 words
The method of claim 40 , wherein evaporating La 2 O 3 and evaporating Al 2 O 3 includes evaporating La 2 O 3 and evaporating Al 2 O 3 by electron beam evaporation.
Claim 49
Dependent Claim
35 words
The method of claim 40 , wherein controlling the first rate and the second rate includes controlling the first rate and the second rate to selectively provide a film composition having a predetermined dielectric constant.
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