US4899206A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1985-04-01
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Granted: 1990-02-06
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Expires: 2005-04-01
Abstract
Abstract Described is a semiconductor device comprising a metal wiring formed on a semiconductor wiring including a device or devices, wherein impurities are injected into the metal wiring by ion implantation for suppressing the whiskers that may otherwise develop during processing of the metal wiring. Shorting among the wiring layers caused by such whiskers may be suppressed and the yield rate and operational reliability of the semiconductor device may be improved.
Inventors
- 👤 Hiromi Sakurai
- 👤 Yoichi Akasaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:42
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
101 words
A semiconductor device having a metal wiring selected from the group consisting of aluminum and an aluminum alloy which is substantially free of whiskers and hillocks, said metal wiring formed on a semiconductor wafer including at least one device, wherein said metal wiring has an amorphous layer of 800 to 2000 Å, and whereby said amorphous layer containing impurities prevents the formation of whiskers and hillocks in said metal wiring, said impurities being selected from the group consisting of aluminum, argon, phosphorous, arsenic and antimony and is present in a concentration of higher than 0.5% in relationship to the metal wiring.
Claim 2
Dependent Claim
101 words
A semiconductor device having a metal wiring selected from the group consisting of aluminum and an aluminum alloy which is substantially free of whiskers and hillocks, said metal wiring formed on a semiconductor wafer including at least one device, wherein said metal wiring has an amorphous layer of 800 to 2000 Å, and whereby said amorphous layer containing impurities prevents the formation of whiskers and hillocks in said metal wiring, said impurities being selected from the group consisting of aluminum, argon, phosphorous, arsenic and antimony and is present in a concentration of higher than 0.5% in relationship to the metal wiring.
Claim 3
Dependent Claim
16 words
The semiconductor device according to claim 1 wherein the metal wiring is arranged in plural layers.
Claim 4
Dependent Claim
15 words
The semiconductor device according to claim 1 wherein the metal wiring is of higher purity.
Claim 5
Dependent Claim
30 words
The semiconductor device according to claim 1 wherein the metal wiring is high purity aluminum; and wherein an insulating layer is interposed between the metal wiring and the semiconductor wafer.
Claim 6
Dependent Claim
14 words
The semiconductor device according to claims 1 or 4 wherein the impurity is aluminum.
Claim 7
Dependent Claim
14 words
The semiconductor device according to claims 1 or 4 wherein the impurity is argon.
Claim 8
Dependent Claim
14 words
The semiconductor device according to claims 1 or 4 wherein the impurity is phosphorous.
Claim 9
Dependent Claim
14 words
The semiconductor device according to claims 1 or 4 wherein the impurity is arsenic.
Claim 10
Dependent Claim
14 words
The semiconductor device according to claims 1 or 4 wherein the impurity is antimony.
Claim 11
Dependent Claim
37 words
The semiconductor device according to claim 9 wherein the wafer is silicon, the insulating layer is SiO 2 and wherein the semiconductor device consists of a plurality of layers of said wafer, insulating layer and metal wiring.
References Cited (Backward Citations)
US3631305A
Cited
US3743894A
Cited
US3887994A
Cited
US3879804A
Cited
US4242698A
Cited
US4330343A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-05 | 1993-08-07 | 1994-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-05 | 1997-08-07 | 1998-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-05 | 2001-08-07 | 2002-02-06 | $7700.00 | Window Closed / Lapsed |