Patent US7036092B2 successfully refreshed from Google Patents.
Patent US6693350B2 successfully refreshed from Google Patents.
US6693350B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
Assignee: Denso Corp
•
Filing: 2002-12-18
•
Granted: 2004-02-17
•
Expires: 2022-12-18
Abstract
Abstract A semiconductor device includes a first conductive member, a second conductive member, a semiconductor chip, which is located between the conductive members, a bonding member, which is located between the first conductive member and the semiconductor chip, another bonding member, which is located between the second conductive member and the semiconductor chip, a molding resin, which is located between the first and second conductive members to seal the semiconductor chip, and a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members. The bonding member anti-sticking means prevents the bonding members from sticking to the surface in the manufacturing process. As a result, the otherwise insufficient connection due to the sticking between the molding resin and the surface is improved, and the semiconductor device becomes durable in electric performance.
Inventors
- 👤 Takanori Teshima
- 👤 Yutaka Fukuda
- 👤 Yoshimi Nakase
- 👤 Kuniaki Mamitsu
- 👤 Tomoatsu Makino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:08
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H10W74/00; H10W74/10; H10W74/111; H10W74/121; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07351; H10W72/07352; H10W72/07354; H10W72/075; H10W72/30; H10W72/321; H10W72/341; H10W72/347; H10W72/381; H10W72/50; H10W72/531; H10W72/5363; H10W72/551; H10W72/851; H10W72/853; H10W72/865; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
121 words
A semiconductor device comprising: a first conductive member; a second conductive member; a semiconductor chip, which is located between the conductive members; a bonding member, which is located between the first conductive member and the semiconductor chip; another bonding member, which is located between the second conductive member and the semiconductor chip; a molding resin, which is located between the first and second conductive members to seal the semiconductor chip and bonding members; and a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members, wherein the bonding member anti-sticking means has prevented the bonding members from sticking to the surface.
Claim 2
Dependent Claim
121 words
A semiconductor device comprising: a first conductive member; a second conductive member; a semiconductor chip, which is located between the conductive members; a bonding member, which is located between the first conductive member and the semiconductor chip; another bonding member, which is located between the second conductive member and the semiconductor chip; a molding resin, which is located between the first and second conductive members to seal the semiconductor chip and bonding members; and a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members, wherein the bonding member anti-sticking means has prevented the bonding members from sticking to the surface.
Claim 3
Dependent Claim
25 words
The semiconductor device in claim 1 , wherein the first conductive member includes a coupler and wherein the surface is a part of the coupler.
Claim 4
Dependent Claim
17 words
The semiconductor device in claim 1 , wherein the bonding member anti-sticking means is a resin film.
Claim 5
Dependent Claim
16 words
The semiconductor device in claim 1 , wherein the bonding member anti-sticking means is a flange.
Claim 6
Dependent Claim
92 words
The semiconductor device in claim 1 further comprising: another semiconductor chip, which is located between the conductive members; another bonding member, which is located between the first conductive member and the another semiconductor chip; another bonding member, which is located between the second conductive member and the another semiconductor chip; and another bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the another semiconductor chip and the conductive members, wherein the semiconductor chips are electrically connected in parallel.
Claim 7
Dependent Claim
43 words
The semiconductor device in claim 5 , wherein the first conductive member includes another coupler and wherein the surface of one member selected from the group consisting of the another semiconductor chip and the conductive members is a part of the another coupler.
Claim 8
Dependent Claim
31 words
The semiconductor device in claim 5 , wherein one of the semiconductor chips is an insulated gate bipolar transistor and wherein the other of the semiconductor chips is a fly-wheel diode.
Claim 9
Dependent Claim
16 words
The semiconductor device in claim 5 , wherein one of the semiconductor chips is a MOSFET.
Claim 10
Dependent Claim
155 words
A semiconductor device comprising: a first heat radiation plate; a second heat radiation plate; a semiconductor chip, which is located between the first and second heat radiation plates; a coupler, which is located between the semiconductor chip and the first heat radiation plate; a first bonding member, which is located between the coupler and the semiconductor chip; a second bonding member, which is located between the second heat radiation plate and the semiconductor chip; a third bonding member, which is located between the coupler and the first heat radiation plate; a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and a coating, which is located on a surface of the coupler, wherein the coating has prevented the first and third bonding members from sticking to the surface by permitting the first and third bonding members to dewet the coating.
