US6683011B2
Expired / Lapsed
US
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Process for forming hafnium oxide films
Assignee: University of Minnesota System
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Filing: 2001-11-14
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Granted: 2004-01-27
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Expires: 2021-11-14
Abstract
Abstract A process for forming a hafnium oxide-containing film on a substrate such as silicon that includes introducing an anhydrous hafnium nitrate-containing precursor into a reactor containing the substrate, and converting the precursor into the hafnium oxide-containing film on the substrate by chemical vapor deposition.
Inventors
- 👤 Ryan C. Smith
- 👤 Tiezhong Ma
- 👤 Stephen A. Campbell
- 👤 Wayne L. Gladfelter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69392; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P14/66; H10P14/668; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
42 words
A process for forming a film on a substrate, said process comprising introducing a precursor comprising anhydrous hafnium nitrate into a reactor containing the substrate, and converting the precursor into a film comprising hafnium oxide on the substrate by chemical vapor deposition.
Claim 2
Dependent Claim
42 words
A process for forming a film on a substrate, said process comprising introducing a precursor comprising anhydrous hafnium nitrate into a reactor containing the substrate, and converting the precursor into a film comprising hafnium oxide on the substrate by chemical vapor deposition.
Claim 3
Dependent Claim
13 words
A process according to claim 1 wherein the substrate comprises a silicon substrate.
Claim 4
Dependent Claim
19 words
A process according to claim 1 comprising introducing the precursor into the reactor in the form of a gas.
Claim 5
Dependent Claim
18 words
A process according to claim 1 comprising the precursor into the reactor in the form of a liquid.
Claim 6
Dependent Claim
21 words
A process according to claim 1 comprising forming the film at a rate ranging from about 2.5 to about 10 nm/min.
Claim 7
Dependent Claim
18 words
A process according to claim 1 further comprising introducing a carrier gas into the reactor with the precursor.
Claim 8
Dependent Claim
19 words
A process according to claim 1 further comprising introducing an additional oxygen source, into the reactor with the precursor.
Claim 9
Dependent Claim
38 words
The process of claim 7 , wherein the additional oxygen source is selected from the group consisting of oxygen (O 2 ), ozone (O 3 ), water (H 2 O) and hydrogen peroxide (H 2 O 2 ).
Claim 10
Dependent Claim
12 words
The process of claim 6 , wherein the carrier gas is nitrogen.
References Cited (Backward Citations)
US6203613B1
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2007-01-26 | 2007-07-28 | 2008-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-01-26 | 2011-07-28 | 2012-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-01-26 | 2015-07-28 | 2016-01-27 | $7700.00 | Window Closed / Lapsed |