EP0256557A2
Expired / Lapsed
EP
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Semiconductor device having thin film wiring layer and method of forming thin wiring layer
Assignee: Fujitsu Ltd
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Filing: 1987-08-18
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Granted: —
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Expires: 2007-08-18
Abstract
Abstract A semiconductor device comprises one or a plurality of thin film wiring layers (14;33;41;48) made of aluminium containing carbon, so as to obtain hillock-free wiring layers. A method of forming the thin film wiring layer (14;33;41;48) employs a plasma-enhanced chemical vapor deposition or a magnetron-plasma chemical vapor deposition to form the thin film wiring layer (14;33;41;48).
Inventors
- 👤 Kato Takashi
- 👤 Ito Tanashi
- 👤 Mamoru Maeda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 10:05
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; Y; Y10; Y10S; Y10S438/00; Y10S438/937
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
41 words
A semiconductor device comprising a first layer (11,13;28,29;42,43;46,47,49), characterized in that there is provided: a second layer (14;33;41;48) formed on said first layer (11,13;28,29;42,43;46,47,49), said second layer (14;33;41;48) being a thin film wiring layer made of aluminium containing at least carbon.
Claim 2
Dependent Claim
41 words
A semiconductor device comprising a first layer (11,13;28,29;42,43;46,47,49), characterized in that there is provided: a second layer (14;33;41;48) formed on said first layer (11,13;28,29;42,43;46,47,49), said second layer (14;33;41;48) being a thin film wiring layer made of aluminium containing at least carbon.
Claim 3
Dependent Claim
33 words
A semiconductor device as claimed in claim 1, characterized in that said second layer (14;33;41;48) contains 30 or less atomic percent of carbon in a state where carbon is chemically bonded to aluminium.
Claim 4
Dependent Claim
31 words
A semiconductor device as claimed in anyone of claims 1 and 2, characterized in that said first layer (11,46) is made of silicon and said second layer (14;48) further contains silicon.
Claim 5
Dependent Claim
27 words
A semiconductor device as claimed in anyone of claims 1 through 3, characterized in that said second layer (14;33;41;48) contains 2 or less atomic percent of silicon.
Claim 6
Dependent Claim
58 words
A semiconductor device as claimed in anyone of claims 1 to 4, characterized in that there are further provided a third layer (42;49) made of a metal and formed on said second layer (41;48), and a fourth layer (41;48) formed on said third layer (42;49), said fourth layer (41;48) being a thin film made of aluminium containing carbon.
Claim 7
Dependent Claim
28 words
A semiconductor device as claimed in claim 5, characterized in that said third layer (42;49) is made of a metal selected from a group including tungsten and titanium.
Claim 8
Dependent Claim
47 words
A semiconductor device as claimed in claim 5, characterized in that said third layer (42;49) is made of aluminium containing carbon, said third layer (42;49) containing an atomic percent of carbon small compared to atomic percents of carbon contained in said second (41;48) and fourth layers (41;48).
Claim 9
Dependent Claim
31 words
A semiconductor device as claimed in anyone of claims 5 to 7, characterized in that said first layer (46) is made of silicon and said second layer (48) further contains silicon.
Claim 10
Dependent Claim
38 words
A semiconductor device as claimed in anyone of claims 5 to 8, characterized in that said second layer (41;48) contains an atomic percent of carbon greater than an atomic percent of carbon contained in said fourth layer (41;48).
Claim 11
Dependent Claim
43 words
A semiconductor device as claimed in anyone of claims 5 to 9, characterized in that a plurality of said third (42) and fourth layers (41) are provided in alternate succession so that each third layer (42) is sandwiched between two fourth layers (41).
Claim 12
Dependent Claim
28 words
A semiconductor device as claimed in anyone of claims 1 to 10, characterized in that grains of said second layer (14;33;41;48) are generally oriented on the (200) plane.
