Pressure contact-type semiconductor device

Abstract

Abstract PURPOSE: To reduce the distortion applied to an element when an electrode is brought into contact with the element by pressure, by interposing a powder metallic layer with a particle diameter below 2μm. CONSTITUTION: A powder layer 7 with approximately 0.5 mm thickness is generated on the capacity bottom face of base electrode 2 and case 3. Element 1 is put on layer 7 so that electrode 13b may be at the top. Insulating ring 5 is inserted to leading-out electrode 4, and plate spring 6 is inserted. After that, the pressure over three times as large as the spring force of plate spring 6 is applied to solidify layer 7; and after the plate spring is fixed by a protrusion, a device is completed by welding and connection. In this structure, since powder layer 7 becomes a pressure buffering materials and the warp of element 1 is not reformed, element 1 is prevented form being affected by the distortion to a Si substrate and cracking. The ther-mal rmal resistance and forward voltage drop are reduced. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Mitsuo Odate

Bibliographic Details