US4289602A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrochemical oxidation of amorphous silicon
Assignee: ExxonMobil Technology and Engineering Co
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Filing: 1980-05-15
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Granted: 1981-09-15
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Expires: 2000-05-15
Abstract
Abstract The invention teaches an electrochemical process for electrolysis growth of an oxide layer on hydrogenated amorphous silicon. Embodied in a photovoltaic device, the oxide layer increases the open circuit voltage of the device and enhances the longevity of the photovoltaic characteristics of the device.
Inventors
- 👤 Joseph L. Sansregret
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:36
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/18; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
118 words
A method for producing a device comprising hydrogenated amorphous silicon, comprising the steps of: etching a surface region of said silicon to provide a standard surface; anodizing said etched surface in an electrolyte comprising an anodizing anion in solution with a solvent having a dielectric constant greater than or equal to about 25 wherein an electrolysis current is maintained between a cathode electrode and the silicon layer, immersed in said electrolyte and comprising an anode electrode, for a time sufficient to electrochemically grow an oxide layer of SiOx from the surface region of the silicon layer ranging in thickness from about 10 A to about 50 A; and applying a Schottky junction forming metal to said oxide layer.
Claim 2
Independent Claim
118 words
A method for producing a device comprising hydrogenated amorphous silicon, comprising the steps of: etching a surface region of said silicon to provide a standard surface; anodizing said etched surface in an electrolyte comprising an anodizing anion in solution with a solvent having a dielectric constant greater than or equal to about 25 wherein an electrolysis current is maintained between a cathode electrode and the silicon layer, immersed in said electrolyte and comprising an anode electrode, for a time sufficient to electrochemically grow an oxide layer of SiOx from the surface region of the silicon layer ranging in thickness from about 10 A to about 50 A; and applying a Schottky junction forming metal to said oxide layer.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein said oxide comprises SiOx where x ranges from about 1 to about 2.
Claim 4
Dependent Claim
29 words
The method of claim 1 wherein said anion is selected from the group consisting of NO 3 - , OH - , salicylate, SO 4 = or combinations thereof.
Claim 5
Dependent Claim
26 words
The method of claim 3 wherein said solvent is selected from the group consisting of water, ethanol, ethylene glycol, methylacetamide, ethylene glycol monoethers or combinations thereof.
Claim 6
Dependent Claim
26 words
The method of claim 4 wherein the electrolysis current ranges from about 5 μA to about 25 μA at an anodization voltage of about 0.5 volts.
Claim 7
Dependent Claim
12 words
The method of claim 1 wherein said junction forming metal comprises palladium.
Claim 8
Dependent Claim
28 words
The method of claim 1 wherein said electrolysis current ranges from about 5 μA to about 25 μA at a voltage of 0.5 volts to about 1.0 volts.
References Cited (Backward Citations)
US3377258A
Cited
US4117506A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-14 | 1985-03-16 | 1985-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-14 | 1989-03-16 | 1989-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-14 | 1993-03-16 | 1993-09-15 | $7700.00 | Window Closed / Lapsed |