Claim 13
Independent Claim
77 words
A method of forming on a first layer (11,13;28,29;42,43;46,47,49) a thin film second layer (14;33;41;48), characterized in that said method comprises the steps of: depositing aluminium containing at least carbon on said first layer (11,13;28,29;42,43;46,47,49) at a temperature less than or equal to a cohesion temperature of aluminium so as to form said second layer (14;33;41;48) and subjecting said first (11,13;28,29;42,43;46,47,49) and second (14;33;41;48) layers to a thermal process at a temperature greater than equal to 300°C.
Claim 14
Independent Claim
77 words
A method of forming on a first layer (11,13;28,29;42,43;46,47,49) a thin film second layer (14;33;41;48), characterized in that said method comprises the steps of: depositing aluminium containing at least carbon on said first layer (11,13;28,29;42,43;46,47,49) at a temperature less than or equal to a cohesion temperature of aluminium so as to form said second layer (14;33;41;48) and subjecting said first (11,13;28,29;42,43;46,47,49) and second (14;33;41;48) layers to a thermal process at a temperature greater than equal to 300°C.
Claim 15
Dependent Claim
24 words
A method as claimed in claim 12, characterized in that said step of depositing aluminium deposits aluminium containing silicon in addition to the carbon.
Claim 16
Dependent Claim
23 words
A method as claimed in claim 12 or 13, characterized in that said step of depositing aluminium employs a plasma-enhanced chemical vapor deposition.
Claim 17
Dependent Claim
24 words
A method as claimed in claim 14, characterized in that said plasma-enhanced chemical vapor deposition uses an organic metal gas as a source gas.
Claim 18
Dependent Claim
26 words
A method as claimed in claim 14, characterized in that said plasma-enhanced chemical vapor deposition uses a gas mixture of organic metal gas and silane gas.
Claim 19
Dependent Claim
20 words
A method as claimed in claim 15 or 16, characterized in that said organic metal gas is trimethyl aluminium gas.
Claim 20
Dependent Claim
34 words
A method as claimed in claim 15 or 16, characterized in that said plasma-enhanced chemical vapor deposition uses dilute hydrogen gas of a quanitity which is approximately 60 times that of said gas mixture.
Claim 21
Independent Claim
42 words
A method as claimed in anyone of claims 14 to 18, characterized in that said plasma-enhanced chemical vapor deposition is carried out with a temperature of said organic metal gas set to a temperature less than or equal to a fusing point.
Claim 22
Dependent Claim
55 words
A method as claimed in claim 12, characterized in that said step of depositing aluminium employs a magnetron-plasma chemical vapor deposition wherein a plasma-enhanced chemical vapor deposition is carried out on said first layer (11,13;28,29;42,43;46,47,49) with plasma chemical reaction confined locally on a surface of said first layer (11,13;28,29;42,43;46,47,49) by applying a magnetic field (70).
Claim 23
Dependent Claim
51 words
A method as claimed in claim 20, characterized in that a value P is set to a value which is proportional to an activation energy level at which the deposition reaction occurs and is within a predetermined range, where P is described by (magnetic field intensity) × (RF power density)/(gas pressure).
Claim 24
Dependent Claim
57 words
A method as claimed in claim 21, characterized in that said value P is set to such a value within said predetermined range that a mean free path of electrons in the plasma under no applied magnetic field is approximately the same as a Raman radius of electron in the plasma under the applied magnetic field (70).
Claim 25
Independent Claim
53 words
A method as claimed in anyone of claims 20 to 22, characterized in that the magnetic field intensity is in a range of 200 Gauss to 1500 Gauss, the RF power density is in a range of 0.5 W/cm² and the gas pressure is in a range of 1 Torr to 5 Torr.
Claim 26
Independent Claim
28 words
A method as claimed in anyone of claims 21 to 23, characterized in that said value P is in a range of 20 Gauss·W/cm²·Torr to 3000 Gauss·W/cm²· Torr.
Claim 27
Independent Claim
50 words
A method as claimed in anyone of claims 21 to 24, characterized in that the magnetic field (70) is applied over said first layer by a planar magnetron so that magnetic lines of force generated thereby are distributed in a loop above said first layer without penetrating said first layer.
References Cited (Backward Citations)
No citation records indexed.
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