Claim 11
Dependent Claim
155 words
A semiconductor device comprising: a first heat radiation plate; a second heat radiation plate; a semiconductor chip, which is located between the first and second heat radiation plates; a coupler, which is located between the semiconductor chip and the first heat radiation plate; a first bonding member, which is located between the coupler and the semiconductor chip; a second bonding member, which is located between the second heat radiation plate and the semiconductor chip; a third bonding member, which is located between the coupler and the first heat radiation plate; a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and a coating, which is located on a surface of the coupler, wherein the coating has prevented the first and third bonding members from sticking to the surface by permitting the first and third bonding members to dewet the coating.
Claim 12
Dependent Claim
25 words
The semiconductor device in claim 9 , wherein the coating is an oxide film that includes the oxide of a material making up the coupler.
Claim 13
Dependent Claim
14 words
The semiconductor device in claim 9 , wherein the coating is a resin film.
Claim 14
Dependent Claim
27 words
The semiconductor device in claim 11 , wherein the resin film includes one resin selected the group that consists of polyimide resin, polyamide resin, and amide resin.
Claim 15
Dependent Claim
143 words
A semiconductor device comprising: a first heat radiation plate; a second heat radiation plate; a semiconductor chip, which is located between the first and second heat radiation plates; a coupler, which is located between the semiconductor chip and the first heat radiation plate; a first bonding member, which is located between the coupler and the semiconductor chip; a second bonding member, which is located between the second heat radiation plate and the semiconductor chip; a third bonding member, which is located between the coupler and the first heat radiation plate; a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and a flange, which is located on a surface of the coupler, wherein the flange has prevented the first and third bonding members from sticking to the surface.
Claim 16
Dependent Claim
143 words
A semiconductor device comprising: a first heat radiation plate; a second heat radiation plate; a semiconductor chip, which is located between the first and second heat radiation plates; a coupler, which is located between the semiconductor chip and the first heat radiation plate; a first bonding member, which is located between the coupler and the semiconductor chip; a second bonding member, which is located between the second heat radiation plate and the semiconductor chip; a third bonding member, which is located between the coupler and the first heat radiation plate; a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and a flange, which is located on a surface of the coupler, wherein the flange has prevented the first and third bonding members from sticking to the surface.
Claim 17
Dependent Claim
54 words
The semiconductor device in claim 13 further comprising a coating, which is located on a surface of the coupler and on a surface of the flange, wherein the coating has prevented the first and third bonding members from sticking to the surfaces by permitting the first and third bonding members to dewet the coating.
Claim 18
Dependent Claim
23 words
The semiconductor device in claim 14 , the coating is an oxide film that includes the oxide of a material-making up the coupler.
Claim 19
Dependent Claim
158 words
A semiconductor device comprising: a first heat radiation plate; a second heat radiation plate; a semiconductor chip, which is located between the first and second heat radiation plates; a coupler, which is located between the semiconductor chip and the first heat radiation plate; a first bonding member, which is located between the coupler and the semiconductor chip; a second bonding member, which is located between the second heat radiation plate and the semiconductor chip; a third bonding member, which is located between the coupler and the first heat radiation plate; a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and a plating layer, which is located between the coupler and one of the first and third bonding members to increase the wettability of the bonding member to the coupler, wherein no plating layer is located between the molding resin and the coupler.
Claim 20
Dependent Claim
158 words
A semiconductor device comprising: a first heat radiation plate; a second heat radiation plate; a semiconductor chip, which is located between the first and second heat radiation plates; a coupler, which is located between the semiconductor chip and the first heat radiation plate; a first bonding member, which is located between the coupler and the semiconductor chip; a second bonding member, which is located between the second heat radiation plate and the semiconductor chip; a third bonding member, which is located between the coupler and the first heat radiation plate; a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and a plating layer, which is located between the coupler and one of the first and third bonding members to increase the wettability of the bonding member to the coupler, wherein no plating layer is located between the molding resin and the coupler.
Claim 21
Dependent Claim
47 words
The semiconductor device in claim 16 further comprising a coating, which is located on a surface of the coupler, wherein the coating has prevented the first and third bonding members from sticking to the surface by permitting the first and third bonding members to dewet the coating.
Claim 22
Dependent Claim
24 words
The semiconductor device in claim 17 , the coating is an oxide film that includes the oxide of a material making up the coupler.
Claim 23
Dependent Claim
35 words
The semiconductor device in claim 16 further comprising a flange, which is located on a surface of the coupler, wherein the flange has prevented the first and third bonding members from sticking to the surface.
