Controlled-turn-off high-power semiconductor component

Claim 2

A controlled-turn-off high-power semiconductor component for a maximum turn-off current of more than 100 A, comprising (a) a semiconductor device (12) having an active semiconductor area which is substantially greater than 1 cm 2 ; (b) a fine structure composed of a multiplicity of parallel-connected individual elements inside the semiconductor device (12); (c) the individual elements being combined in groups; wherein (d) the semiconductor device (12) is composed of a multiplicity of individual, similar and parallel-connected semiconductor chips (7); (e) the individual semiconductor chips (7) have an active area which is less than or approximately equal to 1 cm 2 and each comprise a group of individual elements; (f) the semiconductor chips (7) are accommodated on a common substrate in a common housing (13; (g) the semiconductor chip (7) population is subdivided into two subpopulations; (h) one of the two subpopulations comprises thyristor chips (7a) having an internal thyristor structure, and the other of the two subpopulations comprises diode chips (7b) having an internal diode structure; and (i) inside the semiconductor device (12) the thyristor chips (7a) and the diode chips (7b) are alternately arranged alongside one another and connected antiparallel to one another, and form a reverse-conducting thyristor.

Claim 3

The component as claimed in claim 1, wherein (a) the maximum turn-off current is greater than 1000 A; and (b) the active area is greater than 10 cm 2 .

Claim 4

The component as claimed in claim 1, wherein at least some of the semiconductor chips (7) have an internal structure of a component from the group comprising the MCTs, IGBTs, GTOs and MOSFETs.

Claim 5

The component as claimed in claim 1, wherein the common housing (13) comprises an insulating housing (4) and a disk-type cathode contact (1) and a disk-type anode contact (8), the cathode contact (1) and the anode contact (8) each being joined to the insulating housing (4) by means of flanges (2, 5) and sealing the housing (13) on both sides.

Claim 6

The component as claimed in claim 4, wherein (a) the semiconductor chips (7) are deposited on a conducting substrate (14) as the common base; (b) the semiconductor chips (7) are surrounded by a common gate plate (6) which is of insulated construction and is parallel to the substrate (14), which gate plate (6) carries the leads for controlling the semiconductor chips (7); (c) the cathode contact (1) is provided on its inner side with contact posts (3) for each of the semiconductor chips (7); and (d) the contact posts (3) press on the semiconductor chips (7) through passage holes (11) in the gate plate (6) and make contact to with the semiconductor chips.

Claim 7

The component as claimed in claim 5, wherein (a) the substrate (14) is a disk made of one of the metals Mo, Cu or of a Cu-Mo compound; (b) The semiconductor chips (7) are soldered or bonded onto the substrate (14); and (c) The gate plate (6) is constructed as a circuit board to which the semiconductor chips (7) are connected by bonding wires (9).

Claim 8

The component as claimed in claim 6, wherein the gate plate (6) additionally carries at least one component (15) which is provided to trigger or to protect the semiconductor chips (7).

Claim 9

The component as claimed in claim 4, wherein (a) the cathode contact (1) is provided on its inner side with a plurality of upper contact posts (17a); (b) the anode contact (8) is provided on its inner side with a plurality of lower contact posts (17b); and (c) every semiconductor chip (7) is arranged between an upper and a lower contact post (17a and 17b respectively).

Claim 10

A controlled-turn-off high-power semiconductor component for a maximum turn-off current of more than 100 A, comprising (a) a semiconductor device (12) having an active semiconductor area which is substantially greater than 1 cm 2 ; (b) a fine structure composed of a multiplicity of parallel-connected individual elements inside the semiconductor device (12); (c) the semiconductor device (12) being composed of a multiplicity of individual, similar and parallel-connected semiconductor chips (7), and the individual semiconductor chips (7) having an active area which is less than or approximately equal to 1 cm 2 and each comprising a group of individual elements; (d) the semiconductor chips (7) being accommodated on a common substrate in a common housing (13), and the common housing (13) comprising an insulating housing (4) and a disk-type cathode contact (1) and a disk-type anode contact (8); and (e) the cathode contact (1) and the anode contact (8) each being joined to the insulating housing (4) by means of flanges (2, 5) and sealing the housing (13) on both sides; wherein (f) the semiconductor chips (7) are deposited on a conducting substrate (14) as the common base; (g) the semiconductor chips (7) are surrounded by a common gate plate (6) which is of insulated construction and is parallel to the substrate (14) as the common base; (g) the semiconductor chips (7) are surrounded by a common gate plate (6) which is of insulated construction and is parallel to the substrate (14), which gate plate (6) carries the leads for controlling the semiconductor chips (7); (h) the cathode contact (1) is provided on its inner side with contact posts (3) for each of the semiconductor chips (7); and (i) the contact posts (3) press on the semiconductor chips (7) through passage holes (11) in the gate plate (6) and make contact to the semiconductor chips (7).

