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US5481137A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device with improved immunity to contact and conductor defects

Assignee: Mitsubishi Electric Corp
•
Filing: 1994-05-18
•
Granted: 1996-01-02
•
Expires: 2014-05-18
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Abstract

Abstract In a semiconductor device, an impurity diffused layer serving as an active region is formed in a predetermined region of the surface of a semiconductor substrate of silicon, an underlayer insulating film is formed on the semiconductor substrate for the purpose of protecting and stabilizing the surface of the semiconductor substrate, and an interconnection electrically connected to the impurity diffused layer through a contact hole and formed on an Al-Si-Sn alloy, an Al-Si-Sb alloy or alloys having Ti added to the respective alloys, so that occurrence of an alloy pit and a silicon nodule is prevented. In addition, a completed protective film is formed on the interconnection and the underlayer insulating film and an aperture in a bonding pad region is formed in a predetermined region of the completed protective film, so that the interconnection and the bonding pad are electrically connected to each other. The proportion of silicon and other materials in the alloy are controlled to simultaneously avoid alloy pit and silicon nodule defects both at the contact hole and throughout the alloy conductor.

Inventors

  • 👤 Shigeru Harada
  • 👤 Hisao Masuda
  • 👤 Reiji Tamaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 12:43
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; H10W20/45; H10W20/48

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 164 words
A semiconductor device comprising: a semiconductor layer having a predetermined element as a constituent element thereof, an impurity diffused layer formed in a predetermined region of said semiconductor layer of said semiconductor device, and an interconnection layer of an aluminum alloy film having aluminum as the major constituent and formed on at least said impurity diffused layer so as to receive and send electrical signals from and to said impurity diffused layer, said interconnection layer of the aluminum alloy film including at least one element in elemental form from a first group consisting of boron, gallium, indium, thallium, phosphorus, arsenic, antimony and bismuth, the content of at least one element defined as y, said interconnection layer of the aluminum alloy film further including silicon, the content of silicon in the interconnection layer defined as x, wherein x is selected to satisfy 0<x<0.8 wt. %, y is selected to satisfy 0.2 wt. %<y<2.0 wt. % and x+y<2.0 wt. % substantially throughout said aluminum alloy film.
Claim 2
Dependent Claim 164 words
A semiconductor device comprising: a semiconductor layer having a predetermined element as a constituent element thereof, an impurity diffused layer formed in a predetermined region of said semiconductor layer of said semiconductor device, and an interconnection layer of an aluminum alloy film having aluminum as the major constituent and formed on at least said impurity diffused layer so as to receive and send electrical signals from and to said impurity diffused layer, said interconnection layer of the aluminum alloy film including at least one element in elemental form from a first group consisting of boron, gallium, indium, thallium, phosphorus, arsenic, antimony and bismuth, the content of at least one element defined as y, said interconnection layer of the aluminum alloy film further including silicon, the content of silicon in the interconnection layer defined as x, wherein x is selected to satisfy 0<x<0.8 wt. %, y is selected to satisfy 0.2 wt. %<y<2.0 wt. % and x+y<2.0 wt. % substantially throughout said aluminum alloy film.
Claim 3
Dependent Claim 17 words
The semiconductor device according to claim 1, wherein the predetermined element of said semiconductor layer comprises silicon.
Claim 4
Dependent Claim 31 words
The semiconductor device according to claim 1, wherein said interconnection layer of the aluminum alloy film comprises at least one element from a second group consisting of titanium, vanadium and chromium.
Claim 5
Dependent Claim 29 words
The semiconductor device according to claim 3, wherein the total amount of said element of said second group is z and z is selected to satisfy 0.05≦z≦1.0 wt. %.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-01-01 1999-07-03 2000-01-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-01-01 2003-07-03 2004-01-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-01-01 2007-07-03 2008-01-02 $7700.00 Window Closed / Lapsed

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