Claim 24
Dependent Claim
40 words
The semiconductor device in claim 17 further comprising a flange, which is located on a surface of the coupler, wherein the flange has prevented the first and third bonding members from sticking to the surface where the flange is located.
Claim 25
Dependent Claim
163 words
A semiconductor device comprising: a first heat radiation plate; a second heat radiation plate; a semiconductor chip, which is located between the first and second heat radiation plates; a coupler, which is located between the semiconductor chip and the first heat radiation plate, wherein the coupler is electrically connected to the semiconductor chip; a first bonding member, which is located between the coupler and the semiconductor chip; a second bonding member, which is located between the second heat radiation plate and the semiconductor chip; a third bonding member, which is located between the coupler and the first heat radiation plate; a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and a bonding member anti-sticking means, which is located between the molding resin and a surface of the coupler, wherein the bonding member anti-sticking means has prevented the first and third bonding members from sticking to the surface.
Claim 26
Dependent Claim
163 words
A semiconductor device comprising: a first heat radiation plate; a second heat radiation plate; a semiconductor chip, which is located between the first and second heat radiation plates; a coupler, which is located between the semiconductor chip and the first heat radiation plate, wherein the coupler is electrically connected to the semiconductor chip; a first bonding member, which is located between the coupler and the semiconductor chip; a second bonding member, which is located between the second heat radiation plate and the semiconductor chip; a third bonding member, which is located between the coupler and the first heat radiation plate; a molding resin, which is located between the first and second heat radiation plates to seal the semiconductor chip, the coupler, and the bonding members; and a bonding member anti-sticking means, which is located between the molding resin and a surface of the coupler, wherein the bonding member anti-sticking means has prevented the first and third bonding members from sticking to the surface.
Claim 27
Dependent Claim
28 words
The semiconductor device in claim 21 , wherein the bonding member anti-sticking means is an oxide film that includes the oxide of a material making up the coupler.
Claim 28
Dependent Claim
17 words
The semiconductor device in claim 21 , wherein the bonding member anti-sticking means is a resin film.
Claim 29
Dependent Claim
27 words
The semiconductor device in claim 23 , wherein the resin film includes one resin selected the group that consists of polyimide resin, polyamide resin, and amide resin.
Claim 30
Dependent Claim
22 words
The semiconductor device in claim 21 , wherein the bonding member anti-sticking means is a flange, which is located on the surface.
References Cited (Backward Citations)
US4141030A
Cited
JPS5440569A
Cited
JPS5495183A
Cited
US4470063A
Cited
US4546374A
Cited
JPS5931042A
Cited
JPS5938734A
Cited
US4538170A
Cited
GB2146174A
Cited
US4646129A
Cited
US4558345A
Cited
JPS6095947A
Cited
JPS60137042A
Cited
JPS60235430A
Cited
JPS61166051A
Cited
JPS61251043A
Cited
JPS61265849A
Cited
US5708299A
Cited
JPS6292349A
Cited
JPS62141751A
Cited
JPS62287649A
Cited
JPS6396946A
Cited
JPS63102326A
Cited
US4984061A
Cited
US4827082A
Cited
JPH01228138A
Cited
US5481137A
Cited
JPH02117157A
Cited
US5229646A
Cited
JPH0320067A
Cited
EP0450980A1
Cited
JPH0412555A
Cited
JPH0427145A
Cited
JPH04103150A
Cited
JPH04249353A
Cited
US5221851A
Cited
JPH05109919A
Cited
US5248853A
Cited
JPH05283562A
Cited
JPH06291223A
Cited
JPH07240432A
Cited
JPH06349987A
Cited
JPH0738013A
Cited
JPH0745765A
Cited
US5641997A
Cited
EP0660396A1
Cited
JPH07273276A
Cited
JPH0845874A
Cited
JPH08191145A
Cited
US5726466A
Cited
JPH09148492A
Cited
US5789820A
Cited
US5801445A
Cited
WO1998012748A1
Cited
JPH11186469A
Cited
JPH11260979A
Cited
JP2000031351A
Cited
JP2000091485A
Cited
US6072240A
Cited
US6448645B1
Cited
JP2001118961A
Cited
US20020158333A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-02-16 | 2007-08-18 | 2008-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-02-16 | 2011-08-18 | 2012-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-02-16 | 2015-08-18 | 2016-02-17 | $7700.00 | Window Closed / Lapsed |