Claim 11

A controlled-turn-off high-power semiconductor component for a maximum turn-off current of more than 100 A, comprising (a) a semiconductor device (12) having an active semiconductor area which is substantially greater than 1 cm 2 ; (b) a fine structure composed of a multiplicity of parallel-connected individual elements inside the semiconductor device (12); (c) the semiconductor device (12) being composed of a multiplicity of individual, similar and parallel-connected semiconductor chips (7), and the individual semiconductor chips (7) having an active area which is less than or approximately equal to 1 cm 2 and each comprising a group of individual elements; (d) the semiconductor chips (7) being accommodated on a common substrate in a common housing (13), and the common housing (13) comprising an insulating housing (4) and a disk-type cathode contact (1) and a disk-type anode contact (8); and (e) the cathode contact (1) and the anode contact (8) each being joined to the insulating housing (4) by means of flanges (2, 5) and sealing the housing (13) on both sides; wherein (f) the semiconductor chips (7) are deposited on a conducting substrate (14) as the common base; (g) the semiconductor chips (7) are surrounded by a common gate plate (6) which is of insulated construction and is parallel to the substrate (14) as the common base; (g) the semiconductor chips (7) are surrounded by a common gate plate (6) which is of insulated construction and is parallel to the substrate (14), which gate plate (6) carries the leads for controlling the semiconductor chips (7); (h) the cathode contact (1) is provided on its inner side with contact posts (3) for each of the semiconductor chips (7); and (i) the contact posts (3) press on the semiconductor chips (7) through passage holes (11) in the gate plate (6) and make contact to the semiconductor chips (7).

Claim 12

The component as claimed in claim 9, wherein (a) the substrate (14) is a disk made of one of the metals Mo, Cu or of a Cu-Mo compound; (b) the semiconductor chips (7) are soldered or bonded onto the substrate (14); and (c) the gate plate (6) is constructed as a circuit board to which the semiconductor chips (7) are connected by bonding wires (9).

Claim 13

The component as claimed in claim 10, wherein the gate plate (6) additionally carries at least one component (15) which is provided to trigger or to protect the semiconductor chips (7).

Claim 14

The component as claimed in claim 9, wherein (a) the semiconductor chip (7) population is subdivided into two subpopulations; (b) one of the two subpopulations comprises thyristor chips (7a) having an internal thyristor structure, and the other of the two subpopulations comprises diode chips (7b) having an internal diode structure; and (c) inside the semiconductor device (12) the thyristor chips (7a) and the diode chips (7b) are alternately arranged alongside one another and connected antiparallel to one another, and form a reverse-conducting thyristor.

Claim 15

A controlled-turn-off high-power semiconductor area greater than 1 cm 2 ; the semiconductor device being composed of a multiplicity of individual, similar and parallel-connected semiconductor chips, each of the individual semiconductor chips having an active area which is less than or approximately equal to 1 cm 2 and each individual semiconductor chip comprising a group of individual elements; the semiconductor chips being accommodated on a common substrate in a common housing, and the common housing comprising an insulating housing, a disk-type cathode contact and a disk-type anode contact; the cathode contact and the anode contact each being joined to the insulating housing by means of flanges which seal the housing on both sides; each of the semiconductor chips being deposited on a conducting substrate as a common base; the semiconductor chips being surrounded by a common gate plate which is of an insulated construction and is parallel to the conducting substrate, wherein the gate plate carries leads for controlling the semiconductor chips; the cathode contact being provided on its inner side with contact posts for each of the semiconductor chips; and the contact posts pressing on the semiconductor chips through passage holes in the gate plate to make contact with the semiconductor chips.

Claim 16

A controlled-turn-off high-power semiconductor area greater than 1 cm 2 ; the semiconductor device being composed of a multiplicity of individual, similar and parallel-connected semiconductor chips, each of the individual semiconductor chips having an active area which is less than or approximately equal to 1 cm 2 and each individual semiconductor chip comprising a group of individual elements; the semiconductor chips being accommodated on a common substrate in a common housing, and the common housing comprising an insulating housing, a disk-type cathode contact and a disk-type anode contact; the cathode contact and the anode contact each being joined to the insulating housing by means of flanges which seal the housing on both sides; each of the semiconductor chips being deposited on a conducting substrate as a common base; the semiconductor chips being surrounded by a common gate plate which is of an insulated construction and is parallel to the conducting substrate, wherein the gate plate carries leads for controlling the semiconductor chips; the cathode contact being provided on its inner side with contact posts for each of the semiconductor chips; and the contact posts pressing on the semiconductor chips through passage holes in the gate plate to make contact with the semiconductor chips.

Claim 17

The semiconductor component according to claim 13, wherein: the substrate is a disk made of one of the metals Mo, Cu or of a Cu-Mo compound; the semiconductor chips are soldered or bonded onto the substrate; and the gate plate is constructed as a circuit board to which the semiconductor chips are connected by bonding wires.

Claim 18

The semiconductor component according to claim 14, wherein the gate plate further carries at least one component which is provided to trigger or to protect the semiconductor chips.

Claim 19

The semiconductor component according to claim 13, wherein: the semiconductor chips are subdivided into two subpopulations; wherein a first of the two subpopulations comprises thyristor chips having an internal thyristor structure, and a second of the two subpopulations comprises diode chips having an internal diode structure; and wherein inside the semiconductor device the thyristor chips and the diode chips are alternately arranged alongside one another and connected antiparallel to one another to form a reverse-conducting thyristor.