US4502207A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wiring material for semiconductor device and method for forming wiring pattern therewith
Assignee: Toshiba Corp
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Filing: 1983-12-16
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Granted: 1985-03-05
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Expires: 2003-12-16
Abstract
Abstract A wiring material of a semiconductor device, which comprises aluminum as a major component and at least a surface layer of the wiring layer is alloyed with boron and silicon. A method for forming a wiring material of a semiconductor device, which comprises the steps of: forming a wiring pattern comprising aluminum as a major component on a semiconductor element; and ion-implanting one of boron and a mixture of boron and silicon in the wiring pattern and alloying at least a surface layer of the wiring pattern to form an alloy layer containing aluminum, boron and silicon.
Inventors
- 👤 Jiro Ohshima
- 👤 Masahiro Abe
- 👤 Yutaka Koshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; H10P; H10P32/00; H10P32/30; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
85 words
A method for forming a wiring material of a semiconductor device, comprising the steps of: (i) forming a wiring pattern comprising aluminum as a major component on a semiconductor element; (ii) ion-implanting one of boron and a mixture of boron and silicon in said wiring pattern and alloying at least a surface layer of said wiring pattern to form an alloy layer containing aluminum, boron and silicon; and (iii) forming a protective film on a surface of said semiconductor substrate which includes said wiring pattern.
Claim 2
Independent Claim
85 words
A method for forming a wiring material of a semiconductor device, comprising the steps of: (i) forming a wiring pattern comprising aluminum as a major component on a semiconductor element; (ii) ion-implanting one of boron and a mixture of boron and silicon in said wiring pattern and alloying at least a surface layer of said wiring pattern to form an alloy layer containing aluminum, boron and silicon; and (iii) forming a protective film on a surface of said semiconductor substrate which includes said wiring pattern.
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein the wiring pattern in the step (i) contains 0.3 to 3% of copper in advance.
References Cited (Backward Citations)
SU313886A1
Cited
SU255579A1
Cited
US3984619A
Cited
SU650365A1
Cited
US4170469A
Cited
US4213799A
Cited
US4213800A
Cited
GB2057499A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-04 | 1988-09-03 | 1989-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-04 | 1992-09-03 | 1993-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-04 | 1996-09-03 | 1997-03-05 | $7700.00 | Window Closed / Lapsed |